irf540 mosfet 100v 33a

Brand Name:IOR

Model Number:IRF540NS

Place of Origin:CHINA

... Avalanche Rated Lead-Free Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast ...

Place of Origin:China

Brand Name:ONSEMI

Model Number:HUF75631S3S

High Power MOSFET HUF75631S3S N-Channel UltraFET 100V, 33A, 40mΩ [Who we are?] Sunbeam Electronics (Hong Kong) Co. Ltd is focus on semi-conductors sourcing and electronic components sale and service for clients over 10 years, specialize in selling the new...

Brand Name:INFINEON

Model Number:IRF540NSTRLPBF

Place of Origin:Germany

...HEXFE Power MOSFET Transistor 100V 44mΩ 33A New Orignal high quality Parameters in details: Advanced HEXFET Power MOSFETs from Packaging: the TO - 263 Type: N channel Continuous drain current (ID) at 25°C: 33A Drain-source voltage (VDSS) : 100V Gate ...

Brand Name:original

Model Number:STP45N10F7

Place of Origin:Original Manufacturer

... Contact Us High Light: STP45N10F7 Integrated IC Chip , N Channel Power MOSFETs , 100V N channel Power MOSFETs STP45N10F7 MOSFET N-channel 100 V 0 013 Ohm typ 45 A STMicroelectronics STP45N10F7 is a power field-effect transistor (MOSFET) chip suitable for

Brand Name:ON

Model Number:FDMC86139P

Place of Origin:ON

FDMC86139P 4.4A 15A P Channel MOSFET 100V Moc Field Effect Tube FDMC86139P Moc field effect tube P channel 100V 4.4a /15A 8MLP QFN8 Manufacturer: onsemi Product Category: MOSFET RoHS: Details Technology: Si Mounting Style: SMD/SMT Package / Case: Power-33...

Brand Name:INFINEON

Model Number:IRF540NPBF

Place of Origin:GERMANY

Brand Name:Infineon

Model Number:IRFI4019HG-117P

Place of Origin:China

IRFI4019HG-117P 190A Power MOSFET 100V Ultra-Low Rds(on) 1.9mandOmega; TO-264 High Efficiency Robust Performance Superior Thermal Management and High Power Density for ...

Model Number:STW48N60DM2

Place of Origin:Guangdong, China

Brand Name:original

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Brand Name:Infineon Technologies

Model Number:IRFB7546PBF

Place of Origin:Multi-origin

Product Listing: IRFB7546PBF MOSFET Power Electronics • Vds: 75V • Id: 57A • Rds(on): 0.100ohm • Package: TO-220AB • Mounting Type: Through Hole • Configuration: Single • FET Type: MOSFET N-Channel • Transistor Polarity: N-Channel • Maximum Drain Source ...

Place of Origin:US

Brand Name:Original

Model Number:AOD478

Product Detail Packaging Cut Tape (CT) Part Status Discontinued at Digi-Key FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 2.5A (Ta), 11A (Tc) Drive Voltage (Max Rds On, Min ...

Brand Name:Toshiba

Model Number:TK100E10N1,S1X(S

Place of Origin:JAPAN

Product Description: Toshiba TK100E10N1,S1X(S Power IC Chip, which is a 650V, 30A MOSFET N, is an excellent choice for applications that require excellent performance even in extreme conditions. With its operating temperature range of -55℃ ~ +150℃ and ...

Brand Name:JUYI

Model Number:JY11M

Place of Origin:China

JY11M N Channel Enhancement Mode Power MOSFET By incorporating advanced trench processing techniques, the JY11M accomplishes a remarkable cell density, concurrently minimizing on-resistance and boasting a high repetitive avalanche rating. The convergence...

Place of Origin:Original

BUK9240-100A,118 Specifications Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 33A (Tc) Drive Voltage (Max Rds On,Min Rds On) 4.5V, 10V Vgs(th) (Max) @ Id 2V...

Brand Name:Original Factory

Model Number:AIMBG120R060M1

Place of Origin:CN

... in hybrid and electric vehicles. Built on a state-of-the-art SiC trench technology combined with .XT interconnection technology the silicon carbide mosfet is specifically designed to meet the

Brand Name:Hua Xuan Yang

Model Number:AP30N10P

Place of Origin:ShenZhen China

...Mosfet Power Transistor For Motor Control 30A 100V TO-220 Mosfet Power Transistor Description: The AP30N10P uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. Mosfet Power Transistor Features VDS = 100V ID = 30 A RDS(ON) < 40mΩ @ VGS=10V Mosfet...

Brand Name:FAIRCHILD

Model Number:FDB3632

Place of Origin:Thailand

FDB3632 / FDP3632 / FDI3632 N-Channel PowerTrench® MOSFET 100V, 80A, 9mΩ Features • rDS(ON) = 7.5mΩ (Typ.), VGS = 10V, ID = 80A • Qg(tot) = 84nC (Typ.), VGS = 10V • Low Miller Charge • Low QRR Body Diode • UIS Capability (Single Pulse and Repetitive Pulse...

Categories:Transistors - FETs, MOSFETs - RF

Country/Region:china

...100V,118 Overview\\\\nBLF8G27LS-100V,118 is a model belonging to the Transistors - FETs, MOSFETs - RF subcategory under Discrete Semiconductor. For specific product performance parameters, please refer to the data sheet, such as PDF files Docx documents, etc. We have BLF8G27LS-100V...

Brand Name:OEM/Anenerge

Model Number:AE-LAH65

Place of Origin:Shenzhen

... AC Adapter 65W 19.5V 3.33A 4.5*3.0mm For HP Compaq Notebook CE ROHs FCC Specification Brand: For HP/Compaq Product Name: Laptop AC Adapter/Charger Input: 100V~240V, 50~60Hz, 1.2A (Works Worldwide) Output: 19.5V 3.33A 65W DC tip: 4.5*3.0mm Outlet: 2 or...

Brand Name:Infineon

Model Number:IRF9540NPBF

Place of Origin:Original Factory

...extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET® Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in

Brand Name:Ti

Model Number:CSD19532Q5B

... Rectifier for Offline and Isolated DC- DC Converters Motor Control 3 Description This 100 V, 4 mΩ, SON 5-mm × 6-mm NexFETTM power MOSFET is designed to minimize losses in power conversion applications.