low power transistor

Place of Origin:Microsemi Power Products Group

Brand Name:MOT

Model Number:MRF581

...LOW POWER TRANSISTORS Description: Designed for high current, low power, low noise, amplifiers up to 1.0 GHz.. Low Noise - 2.5 dB @ 500 MHZ High Gain, Gain at Optimum Noise Figure = 15.5 dB @ 500 MHz Ftau - 5.0 GHz @ 10v, 75mA Cost Effective MacroX Package Applications: Designed for high current, low power, low...

Brand Name:Hua Xuan Yang

Model Number:AOD413A

Place of Origin:ShenZhen China

Small P Channel Mosfet High Side Switch / Low Power Transistor Long Life General Description The AOD413A uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. With the excellent thermal resistance of the DPAK ...

Brand Name:REASUNOS

Place of Origin:Guangdong, CN

5G Base Station Low Voltage MOSFET with SGT Process Low Power Loss *, *::before, *::after {box-sizing: border-box; } * {margin: 0; } html, body {height: 100%; } body {line-height: 1.5; -webkit-font-...

Brand Name:Analog Devices Inc.

Model Number:AD9364BBCZ

Place of Origin:Multi-origin

...Power Transistor High Performing Reliable Power Solutions Product Name: AD9364BBCZ RF Power Transistors Description: The AD9364BBCZ RF power transistor is a high-power class AB transistor designed for use in commercial, industrial and automotive applications. This device features a wide frequency range, high gain, and low distortion. Product Features: • Wide frequency range (DC - 3.5GHz) • High gain (17.5 dB @ 2.5GHz) • Low

Brand Name:Infineon

Model Number:IKW20N60T

Place of Origin:Original Factory

...Transistors IKW20N60T 600V 20A 166W Low Loss IGBT Power Transistor Description Low Loss DuoPack : IGBT in TRENCHSTOP™ and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode Features Lowest VCEsat drop for lower conduction losses Low...

Model Number:PBSS4160T,215

Place of Origin:CN

...low VCEsat transistor in a SOT23 plastic package PNP complement to PBSS5160T FEATURES • Low collector-emitter saturation voltage VCEsat • High collector current capability IC and ICM • High efficiency, reduces heat generation • Reduces printed-circuit board area required • Cost effective replacement for medium power transistor BCP55 and BCX55. APPLICATIONS • Major application segments: – Automotive 42 V power...

Brand Name:original

Model Number:PBSS4160T,215

Place of Origin:Original Manufacturer

...LOW VCESAT MOSFET POWER TRANSISTOR PNP COMPLEMENT PBSS4160T Goods Condition: Brand New Part Status: Active Lead Free / Rohs: Complaint Function: NPN Mounting Type: Surface Mount Package: SOT23 High Light: n channel mosfet transistor , n channel transistor PBSS4160T NPN low VCEsat transistor in a SOT23 plastic package PNP complement to PBSS5160T FEATURES • Low...

Brand Name:Original brand

Model Number:IGOT60R070D1AUMA1

Place of Origin:Original

...reverse conduction • Low gate charge, low output charge • Superior commutation ruggedness • Qualified for industrial applications according to JEDEC Standards (JESD47 and JESD22) Benefits • Improves system efficiency • Improves power density •

Brand Name:Hua Xuan Yang

Model Number:4306W-A

Place of Origin:ShenZhen China

Low Gate Charge Mosfet Power Transistor For Inverter Systems Management What is a Mosfet Power Transistor ? A power MOSFET is a special type of metal oxide semiconductor field effect transistor. It is specially designed to handle high-level powers. The power MOSFET’s are constructed in a V configuration. Therefore, it is also called as V-MOSFET, VFET. The symbols of N- channel & P- channel power MOSFET are shown in the below figure. Mosfet Power

Brand Name:ST

Model Number:TIP122

Place of Origin:Original Factory

...Transistors TIP122 Darlington NPN 100V 5A 2000mW TO220 Power Transistor TIP120, TIP121, TIP122 TIP125, TIP126, TIP127 Description The devices are manufactured in planar technology with “base island” layout and monolithic Darlington configuration. The resulting transistors show exceptional high gain performance coupled with very low saturation voltage. Features Designed for General purpose linear and switching applications. Low...

Brand Name:Lingxun

Place of Origin:China

Model Number:LT200N03AD

Multiscene Low Voltage MOSFET For 5G Base Station Low Power Transistor *, *::before, *::after {box-sizing: border-box;}* {margin: 0;}html, body {height: 100%;}body {line-height: 1.5;-webkit-font-smoothing: ...

Brand Name:NXP

Model Number:BFS505

Place of Origin:CHINA

...Transistors RF Transistor NPN 15V 18mA 9GHz 150mW Surface Mount NPN 9 GHz wideband transistor FEATURES • Low current consumption • High power gain • Low noise figure • High transition frequency • Gold metallization ensures excellent reliability • SOT323 envelope. DESCRIPTION NPN transistor in a plastic SOT323 envelope. It is intended for low power...

Brand Name:NEC

Model Number:2SD1594

Place of Origin:Japan

2SD1594 3 Pin Transistor NEC NPN Power Transistor Switching High Speed Silicon NPN Power Transistor NEC 2SD1594 DESCRIPTION · With TO-220Fa package · Low collector saturation voltage A PPLICATIONS · Low frequency power amplifier · High speed switching ...

Brand Name:Huixin

Model Number:MMDT3946DW SOT-363

Place of Origin:China

... Planar Die Construction Ideal for Low Power Amplification and Switching MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Parameter Symbol Value Units Collector-Base Voltage ...

Brand Name:CENO

Model Number:PSCN010-03P1

Place of Origin:China

... are specially designed and manufacture for ultra-low temperature working environments. Their contact materials and structures have been specially treated to ensure that they will not fail due to material embrittlement under extremely cold conditions. They

Brand Name:Standar

Model Number:AS1360-33-T

Place of Origin:Malaysia

1.5uA Low Power Mosfet Transistor AS1360-33-T Positive Voltage Regulator AS1360 1.5µA Low-Power, Positive Voltage Regulator 1 General Description The AS1360 low-power, positive voltage regulator was designed to deliver up to 250mA while consuming onl...

Brand Name:Original Factory

Model Number:AFGHL40T65RQDN

Place of Origin:CN

Low Power AFGHL40T65RQDN Single IGBTs Transistors Through Hole TO-247-3 Package Product Description Of AFGHL40T65RQDN AFGHL40T65RQDN is Low Power IGBT Field Stop Through Hole TO-247-3 Package.This Device is Pb−Free and RoHS Compliant. Specification Of AFGHL40T65RQDN Part Number: AFGHL40T65RQDN Package: TO-247-3 Continuous Collector Current At 25 C: 48 A Pd - Power...

Brand Name:Julun

Model Number:PG-TO 252-3

Place of Origin:CHINA

...Power Transistor Field Effect MOS Tube Features • Extremely low losses due to very low FOM RDS(on)*Qg and RDS(on)*Eoss • Excellent thermal behavior • Integrated ESD protection diode • Low switching losses (Eoss) • Product validation acc. JEDEC Standard Benefits • Cost competitive technology • Lower temperature • High ESD ruggedness • Enables efficiency gains at higher switching frequencies • Enables high power

Model Number:LMH6643

...Low Power,130 MHz, 75 mA Rail-to-Rail Output Amplifiers LMH6642,LMH6643,LMH6644 Applications • Active Filters • CD/DVD ROM • ADC Buffer Amp • Portable Video • Current Sense Buffer Our goods: Active components (IC integrated circuits, memory chips, diodes, transistors...

Categories:RF Transistors

Country/Region:china

... 20 AMPERE NPN Silicon Power Transistor 400- 500 VOLTS 175 WATTS Category Transistor Mfr Motololar Series - Part Status - Mounting Type - The MJ13333 transistor is designed for high voltage, high–speed, power switching in inductive circuits where fall...