microwave devices silicon carbide substrate

Brand Name:ZMSH

Model Number:Silicon Carbide

Place of Origin:China

...Silicon Carbide Substrate DSP (111) Semiconductor RF Microwave LED Lasers Description of SiC Wafer: The 6-inch P-Type Silicon Carbide (SiC) Wafer in either 4H or 6H polytype. It has similar properties as the N-type Silicon Carbide (SiC) wafer, such as high-temperature resistance, high thermal conductivity, high electrical conductivity, etc. P-type SiC substrate is generally used for manufacturing power devices...

Brand Name:zmkj

Model Number:4inch--semi high purity

Place of Origin:china

...Silicon Carbide Substrateshigh purity 4inch SiC substrates ,4inch Silicon Carbide substrates for semiconductor 4inch SiC substrates ,Silicon Carbide substrates for semconductor ,sic single crystal wafers ,sic ingots for gem​ Applications of SiC Crystal Substrates and Wafers Silicon carbide (SiC) crytsals have unique physical and electronic properties. Silicon Carbide based devices...

Place of Origin:China

Brand Name:CRYLINK

Model Number:CRYLINK-MgAl2O4Crystal

Description Magnesium Aluminate (MgAl2O4 or spinel) single crystalsare widely used for bulk acoustic wave and microwave devices and fast IC epitaxial substrates. MgAl2O4 is an attractive material for uses in a wide range of optical, electronic and ...

Place of Origin:Made In China

Dark Gray Silicon Carbide Ceramic Plate: Versatile High-Strength Industrial Substrate Product Introduction This product is manufactured using high-performance silicon carbide ceramic material, presenting a dark gray matte finish with a mirror-level ...

Brand Name:ZHENAN

Model Number:Silicon Carbide

Place of Origin:China

... and thermistors. SiC has flourished in the research of power electronic devices due to its excellent performance and excellent properties of silicon carbide devices. Silicon carbide can not only improve the voltage resistance of the device, but more

Brand Name:Ruideer

Model Number:Customizable

Place of Origin:China

...silicon carbide on the surface of the semiconductor epitaxial susceptor and etching ring. Epitaxial base, a high-purity graphite disk, with a circular groove on it to fix the wafer substrate. After placing them in the furnace, a layer of crystal film will

Brand Name:Huaemw

Model Number:HY-MF1516E

Place of Origin:China

... can also use Silicon Carbide for eletric heating source. HY-MF1516E uses infrared thermometer for temperature control, while the temperature measurement range of infrared thermometer is ...

Brand Name:Crystro

Model Number:CR210508-03

Place of Origin:China

Custom Gd3Ga5O12 Single Crystalline Substrates GGG is also substrate material for microwave devices. In the optical communication devices,require a lot of using 1.3u and 1.5u optical isolator,which core component is the YIG or BIG film been placed in a ...

Place of Origin:China

Product Description: Silicon carbide wafer boat is a wafer-growing device for wafers, which is made of silicon carbide materials.Wafer-growing device for wafers is the primary material in biology and semiconductor fields, whose quality and performance ...

Brand Name:KAMTAI

Model Number:KTSK15

Place of Origin:CHINA

... of attractive characteristics for high voltage power semiconductors when compared to commonly used silicon (Si). In particular, the much higher breakdown field strength and thermal conductivity of SiC allow creating devices which outperform by far the

Brand Name:REASUNOS

Place of Origin:Guangdong, CN

...Silicon Carbide MOSFETs (SiC Metal-Oxide-Semiconductor Field-Effect Transistor) are high-power and high-efficiency devices with a high frequency and low resistance. They are based on the national military standard production line, making the process stable and reliable. Silicon Carbide MOSFETs are composed of a Silicon Carbide...

Brand Name:CSQ

Model Number:customized products

Place of Origin:China

... features an advanced composite structure that bonds an extremely wear-resistant Silicon Carbide face to a high-strength Stainless Steel substrate, achieving a perfect union of superior wear resistance and excellent structural integrity. This product is

Brand Name:HMT

Model Number:6 INCH

Place of Origin:CHINA

...Carbide substrate semiconductor wafer supplier Homray Material Technologyprovide high quality silicon carbide SiC wafer to electronic and opto electronicindustry. Silicon carbide SiC waferis a next generation semiconductor material, with unique electricalpropertiesand excellent thermal properties , compared to silicon wafer and galliumarsenide wafer ,silicon carbide...

Brand Name:Original Factory

Model Number:STPSC20H12WL

Place of Origin:CN

...manufactured using a silicon carbide substrate. The wide band-gap material allows the design of a low VF Schottky diode structure with a 1200 V rating. Due to the Schottky construction, no ...

Brand Name:BD

Model Number:customers' need

Place of Origin:Weifang-China

Silicon Carbide Radiation Pipe Use In Heat Conduction And Heat Dissipation Devices Product Features 1. High temperature resistance 2. Good thermal conductivity and high thermal efficiency 3. Resistant to rapid cold and heat 4. ...

Place of Origin:Henan, China

Brand Name:Huanghe Whirlwind

Product Description Product Parameter Product Name PCD insert Brand HHW Application Abrasion-resistance materials, such as ceramic, hard metal, silicon carbide. Stone and laminate flooring. composite materials,carbon fiber materials, silicon-aluminum alloy...

Brand Name:Silicon carbide / SiC High Broad

Model Number:SiC armor

Place of Origin:Hunan,China

...Silicon carbide Boron carbide Ceramic independent protection Boron Carbide Tile Uses: Systems, semiconductor components, sputtering targets industrial wear components, boron carbide tiles are used in police and military vehicles for protection. Applications for Boron Carbide Tile Boron Carbide Tiles Boron Carbide Substrate Tiles Boron Carbide Insulator Tiles Boron Carbide Panels Boron Carbide...

Brand Name:Customized

Place of Origin:China

Nitride Ceramic Guide Roller Si3N4 Parts / Catalyst Substrate ceramic honeycomb for Heat EXchange Media parts : Quick Details: Optional Materials alumina, zirconia, silicon carbide, silicon nitride, steatite optional Outer diameter 0.5 ~800 mm Length 1~...

Place of Origin:China

...Silicon Carbide Rod Description MAX TEMPERATURE:: Up To 1600℃ APPLICATION:: Electric Furnaces And Electric Heating Devices PRODUCTS:: SiC Heating Elements SHAPE:: ED/U/W/SC/SCR/DB/G/H/DM POWER SOURCE:: Electric PURITY:: 99.9% High Purity High Light: High Temperature SiC Heating Elements , 1400C SiC Heating Elements , 1600C Silicon Carbide Rod High Temperature SiC Heating Elements, 1600°C Silicon

Brand Name:Brother Furnace

Model Number:BR

Place of Origin:China

High Temperature SiC Heating Elements, 1400°C Silicon Carbide Heating Rod Application: Widely used in various high temperature electric furnaces and other electric heating devices, such as in the industries of magnet, ceramics, powder metallurgy, glass, ...