multifunctional power transistor and igbt

Brand Name:REASUNOS

Place of Origin:Guangdong, CN

... is designed to support applications with high frequency up to 60KHz, and offers a current density of 400A/c㎡. High Power IGBT is an ideal choice for use in a wide range of applications requiring high speed switching and high power. Technical Parameters:

Brand Name:Lingxun

Model Number:LGT10N65T

Place of Origin:China

Multifunctional Power Transistor And Inverter IGBT High Voltage 1200V 40A Features • Positive temperature coefficient • Fast Switching • Low VCE(sat) • Reliable and Rugged ...

Place of Origin:MALAYSIA

Brand Name:MOTOROLA

Model Number:PRFM51X02

PRFM51X02 is a IGBT Module-Dual. Part NO: PRFM51X02 Brand: MOTOROLA Date Code: 03+ Quality Warranty: 3 Months Mounting Type: Screws Overview Mega Source Electronic Co., LTD specializes in High frequency microwave devices: These products are widely used in ...

Brand Name:ON

Model Number:FGH60N60SMD

Place of Origin:Original

Fgh60n60sfd Igbt Power Transistor 60a 600v To247 Igbt Transistors Description Using novel field stop IGBT technology, ON Semiconductor’s new series of field stop 2nd generation IGBTs offer the optimum performance for solar inverter, UPS, welder, telecom...

Brand Name:Fairchild/ON

Model Number:FGH60N60SMD

Place of Origin:CN

... Parameter Distribution • RoHS compliant Applications • Solar Inverter, UPS, SMPS, PFC • Induction Heating Using Novel Field Stop IGBT Technology,

Brand Name:Original Factory

Model Number:FF450R12ME4

Place of Origin:CN

Transistors FF450R12ME4 IGBT Module Trench Field Stop Half Bridge Inverter Product Description Of FF450R12ME4 FF450R12ME4 is 1200 V, 450 A dual IGBT Module with TRENCHSTOP™ IGBT4, Emitter Controlled HE diode and NTC. Also available with Thermal Interface Material or as variation with PressFIT mounting technology. Specification Of FF450R12ME4 Part Number FF450R12ME4 Power...

Brand Name:onsemi

Model Number:NGTB40N120SWG

...Igbt Power Module Transistors NGTB40N120SWG Charging Pile Inverter Welding Chip App Characteristics TJmax = 175°C • Soft Fast Reverse Recovery Diode Optimized for High Speed Switching 10 us Short Circuit Capability These are Pb−Free Devices Basic Data Product Attribute Attribute Value Manufacturer: onsemi Product Category: IGBT Transistors...

Brand Name:IXYS

Model Number:IXYK110N120A4

IXYK110N120A4 IGBT PT 1200 V 375 A 1360 W Through Hole TO-264 (IXYK) IXYS Trench 650V to 1200V XPT™ GenX4™ IGBTs IXYS Trench 650V to 1200V XPT™ GenX4™ IGBTs are developed using a proprietary XPT thin-wafer technology and a state-of-the-art 4th generation (...

Brand Name:ONSEMI

Model Number:BD135

Place of Origin:Original

BD135 Silicon NPN Power Transistors high voltage power mosfet dual power mosfet This series of plastic, medium−power silicon NPN transistors are designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits. ...

Brand Name:KRUNTER

Model Number:KWG600H12N4B

Place of Origin:CHINA

... exceptional performance in various industrial settings requiring efficient power management. This specific product falls under the category of IGBT Module and is known as the KWP75H12E4-7M IGBT Module Half-Bridge Circuit. It is engineered to cater to the

Place of Origin:US

Brand Name:Original

Model Number:FGH40N60SMD

Product Detail Packaging Tube Part Status Active IGBT Type Field Stop Voltage - Collector Emitter Breakdown (Max) 600V Current - Collector (Ic) (Max) 80A Current - Collector Pulsed (Icm) 120A Vce(on) (Max) @ Vge, Ic 2.5V @ 15V, 40A Power - Max 349W ...

Brand Name:MISNCO

Model Number:LGK-60IGBT

Place of Origin:Beijing, China

... gate high power transistor IGBT and pulse width modulation (PWM) soft switching technology are used to design and manufacture. The cutting machine can cut all metal materials, ...

Brand Name:Texas Instruments

Model Number:TCAN1042GDQ1

...IGBT Insulated Gate Bipolar Transistor Power Module TCAN1042GDQ1 IGBT Power Module Texas Instruments/TI TCAN1042GDQ1 Protocols CAN, CAN FD Number of channels (#) 1 Supply voltage (V) 4.5 to 5.5 Bus fault voltage (V) -58 to 58 Signaling rate (Max) (Mbps) 5 TI functional safety category Functional Safety-Capable Rating Automotive Operating temperature range (C) -55 to 125 Low power...

Brand Name:Infineon Technologies

Model Number:IKW50N60DTPXKSA1

Place of Origin:original

IKW50N60DTPXKSA1 IGBT Power Module – High Voltage High Power Capacity IKW50N60DTPXKSA1 IGBT Power Module Product Description: The IKW50N60DTPXKSA1 IGBT Power Module is a high-performance, low-loss, insulated-gate bipolar transistor that provides superior...

Brand Name:Hua Xuan Yang

Model Number:AP4434AGYT-HF

Place of Origin:Shenzhen, China

...IGBT/Diode Switching/Transistor IC Chips Description AP4434A series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power...

Brand Name:ON

Model Number:MMBT5551LT1G

Place of Origin:ON

... IGBT Power Module 600mA 160V BJT Bipolar Transistors MMBT5551LT1G SOT-23-3 Bipolar Transistors - BJT 600mA 160V NPN Manufacturer: onsemi Product Category: Bipolar Transistors - BJT RoHS: Details Mounting Style: SMD/SMT Package / Case: SOT-23-3 Transistor ...

Brand Name:Toshiba

Model Number:MG200Q1US51

Place of Origin:Japan

...IGBT Power Module MG200Q1US51 Transistor Module MG200Q1US51 Product Description Manufactured by: Toshiba America, Inc. Part number: MG200Q1US51 Part Category: Transistors Description: 300A, 1200V, N-CHANNEL IGBT Collector-Emitter Voltage: 1200V Gate-Emitter Voltage: 20V Collector Current (DC): 300A Forward Current: (DC): 200A Collector Power...

Brand Name:TOSHIBA

Model Number:2SC5200-O

Place of Origin:Original

...POWER AMPLIFIER APPLICATIONS high power mosfet transistors STOCK LIST MPC89E58AF 5910 MEGAWIN 16+ PQFP CS4398-CZZR 2234 CIRRUS 15+ TSSOP LC4064V-75TN100-10I 3070 LATTICE 15+ QFP ME0550-02DA 595 IXYS 14+ IGBT MDD26-14N1B 5902 IXYS 16+ IGBT MT9V024IA7XTM 2499 ON 15+ BGA MCC21-1408B 4756 IXYS 14+ IGBT...

Brand Name:StarPower

Model Number:GD200FFY120C6S

Place of Origin:CHN

...TRANSISTOR IGBT MODULE 1.2KV 309A SEMICONDUCTOR Manufacturer: StarPower Europe AG Product Category: IGBT MODULE RoHS: Details Type: IGBT MODULE Brand: StarPower Operating Supply Voltage: 1.2 V Packaging: Standard Subcategory: IGBT MODULE Description STARPOWER IGBT Power...