multiscene silicon carbide power mosfet

Brand Name:REASUNOS

Place of Origin:Guangdong, CN

High Power Silicon Carbide MOSFET for Solar Inverter Application *, *::before, *::after {box-sizing: border-box; } * {margin: 0; } html, body {height: 100%; } body {line-height: 1.5; -webkit-font-smoothing: antialiased; } img, picture, video, canvas, svg {...

Brand Name:Original Factory

Model Number:SCTWA50N120

Place of Origin:CN

...MOSFET SCTWA50N120 N-Channel Silicon Carbide Power MOSFET Through Hole HiP247 Product Description Of SCTWA50N120 SCTWA50N120 Silicon carbide Power MOSFET 1200 V, 65 A, 59 mΩ (typ., TJ=150 °C) in an HiP247™ long leads package. Specification Of SCTWA50N120 Part Number: SCTWA50N120 FET Type: N-Channel Technology: SiCFET (Silicon Carbide...

Brand Name:SANYO

Model Number:2SD1625

Place of Origin:Philippines

Silicon RF Power Mosfet Transistors IC 2SD1625 PNP / NPN Epitaxial Planar 2SD1625 Driver Applications PNP/NPN Epitaxial Planar Silicon Transistors IC Applications Motor drivers, printer hammer drivers, relay dreiver,voltage regulator control Features High ...

Model Number:C3M0016120K

Place of Origin:original

Brand Name:original

#detail_decorate_root .magic-0{margin-bottom:10px;overflow:hidden}#detail_decorate_root .magic-1{border-bottom-style:solid;border-bottom-color:#53647a;font-family:Roboto;font-size:24px;color:#53647a;font-style:normal;border-bottom-width:2px;padding-top:8px...

Model Number:2SC5200

Place of Origin:original factory

2SC5200/FJL4315 NPN Epitaxial Silicon Transistor Applications • High-Fidelity Audio Output Amplifier • General Purpose Power Amplifier Features • High Current Capability: IC = 15A. • High Power Dissipation : 150watts. • High Frequency : 30MHz. • High ...

Model Number:D2010UK

Place of Origin:Malaysia

Brand Name:KAIGENG

D2010UK N/A Electronic Components IC MCU Microcontroller Integrated Circuits D2010UK #detail_decorate_root .magic-0{border-bottom-style:solid;border-bottom-color:#53647a;font-family:Roboto;font-size:24px;color:#53647a;font-style:normal;border-bottom-width:...

Brand Name:Ruideer

Model Number:Customizable

Place of Origin:China

... semiconductors. They are found in everything from your smartphone or tablet, to even higher power applications such as server farms and solar arrays. More specifically, semiconductors are a key part of the components that make up electronic systems,

Brand Name:ZHENAN

Model Number:Silicon Carbide

Place of Origin:China

...Silicon Carbide Is Used as a Refractory in Ceramic Production Sic Description: Why can silicon carbide withstand such high voltages? Power devices, especially MOSFETs, must be able to handle extremely high voltages. SiC can achieve very high breakdown voltages, from 600V to several thousand volts, due to the dielectric breakdown strength of the electric field being about ten times higher than that of silicon...

Brand Name:ZMSH

Model Number:SiC Powder

Place of Origin:China

...Silicon Carbide (SiC) Powder for Industrial and Ceramic Applications Introduction of Silicon Carbide Power: Silicon carbide powder (SiC) is an abrasive material that is made by heating silicon and carbon together. It is a very hard material, with a Mohs hardness of 9, and is resistant to wear and corrosion. Silicon carbide powder is used in a variety of applications. Silicon carbide...

Brand Name:ANNEC

Model Number:customized shape

Silicon Carbide Brick Widely Used In Power Plant Silicon carbide pipes are also known as silicon ceramic pipes, which belong to the refractory pipe family. This kind of pipe is made of clay bonded silicon carbide material, which has good wear resistance, heat resistance, corrosion resistance and high temperature performance. Silicon carbide...

Brand Name:Mitsubishi

Model Number:RD06HVF1

Place of Origin:CN

... applications FEATURES of RD06HVF1 High power gain: Pout>6W, Gp>13dB @Vdd=12.5V,f=175MHz APPLICATION of RD06HVF1 For output stage of high power amplifiers in VHF band mobile radio sets. List Of Other Electronic Components In Stock PART NUMBER MFG/BRAND 　

Brand Name:zmkj

Model Number:4inch--semi high purity

Place of Origin:china

...Silicon Carbide Substrates,high purity 4inch SiC substrates ,4inch Silicon Carbide substrates for semiconductor, 4inch SiC substrates ,Silicon Carbide substrates for semconductor ,sic single crystal wafers ,sic ingots for gem​ Application areas 1 high frequency and high power electronic devices Schottky diodes, JFET, BJT, PiN, diodes, IGBT, MOSFET...

Brand Name:BD

Model Number:1-4inch

Place of Origin:China

..., and chemical resistance. The strength of RBSC is almost 50% greater than that of most nitride bonded silicon carbides. It can be formed into a variety of shapes, including cone and sleeve shapes, as well as more complex engineered pieces designed for

Place of Origin:China

Brand Name:SONGYU

ED Type Silicon Carbide Rod The ED-type products among silicon carbide rods have already become powerful substitutes for thick-end silicon carbide rods. Their advantages are extremely remarkable. The first and foremost is that their end resistances are ...

Place of Origin:China

... product is commonly used in the production of SISIC heat exchangers, which are used in various industries such as chemical, petrochemical, and power generation. Silicon Carbide Ceramics are also widely used in the manufacturing of silicon carbide ceramic

Brand Name:KAMTAI

Model Number:KTSK15

Place of Origin:CHINA

... of attractive characteristics for high voltage power semiconductors when compared to commonly used silicon (Si). In particular, the much higher breakdown field strength and thermal conductivity of SiC allow creating devices which outperform by far the

Place of Origin:PHILIPPINE

Brand Name:Fuji Electric

Model Number:FMH23N50E

...power loss and low noise Lower RDS(on) characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing ...

Brand Name:Infineon Technologies

Model Number:IRF3205PBF

Place of Origin:Original

...Silicon Npn Power Transistors 55V 110A 8.0mΩ Power MOSFET Npn Power Transistor Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs...

Brand Name:Infineon Technologies

Model Number:IRFR120NTRLPBF

Place of Origin:Multi-origin

...: 60V • Continuous Drain Current: -11A • Power Dissipation: 4.5W • Operating Junction Temperature: -55°C to 175°C • On Resistance RDS(ON): 0.042Ω • Transistor Polarity: N-Channel • Mounting Style: ...

Brand Name:CSQ

Model Number:customized products

Place of Origin:China

...silicon carbide sliding bearing Customized Silicon Carbide Sliding Bearing for Canned Motor Pump Description of Sliding Bearing for Canned Motor Pump: Silicon carbide sliding bearings are a critical component in canned motor pumps, designed for demanding industrial applications such as chemical processing, petrochemical refining, and nuclear power systems. These bearings are manufactured using high-purity reaction-bonded silicon