new mos fet transistor

Place of Origin:US

Brand Name:Original

Model Number:AOD478

Product Detail Packaging Cut Tape (CT) Part Status Discontinued at Digi-Key FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 2.5A (Ta), 11A (Tc) Drive Voltage (Max Rds On, Min Rds...

Brand Name:RENESAS

Model Number:2SK1305

Place of Origin:Japan

Original Transistor 2SK1305 Silicon N Channel MOS FET IC Components Original Transistor 2SK1305 Silicon N Channel MOS FET TO-3P Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device  Can be driven fro...

Place of Origin:Japan

Brand Name:RENESAS

Model Number:2SK2939-90STL

...Part No 2SK2939-90STL Manufacturer RENESAS Package TO-263 Description New and Original Shipping: 1, We can shipping all over the world by DHL, UPS, FEdex, TNT and EMS. The packaging is very safe and strong. Please nitfy me you have any special needs 2,

Brand Name:ON

Model Number:NTJD5121NT1G

Place of Origin:ON

.../SMT Package / Case: SC-88-6 Transistor Polarity: N-Channel Number of Channels: 2 Channel Vds - Drain-Source Breakdown Voltage: 60 V Id - Continuous Drain Current: ...

Model Number:AO3400A

Place of Origin:original

Brand Name:original

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Brand Name:REASUNOS

Place of Origin:Guangdong, CN

Product Description: High Voltage MOS-Gate Transistor, commonly known as High Voltage FET, is a type of semiconductor device designed for use in high voltage applications. This device has been gaining popularity due to its strong performance and wide range...

Model Number:SPA04N60C3

Place of Origin:original factory

SPP04N60C3, SPB04N60C3 Final data SPA04N60C3 Cool MOSô Power Transistor VDS @ Tjmax 650 V RDS(on) 0.95 Ω ID 4.5 A Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • ...

Brand Name:Original Factory

Model Number:IPP65R050CFD7A

Place of Origin:CN

...220-3, Through Hole. Specification Of IPP65R050CFD7A Part Number IPP65R050CFD7A FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 650 V Current - Continuous Drain (Id) @ ...

Brand Name:INFINEON

Model Number:IRFP3306PBF

IRFP3306PBF TO-247 MOS FET 60V 110A High Power and High Current PRODUCT DESCRIPTION Part number IRFP3306PBF is manufactured by INFINEON and distributed by Stjk. As one of the leading distributors of electronic products, we carry many electronic components...

Brand Name:Alpha & Omega Semiconductor Inc.

Model Number:AO4616

Texas Instruments LMV7219M5X/NOPB IC COMPARATOR 2.7V-5V RR SOT23-5 Integrated Circuits (ICs) Linear Comparators Description The LMV7219 is a low-power, high-speed comparator with internal hysteresis. The LMV7219 operating voltage ranges from 2.7 V to 5 V...

Place of Origin:China

1 Product Description Item Descriptions Brand ALL Brands Model Number ALL Models Available Place of Origin China, US, KR, Taiwan China, HK China, etc. Package Yes Product Name Integrated Circuits Condition New Shipping DHL\UPS\Fedex\TNT\EMS\ePacket Lead ...

Brand Name:AOS

Model Number:AO4622

Place of Origin:AMERICA

Model Number:EECF5R5U105

Place of Origin:Guangdong, China

Brand Name:KAIGENG

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Place of Origin:Guangdong, China

Brand Name:original

Model Number:CSD16321Q5 VSON-8 N-channel 25V 31A

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Brand Name:ST brand

Model Number:STB270N4F3 STB270N TO-263-3

Place of Origin:Japan

...Contact me now Whatsapp/ Skype/ Number 86- 15102073750 - Product Description - Items: New STB270N4F3 Part number: STB270N4F3 Package: Standard Electronic Components Thanks to choose our product extremely. We will provide you with the best quality and most

Model Number:2SK2225-E

Place of Origin:Guangdong, China

Brand Name:original

MOSFET N-CH 1500V 2A IC Chip TO-3P 2SK2225-80-E-T2 2SK2225 Products Description: 1. Silicon N Channel MOS FET Silicon N Channel MOS FET, through hole N Channel 2A (Ta) 50W (Tc) TO 3PFM 2.Trans MOSFET N-CH Si 1.5kV 2A 3-PIN (3+Tab) TO 3PFM Tube 3.Suitable...

Brand Name:Mitsubishi

Model Number:RD06HVF1

Place of Origin:CN

RD06HVF1 RF POWER MOSFET Silicon Transistor 175MHz 6W for amplifiers applications Description of RD06HVF1 RD06HVF1 is a MOS FET type transistor specifically designed for VHF RF power amplifiers applications FEATURES of RD06HVF1 High power gain: Pout>6W, Gp...

Brand Name:Julun

Model Number:PG-TO 252/PG-TO 251

Place of Origin:CHINA

IPD70R1K4CE, IPS70R1K4CE FET 700V CoolMOS CE Power Transistor MOS tube Features • Extremely low losses due to very low FOM Rdson*Qg and Eoss • Very high commutation ruggedness • Easy to use/...

Brand Name:Hua Xuan Yang

Model Number:3403D-U-V

Place of Origin:ShenZhen China

..., especially as switches. Variant s include planar MOSFETs, VMOS, UMOS TrenchMOS, HEXFETs and other different brand names. Mos Field Effect Transistor Feature 30V/100A R DS(ON) = 2.4mΩ(typ.) @V GS = 10V R DS(ON) = 2.9mΩ(typ.) @V GS = 4.5V 100%

Brand Name:Hua Xuan Yang

Model Number:G170C03LR1S

Place of Origin:ShenZhen China

..., especially as switches. Variant s include planar MOSFETs, VMOS, UMOS TrenchMOS, HEXFETs and other different brand names. Mos Field Effect Transistor Feature N- Channel P - Channel Vds = 30V Vds = -30V 9.5 A (Vgs= 10V) - 8 A (Vgs= -10V) 12.9 mΩ