npn amplifier high voltage transistor

Brand Name:Original

Model Number:MMBT5551

...NPN General-Purpose Amplifier MMBT5550LT1 High Voltage Transistor NPN Silicon SOT-23 - Power Transistor and Darlingtons Part number BC807-T CMBTA56-T CMBT4403-T CMBTA06 CMBT3906-T CMBT3906 CMBTA56 CMBTA42-T CMBT4401-T CMBTA42 CMBT3904 CMBT4403 CMBTA92 CMBT5551 CMBT5401 CMBT5551-T CMBT3904-T CMBTA92-T CMBTA06-T CMBT5401-T CMBT4401 CMBT9014 MMBT5551 Electrical Characteristics Mfr. # MMBT5551 Mounting Style SMD/SMT Transistor

Brand Name:Original

Model Number:MMBT5551

2N5551 / MMBT5551 NPN通用放大器MMBT5550LT1高压晶体管NPN硅 SOT-23 - Power Transistor and DarliCM GROUPons Part number BC807-T CMBTA56-T CMBT4403-T CMBTA06 CMBT3906-T CMBT3906 CMBTA56 CMBTA42-T CMBT4401-T CMBTA42 CMBT3904 CMBT4403 CMBTA92 CMBT5551 CMBT5401 CMBT5551-T ...

Place of Origin:PHILIPPINE

Brand Name:MOT

Model Number:MRF571

... plastic packages. This Motorola series of small–signal plastic transistors offers superior quality and performance at low cost. . Applications: • High Gain–Bandwidth Product fT = 8.0 GHz (Typ) @ 50 mA • Low Noise Figure NFmin = 1.6 dB (Typ)

Brand Name:REASUNOS

Place of Origin:Guangdong, CN

.... These N-type transistors are extremely reliable and provide excellent performance in multiple applications. These transistors are commonly used for LED driver, adaptors, industrial switching power supply, inverters, smart meter, cabinet power supply,

Brand Name:Hua Xuan Yang

Model Number:50P06D TO-252

Place of Origin:ShenZhen China

...is device is suitable for use as a load switch or in PWM applications P Channel Transistor GENERAL FEATURES V DS =- 60V,I D =-50A R DS(ON) < 25mΩ @ V GS =-10V R DS(ON) < 30mΩ @ V GS =-4.5V High Power and current handing capability Lead free product is

Brand Name:Lingxun

Place of Origin:China

Product Description: Power N Type Low Junction Capacitance Transistor One of the unique features of this semiconductor is its low junction capacitance. This attribute ensures that there is minimal power loss when the semiconductor is switched on and off....

Place of Origin:Afghanistan

Brand Name:Original

Model Number:BFN19

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Brand Name:ONSEMI

Model Number:BD135

Place of Origin:Original

BD135 Silicon NPN Power Transistors high voltage power mosfet dual power mosfet This series of plastic, medium−power silicon NPN transistors are designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits. ...

Brand Name:NEC

Model Number:2SC2987

Place of Origin:JAPAN

...NPN PNP Transistors Silicon NPN Power Transistors DESCRIPTION ·With TO-3PN package ·Complement to type 2SA1227 ·High power dissipation APPLICATIONS ·For audio frequency power amplifier applications PINNING PIN DESCRIPTION 1 Base 2Collector;connected to mounting base 3 Emitter Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE VCBO Collector-base voltage Open emitter 140V VCEO Collector-emitter voltage...

Brand Name:UCHI

Model Number:3904W /3906W

Place of Origin:Dongguan China

...NPN and PNP Silicon FEATURES -These transistors are designed for general purpose amplifier applications. They are housed in the SOT–323/SC–70 which is designed for low power surface mount applications. - Pb-Free Package is available. GENERAL PURPOSE AMPLIFIER TRANSISTORS...

Brand Name:TI

Model Number:ULN2003ADR

Place of Origin:CN

...HIGH-VOLTAGE HIGH-CURRENT DARLINGTON TRANSISTOR ARRAY Bipolar (BJT) Transistor Array 7 NPN Darlington 50V 500mA 16-SOIC Manufacturer Texas Instruments Series - Packaging Tape & Reel (TR) Part Status Active Transistor Type 7 NPN Darlington Current - Collector (Ic) (Max) 500mA Voltage...

Brand Name:ST

Model Number:TIP42C

Place of Origin:Original Factory

...Transistor MOSFET Transistors for Switch Circuit TIP41C TIP42C Description The TIP41C is a base island technology NPN power transistor in TO-220 plastic package that make this device suitable for audio, power linear and switching applications. The complementary PNP type is TIP42C Features Complementary PNP-NPN devices New enhanced series High...

Brand Name:Texas Instruments

Model Number:BQ26100DRPR

Place of Origin:N/S

NPN PNP Transistor Texas Instruments/TI BQ26100DRPR ECAD Module Build or Request PCB Footprint or Symbol Supply and Demand Status Balance Fake Threat In the Open Market 54 pct. Popularity High Is this a common-used part? Yes Win Source Part Number 011972-...

Brand Name:ON

Model Number:FDA59N30

Place of Origin:Original

FDA59N30 Pnp Power Transistor 59A 300V N-Channel 56 MOhms High Power Transistor Description These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar stripe,DMOS technology.This advanced technology...

Brand Name:Central Semiconductor

Model Number:CMPT2484TRPBF

Place of Origin:CHINA

...Transistors GP BJT NPN 60V 50mA 3-Pin SOT-23 Discrete Semiconductor Specification : Category Discrete Semiconductor Products 　 Diodes - Diode SCHOTTKY Part number CMPT2484TR Package Tape & Reel (TR) Part Status Active Voltage - Zener (Nom) (Vz) 60 V Description Trans GP BJT NPN...

Place of Origin:ShenZhen China

Brand Name:OTOMO

Model Number:MJE13003

...Transistors MJE13003 TRANSISTOR (NPN) FEATURE Ÿ Power Switching Applications MARKING MJE13003=Device code Solid dot = Green molding compound device, if none, the normal device ORDERING INFORMATION Part Number Package Packing Method Pack Quantity MJE13003 TO-126 Bulk 200pcs/Bag MJE13003-TU TO-126 Tube 60pcs/Tube MAXIMUM RATINGS (Ta =25 Š unless otherwise noted) Symbol Parameter Value Unit VCBO Collector -Base Voltage...

Brand Name:original

Model Number:LN2306LT1G

...NPN Transistor PNP SOT-23(SOT-23-3) LN2306LT1G Products Description: 1. Trans MOSFET N-CH 30V 5.8A 3-Pin SOT-23 T/R 2. Diodes and Rectifiers N-channel 30V 5.8A 3. High Density Cell Design For Ultra Low On-Resistance 4 Advanced trench process technology 30V N-Channel Enhancement-Mode MOSFET Technological Parameters: Drain-source resistance 0.038 Ω polarity N threshold voltage 0.7 V Drain-Source Voltage...

Brand Name:SWT

Model Number:SW-PA-600011000-50C

Place of Origin:China

...High Power Amplifier Psat 49.5 dBm High Voltage RF Power Amplifier for microwave links Description This high-voltage RF power amplifier operates in the frequency range of 6 to 11 GHz and features a Psat (saturated output power) of 49.5 dBm. It is designed to deliver high-power output within this specific frequency band while maintaining signal integrity and reliability. Key features of this amplifier...

Brand Name:ADI

Model Number:AD8092ARMZ-REEL7

Place of Origin:original

.../µs Gain Bandwidth Product 50 MHz -3db Bandwidth 110 MHz Current - Input Bias 1.4 µA Voltage - Input Offset 1.8 mV Current - Supply 4.8mA (x2 Channels) Current - Output / Channel 45 mA Voltage - Supply Span (Min) 3 V Voltage - Supply Span (Max)

Brand Name:TX TELSIG

Model Number:YP3035W

Place of Origin:China

...band. The device is manufactured on an advanced InGaP Heterojunction Bipolar Transistor (HBT) process, The amplifier provides a typical gain of 30 dB and P1dB power of 34.5dBm, typical bias condition is 5V at 450 mA. The ...