p channel power mosfet 60v

Place of Origin:China

Brand Name:ONSEMI

Model Number:ATP113

High Power MOSFET ATP113 P-Channel Power MOSFET, -60V, -35A, 29.5mΩ [Who we are?] Sunbeam Electronics (Hong Kong) Co. Ltd is focus on semi-conductors sourcing and electronic components sale and service for ...

Brand Name:Infineon

Model Number:BSC016N06NSATMA1

Place of Origin:original

BSC016N06NSATMA1 MOSFET Power Electronics N-Channel OptiMOSTM Power-MOSFET 60V FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60 V Current - Continuous Drain (Id) @ 25°C 30A (Ta), 100A (Tc) Drive Voltage (Max Rds On, Min ...

Brand Name:original

Model Number:NX7002AK,215

...Channel Trench MOSFET 60V 190mA Single SMD/SMT Products Description: The NX7002AK is a N-channel enhancement mode Field-Effect Transistor (FET) in a Surface Mounted Device (SMD) plastic package using Trench MOSFET technology. Very Fast Switching ESD Protection Upto 1.5kV MOSFET N-CH 60V 190MA TO236AB Trans MOSFET N-CH 60V...

Brand Name:ST Microelectronics

Model Number:STM32F051K6U6

Place of Origin:CHINA

...Channel Power MOSFET 60V 60A 110W (Tc) Through Hole Switching application Description This Power MOSFET is the latest development of STMicroelectronics unique “single feature size”™ strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. FET Type N-Channel...

Brand Name:STMicroelectronics

Model Number:STP55NF06FP

Place of Origin:China

STP55NF06FP 55A 60V N-Channel Power MOSFET with andlt;0.02andOmega; RDS(on) TO-220FP Avalanche Rated Logic Level High Speed Switching and Low Gate Charge for Efficient Power Control andnbsp; Features 1:Low On-Resistance (Low RDS(on)): Extremely low maximum...

Brand Name:Anterwell

Model Number:RFP70N06

Place of Origin:original factory

RFG70N06, RFP70N06, RF1S70N06SM 70A, 60V, 0.014 Ohm, N-Channel Power MOSFETs These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of ...

Model Number:RFP70N06

Place of Origin:original factory

RFG70N06, RFP70N06, RF1S70N06SM 70A, 60V, 0.014 Ohm, N-Channel Power MOSFETs These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of ...

Brand Name:Onsemi

Model Number:2N7002KT1G 2V7002KT1G 2N7002KT7G

Place of Origin:CHINA

2N7002K 2V7002K Signal mosfet N-Channel Small 60V 380mA semiconductor components Discrete&Power Modules 2N7002K 2V7002K N-Channel Small Signal MOSFET 60V 380mA Applications: Low Side Load Switch Level Shift Circuits DC−DC Converter Portable Applications...

Brand Name:Onsemi

Model Number:2N7002KT1G 2V7002KT1G 2N7002KT7G

Product Description 2N7002K 2V7002K Signal mosfet N-Channel Small 60V 380mA semiconductor components Discrete&Power Modules 2N7002K 2V7002K N-Channel Small Signal MOSFET 60V 380mA Applications: Low Side Load Switch Level Shift Circuits DC−DC Converter ...

Brand Name:HT

Model Number:F7N65L TO-220F-3L

Place of Origin:China

...CHANNEL POWER MOSFET 7A 650V Applications In Switching Power Supplies And Adaptors 7A, 650V N-CHANNEL TO-220F-3L POWER MOSFET DESCRIPTION The F7N65 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET...

Brand Name:Hua Xuan Yang

Model Number:2N60

Place of Origin:ShenZhen China

...low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits.

Brand Name:original

Model Number:STP45N10F7

Place of Origin:Original Manufacturer

... Contact Us High Light: STP45N10F7 Integrated IC Chip , N Channel Power MOSFETs , 100V N channel Power MOSFETs STP45N10F7 MOSFET N-channel 100 V 0 013 Ohm typ 45 A STMicroelectronics STP45N10F7 is a power field-effect transistor (MOSFET) chip suitable for

Brand Name:Original Factory

Model Number:MSC750SMA170S

Place of Origin:CN

...Channel Power MOSFET MSC750SMA170S Integrated Circuit Chip TO-268-3​ Product Description Of MSC750SMA170S MSC750SMA170S is a 1700 V, 750 mΩ Silicon Carbide N-Channel Power MOSFET in a TO-268 (D3PAK) package, Surface Mount. Specification Of MSC750SMA170S Part Number: MSC750SMA170S Technology: SiC Mounting Style: SMD/SMT Package / Case: D3PAK-3 Transistor Polarity: N-Channel Number of Channels: 1 Channel...

Brand Name:STMicroelectronics

Model Number:STP15810

Place of Origin:Shenzhen, China

... charge for faster and more efficient switching. Features : 100% avalanche tested Ultra low on-resistance Distinctive Characteristics : Part No: STP15810 Description: N Channel Power MOSFET Rad Hardened: No

Brand Name:IR Original

Model Number:IR21094STRPBF

Place of Origin:Original & New

IR21094STRPBF high voltage, high speed power MOSFET and IGBT drivers Description The IR2109(4)(S) are high voltage, high speed power MOSFET and IGBT drivers with dependent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS...

Brand Name:IR

Model Number:IRFP260MPBF

Place of Origin:USA

IRFP260MPBF N - Channel Power Mosfet 200V 50A Through Hole Metal Oxide TO247-3 FEATURES Type : MOSFETS-Single Packaging :Tube Part state: ACTIVE FET type : N - Channel Technology : MOSFET (Metal Oxide) Drain-source voltage (VDSS) : 200V Current - ...

Brand Name:Original brand

Model Number:IPT004N03LATMA1

Place of Origin:China

...IC Integrated Circuits Chip N Channel Power MOSFET Product Description Optimizedfore-fuseandORingapplication Verylowon-resistanceRDS(on)@VGS=4.5V 100%avalanchetested Superiorthermalresistance N-channel QualifiedaccordingtoJEDEC1)fortargetapplications Pb-...

Brand Name:REASUNOS

Place of Origin:Guangdong, CN

Ultra Small Package Superjunction Power MOSFET with Large EMI Margin *, *::before, *::after {box-sizing: border-box; } * {margin: 0; } html, body {height: 100%; } body {line-height: 1.5; -webkit-font-smoothing: antialiased; } img, picture, video, canvas, ...

Place of Origin:US

Brand Name:Original

Model Number:IRFP4710PBF, IRFP460PBF

...Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 72A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 14 mOhm @ 45A, 10V Vgs(th) (Max) @ Id 5.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 170nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 6160pF @ 25V Power...

Brand Name:JUYI

Model Number:JY13M

Place of Origin:China

... MOSFETs may be used in H-bridge, Inverters and other applications. FEATURES Device VBR(DSS) RDS(ON) MAX TJ=25ºC Package N-Channel 40V <30mΩ@VGS=10V,ID=12A TO252-4L <40mΩ@VGS=4.5V,ID=8A P-Channel -40V <45mΩ@VGS=-10V,ID=