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All pic16c74a 20 p mosfet wholesalers & pic16c74a 20 p mosfet manufacturers come from members. We doesn't provide pic16c74a 20 p mosfet products or service, please contact them directly and verify their companies info carefully.
| Total 73 products from pic16c74a 20 p mosfet Manufactures & Suppliers |
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Place of Origin:Original PIC16C74A-20/P Specifications Part Status Not For New Designs Core Processor PIC Core Size 8-Bit Speed 20MHz Connectivity I²C, SPI, UART/USART Peripherals Brown-out Detect/Reset, POR, PWM, WDT Number of I/O 33 Program Memory Size 7KB (4K x 14) Program ... |
KZ TECHNOLOGY (HONGKONG) LIMITED
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Brand Name:MICROCHIP Model Number:PIC16C74A-20/P Place of Origin:Original New and Original Integrated Circuits IC Chips Electronic Components [Who are we?] Shenzhen QINGFENGYUAN Technology Co., Ltd established in 2013, is a leading distributor of electronic components, including analog, digital, and RF integrated circuits, ... |
ShenZhen QingFengYuan Technology Co.,Ltd.
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Brand Name:AOS Model Number:AOD407 Place of Origin:original ..., Vgs 115mOhm @ 12A, 10V Vgs(th) (Max) @ Id 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs 20 nC @ 10 V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 1185 pF @ |
Shenzhen Sai Collie Technology Co., Ltd.
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Brand Name:Infineon Model Number:IRF3205PbF Place of Origin:Original Factory IRF3205PbF HEXFET® Power MOSFET 55V 98A TO-220 MOSFET Transistors Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined... |
Shenzhen ATFU Electronics Technology ltd
Guangdong |
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Brand Name:ON Semiconductor Model Number:FDMC510P Place of Origin:CHINA FDMC510P P-Channel 20V POWER MOSFET 2.3W 41W Surface Mount 8-MLP General Description This P-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been optimized for RDS(ON), switching performance and ruggedness... |
Shenzhen Koben Electronics Co., Ltd.
Guangdong |
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Brand Name:ONSEMI Model Number:NTF3055L108T1G Place of Origin:Original NTF3055L108T1G Power MOSFET 3.0 A, 60 V linear power mosfet trench power mosfet Features • Pb−Free Packages are Available Applications • Power Supplies • Converters • Power Motor Controls • Bridge Circuits Power MOSFET 3.0 A, 60 V, Logic Level, N−Channel ... |
Anterwell Technology Ltd.
Guangdong |
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Brand Name:VISHAY Model Number:SUD50P06-15L-E3 Place of Origin:Original Manufacturer P-CH INTEGRATED CIRCUIT IC CHIP SUD50P06-15L-E3 TO252 TRENCH FET SERIES Goods Condition: Brand New Part Status: Active Lead Free / Rohs: Complaint Function: Mosfet Mounting Type: Surface Mount Package: TO-252 High Light: n channel mosfet transistor , n ... |
Shenzhen Huahao Gaosheng Technology Co., Ltd
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Brand Name:Hua Xuan Yang Model Number:AP7H03DF Place of Origin:ShenZhen China OEM High Voltage Mosfet Transistor / AP10H03DF Uhf Power Transistor High Voltage Mosfet Transistor Description: The AP10H03DF is the highest performance trench N-ch MOSFETs with extreme high cell density, which provide excellent RDSON and gate charge for ... |
Shenzhen Hua Xuan Yang Electronics Co.,Ltd
Guangdong |
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Brand Name:ON Model Number:2N7002LT1G Place of Origin:CN ...MOSFETs have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance. Its maximum power dissipation is 300 mW. The maximum Drain Source Voltage of the product is 60 V and Gate Source Voltage is ±20 V. This MOSFET... |
Sunbeam Electronics (Hong Kong) Limited
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Brand Name:Infineon Technologies Model Number:BSC020N03MSG Place of Origin:USA ...MOSFET N-Ch 30V 100A TDSON-8 OptiMOS 3M Manufacturer: Infineon Product Category: MOSFET RoHS: Details Technology: Si Mounting Style: SMD/SMT Package / Case: TDSON-8 Transistor Polarity: N-Channel Number of Channels: 1 Channel Vds - Drain-Source Breakdown Voltage: 30 V Id - Continuous Drain Current: 25 A Rds On - Drain-Source Resistance: 1.7 mOhms Vgs - Gate-Source Voltage: - 20 V, + 20... |
Wisdtech Technology Co.,Limited
Guangdong |
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Brand Name:NXP Model Number:BUK7K6R2-40EX Place of Origin:NXP ... 5.8 MOhms LED Driver IC Chip Dual N Channel 40V Mosfet BUK7K6R2-40EX MOSFET Dual N-channel 40V Mosfet LFPAK-33-8 SMD/SMT 5.8 mOhms- 20 V, + 20 V Manufacturer: Nexperia Product Category: MOSFET RoHS: Details Technology: Si Mounting Style: SMD/SMT Package... |
QIN XIN (HONG KONG) ELECTRONIC TECHNOLOGY CO.,LIMITED
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Brand Name:Lingxun Model Number:LG50N10AP Place of Origin:China ...MOSFET for Improved System Efficiency and Consumption LG50N10AP Part Number Package Die Channel ID (A) VDSS (V) VGSS (V) VGS(th)(V) RDS(ON) 10V(mΩ) RDS(ON) 4.5V(mΩ) Qg (nC) Ciss (pF) Min. Min. Min. Max. TYP MAX TYP MAX Typ Typ LG50N10AP TO-220C 1 N 50 100 ±20 1.2 2.2 14 20 Product Description: The TO-220C package size of this MOSFET... |
Guangdong Lingxun Microelectronics Co., Ltd
Guangdong |
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Model Number:AO3400 Brand Name:Original Place of Origin:US Product Description Product Detail Packaging Tape & Reel (TR) Part Status Preliminary FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 5.8A (Ta) Drive Voltage (Max Rds On, Min Rds... |
Shenzhen Quanyuantong Electronics Co., Ltd.
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Brand Name:INFINEON Model Number:IRFP4468PBF ...MOSFET N-CH 100V 195A TO247AC Manufacturer: Infineon Product Category: MOSFET RoHS: Details Technology: Si Mounting Style: Through Hole Package / Case: TO-247-3 Transistor Polarity: N-Channel Number of Channels: 1 Channel Vds - Drain-Source Breakdown Voltage: 100 V Id - Continuous Drain Current: 290 A Rds On - Drain-Source Resistance: 2 mOhms Vgs - Gate-Source Voltage: - 20 V, + 20... |
HK INTERRA TECHNOLOGY LIMITED
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Brand Name:original Model Number:SI4840BDY-T1-GE3 Place of Origin:original ...: 40 V Id - Continuous Drain Current: 19 A Rds On - Drain-Source Resistance: 9 mOhms Vgs - Gate-Source Voltage: - 20 V, + 20 V |
Walton Electronics Co., Ltd.
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Brand Name:Huixin Model Number:BC2301 Place of Origin:China ... ratings (Ta=25℃ unless otherwise noted) Parameter Symbol Value Unit Drain-Source Voltage VDS -20 V Gate-Source Voltage VGS ±8 V Continuous Drain Current ID -2.3 A Pulsed Drain Current IDM -10 A Continuous Source-... |
Guangdong Huixin Electronics Technology Co., Ltd.
Guangdong |
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Brand Name:Original Factory Model Number:MSC040SMA120B Place of Origin:CN ... due to low internal gate resistance. Specification Of MSC040SMA120B Part Number MSC040SMA120B Gate Charge (Qg) (Max) @ Vgs 137 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds 1990 pF @ 1000 V Power Dissipation (Max) 323W (Tc) Benefits Of |
ShenZhen Mingjiada Electronics Co.,Ltd.
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Brand Name:Original Model Number:IRLML6244TRPBF Place of Origin:Original MOSFET IRLML6244TRPBF Chips Diode Transistor Integrated Circuits PRODUCT DESCRIPTION MOSFET MOSFT 20V 6.3A 21mOhm 2.5V cpbl PRODUCT PROPERTIES Manufacturer: Infineon Product Category: MOSFET Technology: Si Mounting Style: SMD/SMT Package / Case: SOT-23-3 Transistor Polarity: N-Channel Number of Channels: 1 Channel Vds - Drain-Source Breakdown Voltage: 20... |
Hong Kong Jia Li Xin Technology Limited
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Brand Name:SAVANTIC Model Number:TIP35C Place of Origin:Original ...switching power mosfet low power mosfet STOCK LIST HT7610B 2460 HOLTEK 16+ SOP/DIP 74AHC00PW 7500 15+ TSSOP IRL540NPBF 1800 IR 12+ TO-220 LM5001MAX 2945 NSC 14+ SOP-8 MBM29LV650UE-90PFTN 5566 FUJITSU 14+ TSOP BTA54C 10000 15+ SOT-23 PIC16F877-20/L 4863 ... |
ChongMing Group (HK) Int'l Co., Ltd
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Place of Origin:ShenZhen China Brand Name:OTOMO Model Number:8205A ...23-6L Plastic-Encapsulate MOSFETS Dual N-Channel MOSFET General Description VDSS= V ID= 6.0 A z 20 G1 6 D1,D2 5 G2 4 z RDS(on) < Ω@V = 4.5V 25m GS z RDS(on) < Ω@V = 2.5V 32m GS 1 2 3 S1 D1,D2 S2 FEATURE z TrenchFET Power MOSFET z Excellent RDS(on) z Low ... |
Beijing Silk Road Enterprise Management Services Co.,LTD
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