power discrete devices sj mos

Brand Name:Lingxun

Place of Origin:China

Power Discrete Devices Super Junction MOSFET Low On Resistance SJ MOS For Lighting Product Description: One of the key advantages of the Super Junction MOSFET is its large EMI margin, making it an ideal choice for applications where ...

Place of Origin:CN

Brand Name:Original Factory

Model Number:DDB6U180N22R

Automotive IGBT Modules DDB6U180N22R Discrete Device Low Power IGBT Modules [MJD Advantage] + 15 years experience for electronic components + Secure Ordering + Excellent Feedback + Delivery Date Guaranteed + 100% Low Price Guaranteed + Export to 108 ...

Brand Name:Infineon Technoctifier Ilogies/International ReOR

Model Number:IHW30N160R2FKSA1

Product Description IHW30N160R2 IGBTs Transistors H30R1602 Soft Switching Series Power Semiconductors IC IHW30N160R2FKSA1 Soft Switching Series Applications: • Inductive Cooking • Soft Switching Applications Description: TrenchStop® Reverse Conducting (RC...

Brand Name:REASUNOS

Place of Origin:Guangdong, CN

Ultra Small Internal Resistance Super Junction MOSFET/SJ MOSTET Power Discrete Devices *, *::before, *::after {box-sizing: border-box; } * {margin: 0; } html, body {height: 100%; } body {line-height: 1.5; -webkit-font-smoothing: ...

Brand Name:Original Factory

Model Number:IPT019N08N5ATMA1

Place of Origin:China

...Discrete Component Automotive Grad IPT019N08N5ATMA1 MOS 247A 019N08N5 Product Description IPT019N08N5ATMA1 device is also ideal for battery-powered applications (BPA) and battery management systems (BMS). N-channel, enhancement-mode, Logic Level devices ...

Brand Name:Microchip

Model Number:APT30M85BVRG

Place of Origin:USA

Discrete Semiconductors APT30M85BVRG TO-247-3 MOSFET Product Description: Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS...

Brand Name:PRM

Model Number:Mo circles

Place of Origin:China

...) x thickness(0.1-35)mm Density:10.2g/cm3 Purity:99.95%.99.97% meterial:Mo1,TZM,Mo-La Surface: black,C.C,bright,polished Standard: ASTMB 386 2. Chemical Content of Molybdenum Circles For Semiconductor and Electric Vacuum Devices: Product Name

Brand Name:INFINEON

Model Number:IRFP3306PBF

IRFP3306PBF TO-247 MOS FET 60V 110A High Power and High Current PRODUCT DESCRIPTION Part number IRFP3306PBF is manufactured by INFINEON and distributed by Stjk. As one of the leading distributors of electronic products, we carry many electronic components...

Brand Name:ZMSH

Model Number:Silicon Carbide Wafer

Place of Origin:Shanghai China

...Type For MOS Device Dia 0.4mm Product introduction The 4H n-type Silicon Carbide (SiC) single crystal substrate is a critical semiconductor material widely utilized in power electronic devices, radiofrequency (RF) devices, and optoelectronic devices. This ...

Brand Name:Hua Xuan Yang

Model Number:G045P03LQ1C2

Place of Origin:ShenZhen China

...Mos Field Effect Transistor ,High Power Transistor -30V/-80A N Channel Mos Field Effect Transistor Description -30V/-80A R DS(ON) = 3.8 mΩ (typ.) @V GS = -10V R DS(ON) = 6.2 mΩ (typ.) @V GS = -4.5V 100% Avalanche Tested Reliable and Rugged Halogen- Free Devices Available N Channel Mos Field Effect Transistor Applications Switching Application Power...

Brand Name:Hua Xuan Yang

Model Number:G045P03LQ1C2

Place of Origin:ShenZhen China

...Mos Field Effect Transistor ,High Power Transistor -30V/-80A N Channel Mos Field Effect Transistor Description -30V/-80A R DS(ON) = 3.8 mΩ (typ.) @V GS = -10V R DS(ON) = 6.2 mΩ (typ.) @V GS = -4.5V 100% Avalanche Tested Reliable and Rugged Halogen- Free Devices Available N Channel Mos Field Effect Transistor Applications Switching Application Power...

Brand Name:MOLEX

Model Number:2137192081

Place of Origin:USA

...Discrete Semiconductor is one of the most popular electronic components for a variety of applications. It includes a wide range of products, such as rectifiers, diodes, SC-63 and SMA transistors, MOSFETs and other devices. These devices can be used in electrical power systems, automotive, consumer electronics, industrial and medical applications. Discrete Semiconductor offers a wide selection of power...

Brand Name:GE Fanuc

Model Number:IC200MDl240

Place of Origin:USA

... from AC input devices and return the current on the common. Input devices are connected between the input terminals and common terminals. Discrete Input Modules IC200MDL140, IC200MDL141, BXIOIA8120 and BXIOIA8240 provide one group of 8 discrete inputs.

Brand Name:Songshun Harness

Model Number:SS-DY001

Place of Origin:China

...-in AC adapter It also can be used as power cable for any devices with prong male connector Fits most brands computer, high safety, ideal replacement for original cables. Cable&Wire : H05VV-F,H03VV-F, SJT,SJTW,SJ,SJW,or Other/ customized Conductor Size :

Model Number:15N10

Place of Origin:Guangdong, China

Brand Name:KAIGENG

15N10 TO-252 Electronic Components Diodes Engine Spot MOS FET N-Channel New Original 15N10 #detail_decorate_root .magic-0{border-bottom-style:solid;border-bottom-color:#53647a;font-family:Roboto;font-size:24px;color:#53647a;font-style:normal;border-bottom-...

Place of Origin:MALAYSIA

Brand Name:FSL

Model Number:MRF136

MRF136 is a N-CHANNEL MOS BROADBAND RF POWER FETs. Part NO: MRF136 Brand: FSL Date Code: 120+ Quality Warranty: 3 Months Mounting Type: Screws Overview Mega Source Electronic Co., LTD specializes in High frequency microwave devices: These products are ...

Brand Name:General Electric

Model Number:IC200MDL632

Place of Origin:United States

... discrete remote inputs. These inputs can be either positive logic inputs that receive power from input devices or negative-logic inputs that receive power from the return and return it to the input device. The input devices connect the input terminals and

Brand Name:original

Model Number:NCV8402ADDR2G

Place of Origin:China

...Power management IC SOIC-8_150mil PMIC LDO IC Chip NCV8402ADDR2G Product Description: NCV8402ADDR2G Dual MOSFET, Dual N Channel, 2A, 42 V, 0.165 OHM, 10 V, 1.8 V New power switch/driver 1:1 N-channel 2A 8-SOIC Current Limit SW 1-IN 1-OUT to 5.4A Automotive 8-PIN SOIC N T/R CV8402D/AD is a dual protected Low−Side Smart Discrete device...

Brand Name:Texas Instruments

Model Number:LM311DR

Place of Origin:CHINA

...MOS Open-Collector Open-Emitter TTL 8-SOIC Description: The LM111, LM211, and LM311 are single high-speed voltage comparators. These devices are designed tooperate from a wide range of power-supply voltages, including±15-V supplies for operational amplifiers and5-V supplies for logic systems. The output levels are compatible with most TTL and MOS...