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All sic epitaxial n type substrate wholesalers & sic epitaxial n type substrate manufacturers come from members. We doesn't provide sic epitaxial n type substrate products or service, please contact them directly and verify their companies info carefully.
| Total 11 products from sic epitaxial n type substrate Manufactures & Suppliers |
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Brand Name:ZMSH Model Number:6inch SiC Epitaxial Wafer Place of Origin:CHINA ...6inch SiC epitaxial wafer 6inch SiC Epitaxial Wafer Diameter 150mm N type P type for 5G Communication As a core material for silicon carbide (SiC) power device manufacturing, the 6-inch 4H-SiC epitaxial wafer is based on a 4H-N-type SiC substrate, grown... |
SHANGHAI FAMOUS TRADE CO.,LTD
Shanghai |
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Brand Name:ZMSH Model Number:4 inch Place of Origin:China SiC Epitaxial Wafer Overview 4-inch (100 mm) SiC Epitaxial Wafers continue to play a vital role in the semiconductor market, serving as a highly mature and reliable platform for power electronics and RF device manufacturers worldwide. The 4” wafer size ... |
SHANGHAI FAMOUS TRADE CO.,LTD
Shanghai |
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Brand Name:Ruideer Model Number:Customizable Place of Origin:China ... of the semiconductor epitaxial susceptor and etching ring. Epitaxial base, a high-purity graphite disk, with a circular groove on it to fix the wafer substrate.After placing them in the furnace, a layer of crystal film will grow on the surface of the |
Zhuzhou Ruideer Metallurgy Equipment Manufacturing Co.,Ltd
Hunan |
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Brand Name:CAEC Place of Origin:Henan, China ...Substrate Application The grinding wheels for LED substrate are mainly used for back thinning of 2”, 4” and 6”LED epitaxial wafers. They can be used steadily on the Japanese, Korean and Taiwanese grinders with high performance. Workpiece: sapphire epitaxial wafer, SiC substrate epitaxial wafer, Si substrate epitaxial wafer. Material of workpiece: Synthetic sapphire, SiC... |
China Abrasives Industry Hainan Corporation
Hainan |
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Country/Region:china SiC Substrate Wafer Manufacturer 4 inch P Grade SiC Wafer Factory Homray Material Technology offers silicon carbide SiC n-type and p-tpye epitaxial wafer. SiC epi wafer is mainly used for Schottky diodes, metal-oxiHomray Material Technology offersthe best price on the market for high quality SiC wafers and silicon carbide epitaxial wafers. The major products are 2 inch, 3 inch, 4 inch 6 inch silicon carbide substrate... |
Homray Material Technology
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Brand Name:PAM-XIAMEN Place of Origin:China ...SiC and 4H SiC in different quality grades for researcher and industry manufacturers. We has developed SiC crystal growth technology and SiC crystal wafer processing technology,established a production line to manufacturer SiC substrate,Which is applied in GaN epitaxy... |
XIAMEN POWERWAY ADVANCED MATERIAL CO., LTD.
Fujian |
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Brand Name:Crystro Model Number:3inch SGGG/GGG Place of Origin:China Product Description: The Single Crystal Substrates offered in our product line are an essential component for various applications in the field of magnetic refrigeration, epitaxial film substrates, and substrate materials for YIG. These substrates are ... |
ANHUI CRYSTRO CRYSTAL MATERIALS Co., Ltd.
Anhui |
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Brand Name:HT Model Number:HT-BGW Place of Origin:China ... selection of back grinding wheels. This particular grinding tool comes in two types: a silicon wafer back grinding wheel and an LED substrate back grinding wheel. Both of them can be used on different grinding machines made in Europe,America,Japan, and |
Zhengzhou Hongtuo Superabrasive Products Co., Ltd.
Henan |
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Brand Name:Original Factory Model Number:A2U12M12W2-F2 Place of Origin:CN ... that integrates the advanced silicon carbide Power MOSFET technology. This A2U12M12W2-F2 module leverages the innovative properties of the wide-bandgap SiC material and a high-thermal-performance substrate. The result is exceptionally low on |
ShenZhen Mingjiada Electronics Co.,Ltd.
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Brand Name:BonTek Model Number:SAP Place of Origin:China ...Wafer is a type of semiconductor material made of sapphire, which has excellent optical, mechanical, and chemical properties. It is commonly used as the epitaxial layer for GaN-based materials and devices, and is also widely applied in other electronic and |
Hangzhou Freqcontrol Electronic Technology Ltd.
Shanghai |
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Brand Name:Uchi Model Number:MBR20100 Place of Origin:Dongguan China ... substrate, on which an N-epitaxial layer with arsenic as a dopant is formed. The anode uses materials such as molybdenum or aluminum to make the barrier layer. Silicon dioxide (SiO2) is ... |
Guangdong Uchi Electronics Co.,Ltd
Guangdong |