silicon carbide mosfet to 247ac

Brand Name:REASUNOS

Place of Origin:Guangdong, CN

... power and high frequency performance. Their main advantages include their reliability and stability, which is based on the national military standard production line. Silicon Carbide MOSFETs are

Brand Name:Original Factory

Model Number:MSCSM70TLM10C3AG

Place of Origin:CN

... (Tc), Through Hole Module. Specification Of MSCSM70TLM10C3AG Part Number MSCSM70TLM10C3AG Technology Silicon Carbide (SiC) Configuration 4 N-Channel Drain to Source Voltage (Vdss) 700V Current - Continuous Drain (Id) @ 25°C 241A (Tc) ...

Brand Name:Ruideer

Model Number:Customizable

Place of Origin:China

Silicon Carbide as a Semiconductor Semiconductor Transistors And MOSFETs Produced By Silicon Carbide Sintering Furnace Nearly every electronic item you encounter on a day-to-day basis contains semiconductors. They are found in everything from your ...

Brand Name:ZHENAN

Model Number:Silicon Carbide

Place of Origin:China

...Silicon Carbide Is Used as a Refractory in Ceramic Production Sic Description: Why can silicon carbide withstand such high voltages? Power devices, especially MOSFETs, must be able to handle extremely high voltages. SiC can achieve very high breakdown voltages, from 600V to several thousand volts, due to the dielectric breakdown strength of the electric field being about ten times higher than that of silicon...

Brand Name:zmkj

Model Number:4inch--semi high purity

Place of Origin:china

...Silicon Carbide Substrates,high purity 4inch SiC substrates ,4inch Silicon Carbide substrates for semiconductor, 4inch SiC substrates ,Silicon Carbide substrates for semconductor ,sic single crystal wafers ,sic ingots for gem​ Application areas 1 high frequency and high power electronic devices Schottky diodes, JFET, BJT, PiN, diodes, IGBT, MOSFET...

Brand Name:Mitsubishi

Model Number:RD06HVF1

Place of Origin:CN

RD06HVF1 RF POWER MOSFET Silicon Transistor 175MHz 6W for amplifiers applications Description of RD06HVF1 RD06HVF1 is a MOS FET type transistor specifically designed for VHF RF power amplifiers applications FEATURES of RD06HVF1 High power gain: Pout>6W, Gp...

Model Number:C3M0016120K

Place of Origin:original

Brand Name:original

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Brand Name:ZMSH

Model Number:4H Semi-insulating SiC substarte/wafer

Place of Origin:China

6H-N Semi-insulating SiC substarte/wafer for MOSFETs,JFETs BJTs,high resistivity wide bandgap Semi-insulating SiC substarte/wafer's abstract Semi-insulating silicon carbide (SiC) substrates/wafers have emerged as crucial materials in the realm of advanced ...

Brand Name:Infineon Technologies

Model Number:IMZ120R090M1H

Place of Origin:United States

... SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss) 1200 V Current - Continuous Drain (Id) @ 25°C 26A (Tc) Drive Voltage (Max ...

Place of Origin:Original

CAS325M12HM2 Specifications Part Status Active FET Type 2 N-Channel (Half Bridge) FET Feature Silicon Carbide (SiC) Drain to Source Voltage (Vdss) 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C 444A (Tc) Rds On (Max) @ Id, Vgs 4.3 mOhm @ 400A, 20V ...

Categories:Onsemi Ic

Country/Region:china

...°C to 175°C Package: TO-247-3 The FSB70450 is a silicon carbide (SiC) P-channel MOSFET from Infineon Technologies. Key Features: Industry-leading 1200V blocking voltage Provides efficient switching of up to 45A loads Ultra-...

Brand Name:Infineon Technologies

Model Number:IMBG120R350M1HXTMA1

... Carbide (SiC) MOSFET modules that offer good levels of efficiency and system flexibility. These modules come with Near Threshold Circuits (NTC) and PressFIT contact technology. The ...