silicon carbide power mosfet 650v

Brand Name:REASUNOS

Place of Origin:Guangdong, CN

High Power Silicon Carbide MOSFET for Solar Inverter Application *, *::before, *::after {box-sizing: border-box; } * {margin: 0; } html, body {height: 100%; } body {line-height: 1.5; -webkit-font-smoothing: antialiased; } img, picture, video, canvas, svg {...

Brand Name:Original Factory

Model Number:SCTW90N65G2V

Place of Origin:CN

SCTW90N65G2V N-Channel 650V 90A 390W Silicon carbide Power MOSFET Transistors Product Description Of SCTW90N65G2V SCTW90N65G2V is Silicon carbide Power MOSFET 650 V, 119 A, 18 mΩ in an TO-247-3 package. Specification Of SCTW90N65G2V Part Number ...

Brand Name:SANYO

Model Number:2SD1625

Place of Origin:Philippines

Silicon RF Power Mosfet Transistors IC 2SD1625 PNP / NPN Epitaxial Planar 2SD1625 Driver Applications PNP/NPN Epitaxial Planar Silicon Transistors IC Applications Motor drivers, printer hammer drivers, relay dreiver,voltage regulator control Features High ...

Model Number:C3M0016120K

Place of Origin:original

Brand Name:original

#detail_decorate_root .magic-0{margin-bottom:10px;overflow:hidden}#detail_decorate_root .magic-1{border-bottom-style:solid;border-bottom-color:#53647a;font-family:Roboto;font-size:24px;color:#53647a;font-style:normal;border-bottom-width:2px;padding-top:8px...

Model Number:2SC5200

Place of Origin:original factory

2SC5200/FJL4315 NPN Epitaxial Silicon Transistor Applications • High-Fidelity Audio Output Amplifier • General Purpose Power Amplifier Features • High Current Capability: IC = 15A. • High Power Dissipation : 150watts. • High Frequency : 30MHz. • High ...

Model Number:D2010UK

Place of Origin:Malaysia

Brand Name:KAIGENG

D2010UK N/A Electronic Components IC MCU Microcontroller Integrated Circuits D2010UK #detail_decorate_root .magic-0{border-bottom-style:solid;border-bottom-color:#53647a;font-family:Roboto;font-size:24px;color:#53647a;font-style:normal;border-bottom-width:...

Brand Name:HT

Model Number:F4N65L TO-220F-3L

Place of Origin:China

...POWER MOSFET 4A 650V Applications In Switching Power Supplies And Adaptors 4A, 650V N-CHANNEL TO-220F-3L POWER MOSFET DESCRIPTION The F4N65L is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in switching power

Brand Name:Ruideer

Model Number:Customizable

Place of Origin:China

... semiconductors. They are found in everything from your smartphone or tablet, to even higher power applications such as server farms and solar arrays. More specifically, semiconductors are a key part of the components that make up electronic systems,

Place of Origin:China

Brand Name:ONSEMI

Model Number:NVH4L027N65S3F

High Power MOSFET NVH4L027N65S3F SUPERFET III MOSFET 650V 27mohm [Who we are?] Sunbeam Electronics (Hong Kong) Co. Ltd is focus on semi-conductors sourcing and electronic components sale and service for clients over 10 years, specialize in selling the new...

Brand Name:ZHENAN

Model Number:Silicon Carbide

Place of Origin:China

...Silicon Carbide Is Used as a Refractory in Ceramic Production Sic Description: Why can silicon carbide withstand such high voltages? Power devices, especially MOSFETs, must be able to handle extremely high voltages. SiC can achieve very high breakdown voltages, from 600V to several thousand volts, due to the dielectric breakdown strength of the electric field being about ten times higher than that of silicon...

Brand Name:ZMSH

Model Number:SiC Powder

Place of Origin:China

...Silicon Carbide (SiC) Powder for Industrial and Ceramic Applications Introduction of Silicon Carbide Power: Silicon carbide powder (SiC) is an abrasive material that is made by heating silicon and carbon together. It is a very hard material, with a Mohs hardness of 9, and is resistant to wear and corrosion. Silicon carbide powder is used in a variety of applications. Silicon carbide...

Brand Name:Huixin

Model Number:H10N65

Place of Origin:China

N Channel High Voltage Mosfet 650V 10A High Accuracy RoHS Compliant TO-220F Applications Adapter & Charger SMPS Standby Power AC-DC Switching Power Supply LED driving power Features Low On Resistance Low Gate Charge Peak Current vs Pulse Width Curve RoHS ...

Brand Name:Original brand

Model Number:NVHL040N65S3F

Place of Origin:Original

... to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET is

Categories:Discrete Semiconductors

Country/Region:china

POWER MOSFET TRANSISTOR APT94N65B2C3G APT94N65B2C3G Microsemi Corporation (now Microchip) MOSFET N-CH 650V 94A T-MAX Product Technical Specifications Category Integrated Circuits (ICs) 　 APT94N65B2C3G POWER MOSFET TRANSISTOR Mfr MICROSEMI/MICROCHIP Series - Package Tube Product Status Obsolete Mounting Type Through Hole Operating Temperature - Supplier Device Package APT94N65B2C3G POWER MOSFET TRANSISTOR Package / Case MOSFET N-CH 650V...

Brand Name:ANNEC

Model Number:customized shape

Silicon Carbide Brick Widely Used In Power Plant Silicon carbide pipes are also known as silicon ceramic pipes, which belong to the refractory pipe family. This kind of pipe is made of clay bonded silicon carbide material, which has good wear resistance, heat resistance, corrosion resistance and high temperature performance. Silicon carbide...

Brand Name:Mitsubishi

Model Number:RD06HVF1

Place of Origin:CN

... applications FEATURES of RD06HVF1 High power gain: Pout>6W, Gp>13dB @Vdd=12.5V,f=175MHz APPLICATION of RD06HVF1 For output stage of high power amplifiers in VHF band mobile radio sets. List Of Other Electronic Components In Stock PART NUMBER MFG/BRAND 　

Brand Name:zmkj

Model Number:4inch--semi high purity

Place of Origin:china

...Silicon Carbide Substrates,high purity 4inch SiC substrates ,4inch Silicon Carbide substrates for semiconductor, 4inch SiC substrates ,Silicon Carbide substrates for semconductor ,sic single crystal wafers ,sic ingots for gem​ Application areas 1 high frequency and high power electronic devices Schottky diodes, JFET, BJT, PiN, diodes, IGBT, MOSFET...

Brand Name:BD

Model Number:1-4inch

Place of Origin:China

..., and chemical resistance. The strength of RBSC is almost 50% greater than that of most nitride bonded silicon carbides. It can be formed into a variety of shapes, including cone and sleeve shapes, as well as more complex engineered pieces designed for

Place of Origin:China

Brand Name:SONGYU

ED Type Silicon Carbide Rod The ED-type products among silicon carbide rods have already become powerful substitutes for thick-end silicon carbide rods. Their advantages are extremely remarkable. The first and foremost is that their end resistances are ...

Place of Origin:China

... product is commonly used in the production of SISIC heat exchangers, which are used in various industries such as chemical, petrochemical, and power generation. Silicon Carbide Ceramics are also widely used in the manufacturing of silicon carbide ceramic