silicon epitaxial transistor

Model Number:BC850B

...silicon epitaxial transistors designed for switching and amplifier applications. Complementary PNP transistors in the BC856 to BC860 series are recommended for paired applications. These transistors are housed in a SOT-23 plastic package. Product Attributes Package Type: SOT-23 Plastic Package Transistor Type: NPN Silicon Epitaxial Transistor Complementary Type: PNP transistors...

Place of Origin:Japan

Brand Name:NEC

Model Number:HR1F3P

On-chip resistor PNP silicon epitaxial transistor HR1F3P NEC SOT-89 FEATURES • Up to 2A high current drives such as IC outputs and actuators available • On-chip bias ...

Brand Name:Huixin

Model Number:S8550 SOT-89

Place of Origin:China

S8550 SOT-89 0.5A PNP Silicon Epitaxial Planar Transistor S8550 SOT-89 0.5A SMD Transistor PNP Silicon Epitaxial Planar Transistor S8550 SOT-89 Datasheet.pdf FEATURES For switching and amplifier applications. Especially suitable for AF-driver stages and ...

Brand Name:NEC

Model Number:2SB1261

Place of Origin:CHINA

2SB1261 General Purpose Rectifier Diode PNP Silicon Epitaxial Transistors DESCRIPTION ·Low Collector Saturation Voltage ·High Power Dissipation- : PC= 10W(Max)@TC=25℃ ·Complement to Type ...

Brand Name:Anterwell

Model Number:2SC5707

Place of Origin:original factory

PNP / NPN Epitaxial Planar silicon power transistors 2SC5707 for High Current Switching Applications • DC / DC converter, relay drivers, lamp drivers, motor drivers, flash ...

Brand Name:NEC

Model Number:2SB1261

Place of Origin:CHINA

... Transistors DESCRIPTION ·Low Collector Saturation Voltage ·High Power Dissipation- : PC= 10W(Max)@TC=25℃ ·Complement to Type ...

Brand Name:UCHI

Model Number:BAV99W BAV56W

Place of Origin:Dongguan China

SOT-323 BAV99W/BAV56W NPN Silicon Epitaxial Planar Transistor A7 FEATURES - Fast switching speed. - High conductance - Connected in series - Surface mount package ideally suited for automatic ...

Brand Name:ROHM Semiconductor

Model Number:1SS26(C3)

Place of Origin:CHINA

1SS226 Switching Diodes Silicon Epitaxial Planar for Ultra-High-Speed Switching 1. Applications • Ultra-High-Speed Switching 2. Features (1) AEC-Q101 qualified Feature ...

Brand Name:Original

Model Number:2SC3133

2SC3133 NPN Transistor - High-Performance and Versatile Solution for Electronics Enthusiasts Discover the Key Features and Benefits of the 2SC3133 NPN Transistor The 2SC3133 transistor is a top-of-the-line solution for electronics enthusiasts who require ...

Model Number:LL4148

Brand Name:DEC

Place of Origin:Jiangxi, China

... per MIL-STD-202, Method 208 Polarity: Cathode indicated with color band Weight: 0.05 grams (approx) Features Silicon epitaxial planar diode High speed switching diode 500mW power dissipation

Place of Origin:ShenZhen China

Brand Name:Hua Xuan Yang

Model Number:ZMM1~ZMM75

ZMM1~ZMM75 Silicon Epitaxial Planar Zener Diodes Product Description MiniMELF case especially for automatic insertion.The Zener voltages are graded according to the international ...

Brand Name:XUYANG

Model Number:1SS83

Place of Origin:China

Silicon Epitaxial Planar For High Voltage Switching Diode 1SS83 Features • High Reverse Voltage(VR = 250V) • High reliability with glass ...

Brand Name:ROHM Semiconductor

Model Number:1SS26(C3)

Product Description 1SS226 Switching Diodes Silicon Epitaxial Planar For Ultra High Speed Switching 1. Applications • Ultra-High-Speed Switching 2. Features (1) AEC-Q101 qualified Feature ...

Place of Origin:US

Brand Name:Original

Model Number:2SC2383

Product Description Packaging Bulk Part Status Obsolete Transistor Type NPN Current - Collector (Ic) (Max) 1A Voltage - Collector Emitter Breakdown (Max) 160V Vce Saturation (Max) @ Ib, Ic 1.5V @ 50mA, 500mA Current - Collector Cutoff (Max) 1µA (ICBO) DC ...

Categories:RF Transistors

Country/Region:china

MJ13333 SWITCHMODE Series 20 AMPERE NPN Silicon Power Transistor 400- 500 VOLTS 175 WATTS Category Transistor Mfr Motololar Series - Part Status - Mounting Type - The MJ13333 transistor is designed for high voltage, high–speed, power switching in ...

Place of Origin:ShenZhen China

Brand Name:OTOMO

Model Number:A42

SOT-89-3L Plastic-Encapsulate Transistors A42 TRANSISTOR (NPN) FEATURE Low Collector-Emitter Saturation Voltage High Breakdown Voltage Marking :D965A MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage ...

Brand Name:Original Factory

Model Number:MSC060SMA070B4

Place of Origin:CN

...Transistors in a TO-247 4-lead package with a source sense. Specification Of MSC060SMA070B4 Part Number: MSC060SMA070B4 Technology: SiC Mounting Style: Through Hole Package / Case: TO-247-4 Transistor Polarity: N-Channel Number of Channels: 1 Channel Vds -

Brand Name:Mitsubishi

Model Number:RD06HVF1

Place of Origin:CN

RD06HVF1 RF POWER MOSFET Silicon Transistor 175MHz 6W for amplifiers applications Description of RD06HVF1 RD06HVF1 is a MOS FET type transistor specifically designed for VHF RF power amplifiers applications FEATURES of RD06HVF1 High power gain: Pout>6W, Gp...

Brand Name:ON

Model Number:MJE15028G

Place of Origin:original

MJE15028G Chipscomponent Electronic Components IC Chips MJE15028G High Power MOSFET electronic chip brand new original TO-220(TO-220-3) Bipolar transistor - Bipolar junction transistor (BJT) 8A 120V 50W NPN Category Integrated Circuits (ICs) Mfr Analog ...

Brand Name:Original

Model Number:MMBT5401

...Epitaxial Silicon Transistor MMBT5401 2L SOT-23 3000 pcs BJT PNP Transistor MMBT5401PNP GENERAL PURPOSE SWITCHING TRANSISTOR Voltage -150Volts Power 300mWatts MECHANICAL DATA Case: SOT-23, Plastic Terminals: Solderable per MIL-STD-750, method 2026 Approx. Weight: 0.008gram Marking: 2L FEATURES *PNP epitaxial silicon...