solid state high power rf amplifier

Brand Name:SWT

Model Number:SW-PA-01254000-33C

Place of Origin:China

...Solid State High Power RF Amplifier 0125-4000MHz 2W 33dBm Microwave Amplifier for Military Communication The 0125-4000MHz 2W (33dBm) Microwave RF Power Amplifier is designed to amplify signals within the frequency range of 0125MHz to 4000MHz. Frequency Range: This power amplifier covers a wide frequency range from 0125MHz to 4000MHz, making it suitable for various microwave applications. Power Output: The amplifier...

Brand Name:MXT

Model Number:PA1550T1650M 10W-12V

Place of Origin:SHENZHEN,CHINA

...Solid RF Power Module 10w GPS Band 1550MHz 1650MHz SMA Conncetor DC 12V Power Amplifier Product Description: solid-state microwave source, can provide 10W continuous wave power, can realize output power adjustment of 0.1W~10W, high frequency stability, power amplifier built-in high-power circulator and load , suitable for loads of various standing wave ratios; has a complete protection circuit to ensure the reliable operation of the power

Brand Name:Kimpok Technology / OEM

Model Number:KP-LAM800-50W

Place of Origin:China

500Mhz - 2400MHz High Power RF Power Amplifier Smaller Size LAN 28V DC ​Features: The integrated Noise source and RF PA in one house, smaller size and only connect DC28,6A to it Prevent the interference of high radiated RF power to monitoring-unit and PA...

Brand Name:Ding Shen

Model Number:DS-LAM800-50W

Place of Origin:China

500Mhz - 2400MHz High Power RF Power Amplifier Smaller Size LAN 28V DC ​Features: The integrated Noise source and RF PA in one house, smaller size and only connect DC28,6A to it Prevent the interference of high radiated RF power to monitoring-unit and PA...

Brand Name:XCE

Model Number:XCE BB50

Place of Origin:China

Double Sided High Frequency Pcb With RF Microwave For High Power RF Amplifier Quick Detail : Type Pcb Material Rogers Layer 2 Size 6*6cm Permittivity 2.2 Color Green Surface Finish Immersion Tin Parameter: Model Parameter thickness(mm) Permittivity(ER) F4B...

Brand Name:NENGXUN

Model Number:NX-PA5.8GHz

... power output and anti-interference performance, it meets the demanding requirements in industrial, communication and military fields. Core Performance Highlights Precise ...

Brand Name:VBE

Model Number:VBPA14000M

Place of Origin:China

...RF Power Amplifier PA , RF Power Amplifier Module VBE RF Power Amplifier Module Introdutions: VBE solutions of RF modules including radio frequency signal source,radio frequency power amplifier(PA),low noise amplifier(LNA), Radio Frequency outdoor unit(ODU) and customized radio frequency module solution,the frequency band cover P-wave band,L-wave band,S-wave band,Ku-wave band and Ka-wave band and so on,broadly applying in high...

Brand Name:flysafe

Place of Origin:Guangdong, China

High-power 5.2 GHz 30W RF Power Amplifier Module Product Parameters Frequency 5.2 GHz Test voltage 28 V Current 2.8 A Output 30 W Gain 45 dB Output stability 1 dB Connector SMA / Female Output connector VSWR ≤1.30 (No power and VNA test) Power supply wire Red+Black+Enable wire Enable Control High...

Brand Name:ATNJ

Model Number:AT-20-700-20W

Place of Origin:China

...power amplifier (UWPA) is a power amplifier with ultra wide bandwidth designed to amplify signals across a wide range of frequencies while maintaining high efficiency, linearity, and low distortion. It was specifically designed for RF jamming, but has also

Brand Name:ZTZG

Model Number:300kw

Place of Origin:China

...DSEI 2×61-12B 60A/1200V rapid recovery diode to compose series type invertible circuit. 1.2 The solid state H.F. welder adopts modularization design with more compact structure which makes maintenance and high-power realization much easier. 1.3 It has

Place of Origin:MALAYSIA

Brand Name:MOTOROLA

Model Number:PTFA18100

... Mega Source Electronic Co., LTD specializes in High frequency microwave devices: These products are widely used in micro-cellular amplifier, CATV radio and television transmitters, GSM / CDMA / PHS repeaters, trunk amplifiers, tower mounted amplifiers,

Brand Name:LENOLINK

Model Number:200W RF LOAD with DIN connector

Place of Origin:CHINA

... , outsider , good waterproof. 5. Frequency :0-3800G 6. Connector :DIN male Product description 1. Integrated structure design: Filter is milled from one solid piece and has no soldered parts,

Place of Origin:CHINA

Brand Name:EST

Model Number:100W-300MHz

...High Power RF Jamming Module Working Frequency 20MHz~2700MHz Product Description: Our 100W Blocking Power Amplifier Module is a high-performance LTE NR PA Module for communication use. It comes with a working voltage of DC 28V and a working frequency of 20MHz~2700MHz, enabling a maximum working current of ≤10A. This 100W Blocking Power Amplifier Module also provides an output power of 50dBm, and its module size is 200×90×24mm. It is highly

Brand Name:HUANSHUN

Model Number:YGF1504XX

Place of Origin:CHINA

... finishing process; Our Pump Source parts are manufactured by World Leading Semiconductor Company: JDSU who supply us with Multi-Mode High Power Pump Lasers, Double-Clad Synthesizers are supplied by the United States OFS company. The EYDFA device is

Brand Name:Analog Devices Inc.

Model Number:AD9361BBCZ

Place of Origin:Multi-origin

...RF Power Transistor - High Power High Reliability The AD9361BBCZ is a high-power, high-efficiency N-channel RF power transistor designed for use in the 900 MHz ISM band. The device features a wide gate voltage range and excellent thermal stability. It is ideal for applications such as RF power amplifiers, cellular base stations and other wireless communication applications. Features: • High power capability: Pout = 10 W • High

Model Number:YPM5840B

Place of Origin:Jiangsu, China

Brand Name:SZHUASHI

... to 5725-5850MHz signal. This module has the advantages of high average output power, and good in band flatness. Features Frequency Range 5725-5850MHz Operation Voltage 28V Output power 46dBm Power flatness <1dB Packing & Delivery To better ensure the

Brand Name:TX TELSIG

Model Number:YP233433

Place of Origin:China

... InGaP/GaAs HBT process. This amplifier provides a typical gain of 35dB and P1dB power of 33dBm, typical bias condition is 5V at 320mA. The input are internally matched to 50Ω and require a minimum of external matching components to ...

Brand Name:Diodes Incorporated

Model Number:BS816A-1

Place of Origin:USA

...RF Transistors Manufacturer: DIODES Product Category: P-CHANNEL ENHANCEMENT RoHS: Details Mounting Style: - Package / Case: 16NSOP Packaging: Standard Unit Weight: - oz This transistor is suitable for RF power amplifiers in various applications such as wireless communication, broadcasting, and industrial RF equipment. ● P-channel enhancement mode ● DMOS transistor technology ● High power

Place of Origin:Guangdong, China

Brand Name:Creatall

Model Number:CA-3110

TPA3110 2X15W Digital Audio Stere Amplifier Board Module Mini Binaural AMP Controller 100dB DC 8-24V Features: * Amplifier Chip:TPA3110 * Output Power:15W x 2 * Working Voltage: DC 8-18V * Working Current: * Max:3A Static state:8mA * Efficiency:≥90% * SNR:...