sram chip 6 5 ns

Brand Name:ISSI

Model Number:IS61LPS51236A-200B3LI

Place of Origin:CHINA

Product Technical Specifications EU RoHS Compliant ECCN (US) 3A991b.2.a. Part Status Active Automotive No PPAP No Chip Density (bit) 18M Number of Words 512K Number of Bits/Word (bit) 36 Architecture Pipelined Data Rate Architecture SDR Address Bus Width (...

Brand Name:Original Factory

Model Number:S80KS5122GABHI020

Place of Origin:CN

...DRAM) Memory Chip with HYPERBUS™ interface. Specification Of S80KS5122GABHI020 Part Number: S80KS5122GABHI020 Wrapped Burst Lengths: 64 Bytes (32 Clocks) Linear Burst: 64 Mb Technology: PSRAM (Pseudo SRAM) Access Time: 35 Ns Operating Temperature Range -

Brand Name:Maxim Integrated

Model Number:DS1230Y-150+

Place of Origin:Shenzhen, China

DS1230Y-150+ 256kb (32 k x 8) 150 ns Commercial Temp Non-Volatile SRAM - DIP-28 Description : The DS1230 256k Nonvolatile SRAMs are 262,144-bit, fully static, nonvolatile SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium ...

Brand Name:Anterwell

Model Number:A42MX16-PQG100I

Place of Origin:original factory

...Chip ASIC Alternative • 3,000 to 54,000 System Gates • Up to 2.5 kbits Configurable Dual-Port SRAM • Fast Wide-Decode Circuitry • Up to 202 User-Programmable I/O Pins High Performance • 5.6 ns Clock-to-Out • 250 MHz Performance • 5 ns Dual-Port SRAM Access • 100 MHz FIFOs • 7.5 ns...

Model Number:A42MX16-PQG100I

Place of Origin:original factory

...Chip ASIC Alternative • 3,000 to 54,000 System Gates • Up to 2.5 kbits Configurable Dual-Port SRAM • Fast Wide-Decode Circuitry • Up to 202 User-Programmable I/O Pins High Performance • 5.6 ns Clock-to-Out • 250 MHz Performance • 5 ns Dual-Port SRAM Access • 100 MHz FIFOs • 7.5 ns...

Brand Name:Original

Model Number:CY62167EV30LL-45ZXI

Place of Origin:Original

■ TSOP I package configurable as 1M × 16 or 2M × 8 SRAM ■ Very high speed: 45 ns ■ Temperature ranges ❐ Industrial: –40 °C to +85 °C ■ Wide voltage range: 2.20 V to 3.60 V ■ Automatic power-down when deselected ■ CMOS for optimum speed and power ■ Offered...

Brand Name:Renesas Electronics America Inc

Model Number:IDT71V3556SA133BQG

Electronic IC Chip IDT71V3556SA133BQG SRAM - Synchronous, SDR (ZBT) Memory IC 4.5Mbit Parallel 133 MHz 4.2 Ns 165-CABGA PRODUCT DESCRIPTION Part number IDT71V3556SA133BQG is manufactured by Renesas Electronics America Inc and distributed by Stjk. As one ...

Brand Name:CYPRESS

Model Number:CY62137FV18LL-55BVXI

Place of Origin:original

...IC Chip Low Power Memory for High Performance Computing Memory Type Volatile Memory Format SRAM Technology SRAM - Asynchronous Memory Size 2Mbit Memory Organization 128K x 16 Memory Interface Parallel Write Cycle Time - Word, Page 55ns Access Time 55 ns ...

Brand Name:Infineon

Model Number:CY7C1049DV33-10ZSXIT

SRAM 4Mb 10ns 3.3V 512Kx8 Fast Async SRAM Product Attribute Attribute Value Select Attribute Manufacturer: Infineon Product Category: SRAM RoHS: Details Memory Size: 4 Mbit Organization: 512 k x 8 Access Time: 10 ns Maximum Clock Frequency: 100 MHz ...

Place of Origin:PHILIPPINE

Brand Name:Sharp Electrionic Components

Model Number:LH52256CN-70LL

Quick Detail: 256K SRAM Description: The LH52256C is a Static RAM organized as 32,768 × 8 bits which provides low-power standby mode. It is fabricated using silicon-gate CMOS process technology Applications: • 32,768 × 8 bit organization • Access time: 70 ...

Brand Name:Cypress Semiconductor Corp

Model Number:CY7C128A-45PC

Product Details Features • Automatic power-down when deselected • CMOS for optimum speed/power • High speed — 15 ns • Low active power — 660 mW (commercial) — 688 mW (military—20 ns) • Low standby power — 110 mW (20 ns) • TTL-compatible inputs and outputs...

Brand Name:DALLAS

Model Number:DS1220Y-100

Place of Origin:USA

...Chip 16k Nonvolatile SRAM Full Series for DS1220Y-100+120+150+200 IND FEATURES 10 years minimum data retention in the absence of external power Data is automatically protected during power loss Directly replaces 2k x 8 volatile static RAM or EEPROM Unlimited write cycles Low-power CMOS JEDEC standard 24-pin DIP package Read and write access times as fast as 100 ns...

Brand Name:ISSI, Integrated Silicon Solution Inc

Model Number:IS62C256AL-45ULI-TR

IS62C256AL-45ULI-TR MemoryType Volatile MemoryFormat SRAM Technology SRAM - Asynchronous MemorySize 256Kb (32K x 8) MemoryInterface Parallel ClockFrequency - WriteCycleTime-WordPage 45ns AccessTime 45 ns Voltage-Supply 4.5V ~ 5.5V OperatingTemperature -40...

Categories:Memory IC Chip

Country/Region:china

SRAM - Asynchronous Memory IC 1Mbit Parallel 15 ns 32-TSOP II