telecom power super junction mosfet

Brand Name:Lingxun

Place of Origin:China

...Super Junction MOSFET For Telecom Server Power Supplies Product Description: One of the standout features of the Lingxun Super Junction MOSFET is its proprietary new super-junction technology. This technology allows for superior performance in high voltage applications, making it an ideal choice for use in mode power supplies. By utilizing this technology, Lingxun has been able to create a MOSFET...

Brand Name:REASUNOS

Place of Origin:Guangdong, CN

...Super Junction MOSFET is a power discrete device for LED Driver, PFC Circuit, Switching Power Supply, UPS Of Continuous Power Supply System, and New Energy Power Equipment. It is made by Multi-layer Epitaxy Process, which has excellent Anti EMI and Anti Surge Capabilities compared to Trench Process. It features an ultra-low Junction Capacitance and an ultra small package. Therefore, it is the ideal choice for SJ MOSFET, Super

Brand Name:Infineon

Model Number:SPA04N80C3XKSA1

Place of Origin:China

SPA04N80C3XKSA1 Power MOSFET 800V Ultra-High Voltage 4A Current Low Rds(on) Super Junction Technology Low Gate Charge High Efficiency Halogen-Free Robust Performance for SMPS & Industrial Drives Features New ...

Brand Name:ESTEL

Model Number:1S63XKN1D1-36E-4

Place of Origin:Shenzhen, China (Mainland)

Power Distribution Unit 1. Power DIstribution Unit Specifications Customer name NO. Product specification parameter description Product name PDU 1 Socket system and number IEC60320 C13(36) Product specification and model 1S63XKN1D1-36E-4 (BM) 2 Internal ...

Categories:PMIC Chip

Country/Region:china

... of high voltage Super Junction MOSFET with FRD 600V 70A 41mΩ Si Super junction MOSFET with Fast Recovery Diode Applications: Solar inverters • LCD/LED/PDP TV • Telecom/Server Power supplies • AC-DC Power Supply PSF70060B is PowerCubeSemi’s

Brand Name:Original brand

Model Number:NVHL040N65S3F

Place of Origin:Original

... to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET is

Brand Name:Anterwell

Model Number:TK10P60W

Place of Origin:original factory

MOSFETs Silicon N-Channel MOS (DTMOS) TK10P60W Applications • Switching Voltage Regulators Features (1) Low drain-source on-resistance: RDS(ON) = 0.327 Ω (typ.) by used to Super Junction Structure : DTMOS (2) Easy to control Gate switching (3) ...

Place of Origin:MALAYSIA

Brand Name:Standard Brand

Model Number:APT77N60JC3

APT77N60JC3 is a Super Junction MOSFET Why Chose Mega Source ? Quality At the heart of Mega Source Elec. lies a commitment to total customer satisfaction with a secure quality system .With ...

Brand Name:Original Factory

Model Number:NTP095N65S3HF

Place of Origin:CN

... for outstanding low on-resistance and lower gate charge performance. Specification Of NTP095N65S3HF Part Number NTP095N65S3HF FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 650 V Current -

Brand Name:Infineon

Model Number:IRLR7843TRPBF

Place of Origin:Original Factory

Transistor IRLR7843TRPBF TO-252 30V 161A Power MOSFET for Telecom and Industrial Use IRLR7843PbF IRLU7843PbF Description Power MOSFET Selection for Non-Isolated DC/DC Converters Absolute Maximum Ratings Parameter Max. Units VDS Drain-to-Source Voltage 30...

Model Number:TK10P60W

Place of Origin:original factory

MOSFETs Silicon N-Channel MOS (DTMOS) TK10P60W Applications • Switching Voltage Regulators Features (1) Low drain-source on-resistance: RDS(ON) = 0.327 Ω (typ.) by used to Super Junction Structure : DTMOS (2) Easy to control Gate switching (3) ...

Brand Name:onsemi

Model Number:FDMS0312AS

Place of Origin:original

FDMS0312AS MOSFET Power Electronics 8-PQFN Package N-Channel 30V 22A 5.0mΩ Telecom secondary side rectification Product Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30 V Current - Continuous Drain (Id) @ ...

Brand Name:Maplesemi

Model Number:SLH60R080SS

Place of Origin:Original

...Power MOSFET is produced using Maple semi‘s Advanced Super-Junction technology. This advanced technology has been especially tailored to minimize conduction loss, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for AC/DC power...

Brand Name:Hua Xuan Yang

Model Number:HXY4409

Place of Origin:ShenZhen China

...given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C.

Brand Name:VISHAY

Model Number:SUD50P06-15L-E3

Place of Origin:Original Manufacturer

...Mosfet Mounting Type: Surface Mount Package: TO-252 High Light: n channel mosfet transistor , n channel transistor SUD50P06-15L-E3 Integrated Circuit IC Chip MOSFET P-CH 60V 50A TO252 TrenchFET Series P-Channel 60 V (D-S), 175 °C MOSFET FEATURES 1, TrenchFET® Power MOSFET 2, 175 °C Junction

Place of Origin:China

Brand Name:Huawei

Model Number:PMU 01B

Telecom Power Supply Part Huawei Monitoring PMU 01B Power Module Huawei Telecom Power Supply Part Huawei PMU 01B Monitoring Module Device Attributes We have PMU01B for sale, both refurbished and new, at prices typically up to 90% less than the original vendor price. Our super...

Brand Name:Huawei

Model Number:R4850S1 rectifier

Place of Origin:China

New and Original Huawei R4850S1 Super Efficiency Rectifier power Module Warehouse Lead time: We have a lot of stock, but we cannot guarantee that the product will still be in stock when you place your order. Therefore, please check with our sales team bef...

Model Number:PBSS4160T,215

Place of Origin:CN

PBSS4160T NPN low VCEsat transistor in a SOT23 plastic package PNP complement to PBSS5160T FEATURES • Low collector-emitter saturation voltage VCEsat • High collector current capability IC and ICM • High efficiency, reduces heat generation • Reduces ...

Brand Name:IR

Model Number:F1405S

Place of Origin:CHINA

... MOSFET Typical Applications Stripe Planar design of HEXFET® Power MOSFETs utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET power MOSFET are a 175°C junction operating...

Brand Name:ON

Model Number:FGH60N60SMD

Place of Origin:Original

...Power Transistor 60a 600v To247 Igbt Transistors Description Using novel field stop IGBT technology, ON Semiconductor’s new series of field stop 2nd generation IGBTs offer the optimum performance for solar inverter, UPS, welder, telecom, ESS and PFC applications where low conduction and switching losses are essential. Features Maximum junction...