three stage high power rf amplifier

Brand Name:SWT

Model Number:SW-PA-8002000-60C

Place of Origin:China

High performance 0.8 - 2 GHz L Band Power Amplifier Psat 57 dBm High Power RF Amplifier For Test and Measurement Description The 0.8-2 GHz Psat 57 dBm RF Power Amplifier Box is a high-performance amplifier designed for a wide range of RF applications, including communications, radar, and electronic warfare. This amplifier provides exceptional power...

Brand Name:Kimpok Technology / OEM

Model Number:KP-LAM800-50W

Place of Origin:China

500Mhz - 2400MHz High Power RF Power Amplifier Smaller Size LAN 28V DC ​Features: The integrated Noise source and RF PA in one house, smaller size and only connect DC28,6A to it Prevent the interference of high radiated RF power to monitoring-unit and PA...

Brand Name:Ding Shen

Model Number:DS-LAM800-50W

Place of Origin:China

500Mhz - 2400MHz High Power RF Power Amplifier Smaller Size LAN 28V DC ​Features: The integrated Noise source and RF PA in one house, smaller size and only connect DC28,6A to it Prevent the interference of high radiated RF power to monitoring-unit and PA...

Brand Name:XCE

Model Number:XCE BB50

Place of Origin:China

Double Sided High Frequency Pcb With RF Microwave For High Power RF Amplifier Quick Detail : Type Pcb Material Rogers Layer 2 Size 6*6cm Permittivity 2.2 Color Green Surface Finish Immersion Tin Parameter: Model Parameter thickness(mm) Permittivity(ER) F4B...

Brand Name:NENGXUN

Model Number:NX-PA5.8GHz

... power output and anti-interference performance, it meets the demanding requirements in industrial, communication and military fields. Core Performance Highlights Precise ...

Brand Name:VBE

Model Number:VBPA14000M

Place of Origin:China

...RF Power Amplifier PA , RF Power Amplifier Module VBE RF Power Amplifier Module Introdutions: VBE solutions of RF modules including radio frequency signal source,radio frequency power amplifier(PA),low noise amplifier(LNA), Radio Frequency outdoor unit(ODU) and customized radio frequency module solution,the frequency band cover P-wave band,L-wave band,S-wave band,Ku-wave band and Ka-wave band and so on,broadly applying in high...

Brand Name:flysafe

Place of Origin:Guangdong, China

High-power 5.2 GHz 30W RF Power Amplifier Module Product Parameters Frequency 5.2 GHz Test voltage 28 V Current 2.8 A Output 30 W Gain 45 dB Output stability 1 dB Connector SMA / Female Output connector VSWR ≤1.30 (No power and VNA test) Power supply wire Red+Black+Enable wire Enable Control High...

Brand Name:ATNJ

Model Number:AT-20-700-20W

Place of Origin:China

...power amplifier (UWPA) is a power amplifier with ultra wide bandwidth designed to amplify signals across a wide range of frequencies while maintaining high efficiency, linearity, and low distortion. It was specifically designed for RF jamming, but has also

Brand Name:TX TELSIG

Model Number:YP233433

Place of Origin:China

... InGaP/GaAs HBT process. This amplifier provides a typical gain of 35dB and P1dB power of 33dBm, typical bias condition is 5V at 320mA. The input are internally matched to 50Ω and require a minimum of external matching components to ...

Place of Origin:MALAYSIA

Brand Name:MOTOROLA

Model Number:PTFA18100

... Mega Source Electronic Co., LTD specializes in High frequency microwave devices: These products are widely used in micro-cellular amplifier, CATV radio and television transmitters, GSM / CDMA / PHS repeaters, trunk amplifiers, tower mounted amplifiers,

Place of Origin:CHINA

Brand Name:EST

Model Number:100W-300MHz

...High Power RF Jamming Module Working Frequency 20MHz~2700MHz Product Description: Our 100W Blocking Power Amplifier Module is a high-performance LTE NR PA Module for communication use. It comes with a working voltage of DC 28V and a working frequency of 20MHz~2700MHz, enabling a maximum working current of ≤10A. This 100W Blocking Power Amplifier Module also provides an output power of 50dBm, and its module size is 200×90×24mm. It is highly

Brand Name:MXT

Model Number:TDD4200T4400M 10W-28V

Place of Origin:China

... applications. It is small in size (170*110*20mm) and is housed in a durable aluminum case. With its low input/output VSWR of less than 1.8, it offers high linearity and low noise figure of less than 3dB. It supports a wide range of input power of

Place of Origin:Guangdong, China

Brand Name:creatall

Model Number:250w High Power Audio Amplifiers

... pre-stage tuning, assembly is very convenient. Model: SUB250W Bass Speaker Amplifier Working voltage: Double AC22-26V Output power: 250W (max) Chip Type: FET Op amp type: 4558 Pre-timing: Volume+bass adjustment Weight:...

Brand Name:Analog Devices Inc.

Model Number:AD9361BBCZ

Place of Origin:Multi-origin

...RF Power Transistor - High Power High Reliability The AD9361BBCZ is a high-power, high-efficiency N-channel RF power transistor designed for use in the 900 MHz ISM band. The device features a wide gate voltage range and excellent thermal stability. It is ideal for applications such as RF power amplifiers, cellular base stations and other wireless communication applications. Features: • High power capability: Pout = 10 W • High

Place of Origin:CN

Brand Name:Original Factory

Model Number:QPA9501TR13

Wireless Communication Module QPA9501TR13 32dB 3-Stage High Power Amplifier Module [MJD Advantage] + 15 years experience for electronic components + Secure Ordering + Excellent Feedback + Delivery Date Guaranteed + ...

Model Number:YPM5840B

Place of Origin:Jiangsu, China

Brand Name:SZHUASHI

... to 5725-5850MHz signal. This module has the advantages of high average output power, and good in band flatness. Features Frequency Range 5725-5850MHz Operation Voltage 28V Output power 46dBm Power flatness <1dB Packing & Delivery To better ensure the

Brand Name:Diodes Incorporated

Model Number:BS816A-1

Place of Origin:USA

...RF Transistors Manufacturer: DIODES Product Category: P-CHANNEL ENHANCEMENT RoHS: Details Mounting Style: - Package / Case: 16NSOP Packaging: Standard Unit Weight: - oz This transistor is suitable for RF power amplifiers in various applications such as wireless communication, broadcasting, and industrial RF equipment. ● P-channel enhancement mode ● DMOS transistor technology ● High power

Brand Name:Original Brand

Model Number:2SC5200 & 2SA1943

Place of Origin:CN

... stage applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Absolute maximum ratings(Ta=25°C) SYMBOL PARAMETER CONDITIONS ...

Brand Name:Geehe or OEM

Model Number:Optical Isolator

Place of Origin:Wuhan, China

Optical Isolator 1550nm Polarization Independent Dual Stage 0.25mm 1m EX: ISO -PID-55-P-09-1-0.5-FC-M Description The divice let he light just can be transmitted along a fixed direction Key Features Optical patch Epoxy-free Low PMD Telcordia GR-1221-CORE ...