through hole rf bipolar transistors

Brand Name:original

Model Number:MRF9045LR1

Place of Origin:original

...RF Bipolar Transistors Si original in stock The ASI MRF9045LR1 is a high voltage, gold-metalized, laterally diffused metal oxide semiconductor. Ideal for today's RF power amplifier Applications. Product Category: RF MOSFET Transistors RoHS: Details Transistor...

Brand Name:Microchip / Microsemi

Model Number:JAN2N2222A

Place of Origin:ORIGINAL

JAN2N2222A Bipolar Transistors - BJT 50 V Small-Signal BJT Manufacturer: Microchip Product Category: Bipolar Transistors - BJT RoHS: N Technology: Si Mounting Style: Through Hole Package / Case: TO-18-3 Transistor Polarity: NPN Configuration: Single ...

Place of Origin:PHILIPPINE

Brand Name:MOT

Model Number:MRF15060S

Quick Detail: MRF15060S - Motorola, Inc - RF POWER BIPOLAR TRANSISTORS Description: Designed for broadband commercial and industrial applications at frequen- cies from 1400 to 1600 MHz. The high gain and broadband performance of these devices makes them ...

Model Number:2SC4468

Place of Origin:Guangdong, China

Brand Name:original

...transistor TO-3-3 Products Description:​ 1. TO-3P NPN 140V 10A 2. 2SC4468 bipolar transistor 3. Bipolar(BJT)Transistor NPN 140v 10a 20 MHz 100W Through Hole to-3p 4. Trans GP BJT NPN 140V 10A 3-pin(3+Tab) Technological Parameters: frequency 20 MHz Dissipation power 100 W polarity NPN installation Through Hole...

Brand Name:Toshiba

Model Number:2SC5200

Place of Origin:Original

...Transistor 230V 15A 150W Mosfet Bipolar Transistor Power Amplifier Applications • High breakdown voltage: VCEO = 230 V (min) • Complementary to 2SA1943 • Suitable for use in 100-W high fidelity audio amplifier’s output stage Applications • power amplification Date Sheet Product Attribute Attribute Value Product Category: Bipolar Transistors - BJT Mounting Style: Through Hole Package / Case: TO-3P-3 Transistor...

Place of Origin:US

Brand Name:Original

Model Number:TIP50T

Product Description Product Category: Bipolar Transistors - BJT RoHS: RoHS Compliant Details Mounting Style: Through Hole Package / Case: TO-220-3 Transistor Polarity: NPN Configuration: Single Collector- Emitter Voltage VCEO Max: 400 V Collector- Base ...

Brand Name:FSC

Model Number:FDPF10N60NZ

Place of Origin:CHINA

FDPF10N60NZ NPN PNP Transistors N-Channel 600V 10A (Tc) 38W (Tc) Through Hole TO-220F N-Channel MOSFET 600V, 10A, 0.75  Features •RDS(on) = 0.64 ( Typ.)@ VGS = 10V, ID = 5A • Low Gate Charge ( Typ. 23nC) • Low Crss ( Typ. 10pF) • Fast Switching • 100% ...

Place of Origin:CN

Brand Name:Original Factory

Model Number:DTC114EETL

... in 2013, is a leading distributor of electronic components, including analog, digital, and RF integrated circuits, widely used in aerospace, military, medical, automotive, and consumer electronics. We offer product sourcing, design support, and have a

Brand Name:Analog Devices Inc.

Model Number:AD8351ARMZ-REEL7

Place of Origin:Multi-origin

AD8351ARMZ-REEL7 RF Power Transistor Product Description: The AD8351ARMZ-REEL7 is an advanced silicon bipolar power transistor specifically designed for use in RF power amplifiers applications. It is a high performance, low cost device which provides high ...

Categories:Diodes Transistors

Country/Region:china

MJE182 POWER TRANSISTOR Bipolar (BJT) Single Transistor NPN 80V TO-225 MJE182G Bipolar (BJT) Single Transistor NPN 80V 3A 1.5W TO-225 Through Hole Most Popular Power Bipolar Transistors JANTX2N2222AUB BCP56-16T1G MJD122T4G BCX5616TA PZT2907AT1G BCP56-16 ...

Brand Name:Bourns

Model Number:BIDW30N60T

...technology from a MOSFET gate and a bipolar transistor and are designed for high voltage/high current applications. The Model BID IGBTs use advanced Trench-Gate Field-Stop ...

Brand Name:Upperbond

Model Number:Maker

Place of Origin:China

... are one of the basic building blocks of modern electronics. It is composed of semiconductor material usually with at least three terminals for connection to an external circuit. 1. Bipolar Junction Transistors The first bipolar junction transistors were

Brand Name:ST

Model Number:BUF420AW

Place of Origin:Malaysia

BUF420AW Bipolar (BJT) Transistor NPN 450 V 30 A 200 W Through Hole TO-247-3 Features: ●STMicroelectronics PREFERRED SALESTYPE ●HIGH VOLTAGE CAPABILITY ●VERY HIGH SWITCHING SPEED ●MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION ●LOW BASE-DRIVE ...

Brand Name: USA Inc.

Model Number:PH2369

Place of Origin:CHINA

...Bipolar (BJT) Transistor NPN 15V 200mA 500MHz 500mW Through Hole TO-92-3 DESCRIPTION NPN switching transistor in a TO-92 FEATURES • Low current (max. 200 mA) • Low voltage (max. 15 V). APPLICATIONS • High-speed switching. Product Attributes Transistor...

Brand Name:Original Factory

Model Number:IXBH32N300

Place of Origin:CN

...Transistors TO-247-3 Through Hole​ Product Description Of IXBH32N300 IXBH32N300 is High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor. Specification Of IXBH32N300 Part Number: IXBH32N300 Product Category: IGBT Transistors Technology: Si Package / Case: TO-247-3 Mounting Style: Through Hole...

Place of Origin:Beijing,China

Brand Name:NUBWAY

Model Number:NBW-FR100

...Bipolar Fractional RF Microneedle For Skin rejuvenation Treatment scope: a.Continuous treatment from Epidermis to dermis –Tightening, Pore size, Superficial scar, Wrinkles b.Stronger treatment power throughout dermis area-lifting tightening, wrinkles, flushing, Lightening and Acne. c.Bio-modulation effect by combination treatment with fibroblast media through micro delivery hole...

Brand Name:ST

Model Number:D45H8

Place of Origin:CHINA

D45H8 NPN PNP Transistors Bipolar (BJT) Transistor PNP 60V 10A 50W Through Hole TO-220AB Complementary power transistors Features ■ Low collector-emitter saturation voltage ■ Fast switching speed Applications ■ Power amplifier ■ Switching circuits ...

Brand Name:TX TELSIG

Model Number:YP2233W

Place of Origin:China

... applications with up to +35dBm of compressed 1dB power, typical bias condition is 5V at 280mA. The device is manufactured on an advanced InGaP Heterojunction Bipolar Transistor (HBT)

Categories:Cavitation Slimming Machine

Country/Region:china

New Cavitation ultrasound machine &Vacuum+Bipolar RF& Tripolar RF Slimming Machine On Sale Working Principle Body shape instrument pick the Israel hole blasting fat technology, RF technology and vacuum melting fat pinch drainage techniques in one set with ...

Place of Origin:Beijing China

Brand Name:NUBWAY

Model Number:NBW-S100

... technology, RF technology and vacuum melting fat pinch drainage techniques in one set with multi-body sculpting, at the same time have a 40K strong sound ...