toshiba tk7a90e power transistor

Brand Name:DELI

Model Number:2SC2240 - GR

Place of Origin:Japan

New and Original Transistor 2SC2240-GR TOSHIBA Transistor silicon NPN epitaxial type (PCT process) Details , Pls Reference DataSheet Deli electronics tehcnology co ltd www.icmemorychip.com Email:sales3@deli-ic.com Skype:hkdeli881

Brand Name:TOSHIBA

Model Number:TK7A90E,S4X

...��道模式: Enhancement 商标名: MOSVIII 封装: Tube 商标: Toshiba 配置: Single 下降时间: 15 ns 高度: 15 mm 长度: 10 mm 产品类型: MOSFETs 上升时间: 20 ns 系列: TK7A90E 工厂包装数量: 50 子类别: Transistors 晶体管类型:

Brand Name:Toshiba

Model Number:2SC5589

Place of Origin:Original Factory

...Toshiba Mosfet Power Transistor for high speed switching application Description The 2SC5589 is a high voltage, high efficiency, simple to use, 4A buck regulator optimized for a variety of applications. The 2SC5589 works from a 3.0V to 36V input voltage range, and provides up to 4A of continuous output current. The output voltage is adjustable from 30V down to 0.8V. The AOZ1284 integrates an N-channel high-side power...

Brand Name:NOVA acoustics

Model Number:MA-4400

Place of Origin:Guangzhou, China

...Power Amplifier With TOSHIBA Power Transistors (MA-4400) Quick details: Atopt BIG TOSHIBA transistor, very perfect sound Efficent cooling system, ensure the power amplifier stability Classic products, good quality MA Series Power Amplifier Mid-high level amplifier with remarkable performance and reliability we are famous are. High fidelity, Perfect circuit design and high efficient power transistors with fast recovery power

Brand Name:Toshiba

Model Number:MG200Q1US51

Place of Origin:Japan

Toshiba IGBT Power Module MG200Q1US51 Transistor Module MG200Q1US51 Product Description Manufactured by: Toshiba America, Inc. Part number: MG200Q1US51 Part Category: Transistors Description: 300A, 1200V, N-CHANNEL IGBT Collector-Emitter Voltage: 1200V Gate-Emitter Voltage: 20V Collector Current (DC): 300A Forward Current: (DC): 200A Collector Power...

Brand Name:Toshiba

Model Number:TPH2R306NH1,LQ

Place of Origin:Original

... Automotive U-MOSVIII-H Power MOSFETs are 100V N-channel power MOSFETs ideal for automotive applications. They feature low on-resistance with proprietary technology using a Cu connector. They have a narrowed gate threshold ...

Brand Name:TOSHIBA

Model Number:2SK3478

Place of Origin:Original

2SK3478 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (PIE-MOSV) ►Low drain-source ON resistance: RDS (ON) = 10 Ω (typ.) ►High forward ...

Brand Name:TOSHIBA

Model Number:VT130E1-4025BO

Place of Origin:JAPAN

... TRANSISTOR INVERTER Dimennsions 10.0cm x 11.0cm x 16.5cm Weight 0.85kg Product Details VT130E1-4025BO Specifications No. of occupancy I/O ...

Brand Name:Analog Devices Inc.

Model Number:AD9364BBCZ

Place of Origin:Multi-origin

AD9364BBCZ RF Power Transistor High Performing Reliable Power Solutions Product Name: AD9364BBCZ RF Power Transistors Description: The AD9364BBCZ RF power transistor is a high-power class AB transistor designed for use in commercial, industrial and ...

Place of Origin:PHILIPPINE

Brand Name:TOSHIBA

Model Number:MIG150J202HC

...TOSHIBA Intelligent Power Module Silicon N Channel IGBT Description: High Power Switching Applications Motor Control Applications Applications: z Integrates inverter, brake power circuits & control circuits (IGBT drive units, protection units for over-current, under-voltage & over-temperature) in one package. z The electrodes are isolated from case. z Outline : TOSHIBA...

Brand Name:Toshiba

Model Number:PM30-38897

Toshiba AC Power Supply PM30-38879 Ultrasound Part 1.Compatible system: Toshiba 2.P/N: PM30-38879 3.Repair Time: 2-4 days 4.Warranty after fixed about 60 days Other related Ultrasound spare part that we can offer/repair: Brand Machine type Description Toshiba Famio 5 (SSA-510A) TFT P/N: BSM31-5629 Toshiba Famio 8 SSA-530A Power Panel (P/N:TSB1-20-20232 /BSM31-5412) Toshiba Famio 8 SSA-530A BSM31-5407e amplifier board (P/N: tsb1-20-20204) Toshiba

Brand Name:Hua Xuan Yang

Model Number:30P06D TO-252

Place of Origin:ShenZhen China

...Power Transistor , Custom Field Effect Transistor High Power Transistor DESCRIPTION The 30P06D uses advanced trench technology to provide excellent R DS(ON) and low gate charge .This device is suitable for use as a load switch or in PWM applications. High Power Transistor GENERAL FEATURES V DS =- 60V,I D =-30A R DS(ON) < 40mΩ @ V GS =-10V R DS(ON) < 55mΩ @ V GS =-4.5V High Power...

Brand Name:Hua Xuan Yang

Model Number:4306W-A

Place of Origin:ShenZhen China

...Power Transistor For Inverter Systems Management What is a Mosfet Power Transistor ? A power MOSFET is a special type of metal oxide semiconductor field effect transistor. It is specially designed to handle high-level powers. The power MOSFET’s are constructed in a V configuration. Therefore, it is also called as V-MOSFET, VFET. The symbols of N- channel & P- channel power MOSFET are shown in the below figure. Mosfet Power

Brand Name:Original brand

Model Number:IGT60R070D1ATMA1

Place of Origin:Original

... • Superior commutation ruggedness • Qualified for industrial applications according to JEDEC Standards (JESD47 and JESD22) Benefits • Improves system efficiency • Improves power density •

Model Number:PBSS4160T,215

Place of Origin:CN

...transistor in a SOT23 plastic package PNP complement to PBSS5160T FEATURES • Low collector-emitter saturation voltage VCEsat • High collector current capability IC and ICM • High efficiency, reduces heat generation • Reduces printed-circuit board area required • Cost effective replacement for medium power transistor BCP55 and BCX55. APPLICATIONS • Major application segments: – Automotive 42 V power...

Brand Name:original

Model Number:SIHB22N60E-E3

Place of Origin:Original Manufacturer

... POWER TRANSISTOR SIHB22N60E - E3 600V 21A PACKAGE D2PAK FET Type: N-channel Operating Temperature: -55°C ~ 150°C (TJ) Package: TO263-3 D2PAK High Light: n channel mosfet transistor , n channel transistor High Voltage Single Mosfet Power Transistor ...

Categories:RF Transistors

Country/Region:china

... 20 AMPERE NPN Silicon Power Transistor 400- 500 VOLTS 175 WATTS Category Transistor Mfr Motololar Series - Part Status - Mounting Type - The MJ13333 transistor is designed for high voltage, high–speed, power switching in inductive circuits where fall...

Categories:Diodes Transistors

Country/Region:china

MJE182 POWER TRANSISTOR Bipolar (BJT) Single Transistor NPN 80V TO-225 MJE182G Bipolar (BJT) Single Transistor NPN 80V 3A 1.5W TO-225 Through Hole Most Popular Power Bipolar Transistors JANTX2N2222AUB BCP56-16T1G MJD122T4G BCX5616TA PZT2907AT1G BCP56-16 ...