trans mosfet 60v

Brand Name:Vi shay

Model Number:IRFP064PBF

Place of Origin:Shenzhen, China

IRFP064PBF Trans MOSFET N-CH 60V 70A 3-Pin(3+Tab) TO-247AC Descriptions : Third generation Power MOSFETs from Vishay provide thedesigner with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The...

Brand Name:original

Model Number:L2N7002KLT1G

Place of Origin:China

Hot Selling L2N7002KLT1G With Great Price SOT-23 L2N7002KLT1G Products Description: 1. Trans MOSFET N-CH 60V 0.32A 3-Pin SOT-23 T/R 2. Nch, 60V, 0.38A, 2.3Ω@10V Diodes and Rectifiers 3. S- Prefix for Automotive and Other Applications Requiring Unique Site...

Brand Name:Infineon

Model Number:BSP170PH6327

Place of Origin:CHINA

BSP170PH6327 Infineon Trans MOSFET P-CH 60V 1.9A Automotive 4-Pin(3+Tab) SOT-223 T/R Product Technical Specifications EU RoHS Compliant ECCN (US) EAR99 Part Status ...

Brand Name:Infineon

Model Number:BSC016N06NSATMA1

Place of Origin:original

BSC016N06NSATMA1 MOSFET Power Electronics N-Channel OptiMOSTM Power-MOSFET 60V FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60 V Current - Continuous Drain (Id) @ 25°C 30A (Ta), 100A (Tc) Drive Voltage (Max Rds On, Min ...

Categories:RF Transistors

Country/Region:china

BLF6G10LS-135RN RF MOSFET Transistors Trans MOSFET N-CH 65V 32A 3-Pin Manufacturer: Ampleon Product Category: RF MOSFET Transistors Transistor Polarity: N-Channel Technology: Si Id - Continuous Drain Current: 32 A Vds - Drain-Source Breakdown ...

Brand Name:Original brand

Model Number:NTMFS4C029NT1G

Place of Origin:China

Trans MOSFET N-CH 30V 15A SO-FL T/R NTMFS4C029NT1G New Parts Transistors Product Description Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Product Specifications Product name Transistors Type NTMFS4C029NT1G Brand Brand New Color NTMFS4C029 Function N-Channel Transistors Usage MOSFETs...

Brand Name:Ti

Model Number:CSD18534Q5A

... Secondary Side Synchronous Rectifier Isolated Converter Primary Side Switch Motor Control 3 Description This 7.8 mΩ, 60 V, SON 5 × 6 mm NexFETTM power MOSFET is designed to

Brand Name:Onsemi

Model Number:2N7002KT1G 2V7002KT1G 2N7002KT7G

Place of Origin:CHINA

2N7002K 2V7002K Signal mosfet N-Channel Small 60V 380mA semiconductor components Discrete&Power Modules 2N7002K 2V7002K N-Channel Small Signal MOSFET 60V 380mA Applications: Low Side Load Switch Level Shift Circuits DC−DC Converter Portable Applications...

Brand Name:Onsemi

Model Number:2N7002KT1G 2V7002KT1G 2N7002KT7G

Product Description 2N7002K 2V7002K Signal mosfet N-Channel Small 60V 380mA semiconductor components Discrete&Power Modules 2N7002K 2V7002K N-Channel Small Signal MOSFET 60V 380mA Applications: Low Side Load Switch Level Shift Circuits DC−DC Converter ...

Brand Name:Omron

Model Number:G3VM-61WR(TR05)

...MOSFET 60V 3A Product Attribute Attribute Value Select Attribute Manufacturer: Omron Product Category: Solid State Relays - PCB Mount RoHS: Details Packaging: Reel Packaging: Cut Tape Mounting Style: PCB Mount Load Current Rating: 3 A Load Voltage Rating: 60 VAC, 60 VDC Relay Contact Form: 1 Form A (SPST-NO) Control Voltage Range: 1.1 VDC to 1.4 VDC Package / Case: SON-4 Output Type: MOSFET

Brand Name:onsemi

Model Number:SZNUD3160DMT1G

MOSFET 60V DUAL INDUCTIVE LOAD D Product Attribute Attribute Value Select Attribute Manufacturer: onsemi Product Category: MOSFET RoHS: Details Technology: Si Mounting Style: SMD/SMT Package / Case: SC-74-6 Minimum Operating Temperature: - 40 C ...

Brand Name:Infineon

Model Number:BSP296NH6327XTSA1

Place of Origin:China

BSP296NH6327XTSA1 N-Channel Logic Level MOSFET 60V 2.5A SOT-23 Package Ultra-Low 85mandOmega; Rds(on) 4V Vgs(th) Fast Switching 100% Rg ...

Brand Name:Toshiba

Model Number:TK100E06N1,S1X

Place of Origin:JAPAN

Product Description: TK100E06N1,S1X Power IC Chip is a high-performance, high-reliability TO-220-3 package semiconductor device designed to provide optimal performance and reliability for Power IC applications. It is manufactured by Toshiba, a leading ...

Place of Origin:United States

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Brand Name:Huixin

Model Number:MMBT7002K

Place of Origin:China

Small Signal MOSFET 60V 115mA N-Channel SC-70 SOT-323 These Devices are Pb−Free and are RoHS Compliant , Ultra−Small Surface Mount ...

Brand Name:Hua Xuan Yang

Model Number:AP6H06S

Place of Origin:ShenZhen China

...Mosfet Power Transistor AP6H06S 6A 60V Customized Mosfet Power Transistor Introduction MOSFET technology is ideal for use in many power applications, where the low switch on resistance enables high levels of efficiency to be attained. There is a number of different varieties of power MOSFET available from different manufacturers, each with its own characteristics and abilities. Many power MOSFETs...

Place of Origin:US

Brand Name:Original

Model Number:FQP50N06

Product Detail Packaging Tube Part Status Not For New Designs FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 50A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id...

Brand Name:Original Factory

Model Number:IPD06P004N

Place of Origin:CN

... is PG-TO252-3(Surface Mount). Specification Of IPD06P004N Part Number IPD06P004N FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60 V Current - Continuous Drain (Id) @ 25°C 16.4A (Tc) ...

Brand Name:Nexperia

Model Number:BUK9Y8R7-60E,115

... Tape & Reel (TR) Cut Tape (CT) Digi-Reel® Product Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60 V Current - Continuous Drain (Id)

Brand Name:Infineon

Model Number:IRF640NPBF

Place of Origin:Original Factory

...Trans N Channel 200V 18A Switching MOSFET Power Transistor Description Fifth Generation HEXFET® Power MOSFET s from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs...