transistor igbt

Brand Name:StarPower

Model Number:GD200FFY120C6S

Place of Origin:CHN

...TRANSISTOR IGBT MODULE 1.2KV 309A SEMICONDUCTOR Manufacturer: StarPower Europe AG Product Category: IGBT MODULE RoHS: Details Type: IGBT MODULE Brand: StarPower Operating Supply Voltage: 1.2 V Packaging: Standard Subcategory: IGBT MODULE Description STARPOWER IGBT...

Brand Name:Original Factory

Model Number:FS770R08A6P2B

Place of Origin:CN

Automotive IGBT Modules FS770R08A6P2B 750V 450A 654W Transistors IGBT Modules Product Description Of FS770R08A6P2B FS770R08A6P2B power module implements the new EDT2 IGBT generation, which is an automotive Micro-Pattern Trench-Field-Stop cell design ...

Brand Name:ST

Model Number:STGW80H65DFB

Place of Origin:Original

...Gate Bipolar Transistor 650V 80A 469W IGBT Transistors Applications • Photovoltaic inverters • High frequency converters Specifications Product Attribute Attribute Value Manufacturer: STMicroelectronics Product Category: IGBT Transistors Technology: Si...

Place of Origin:Original

Brand Name:Microsemi Corporation

Model Number:APT50GT60BRDQ2G

APT50GT60BRDQ2G IGBT Power Module Transistors IGBTs Single APT50GT60BRDQ2G Specifications Part Status Active IGBT Type NPT Voltage - Collector Emitter Breakdown (Max) 600V Current - Collector (Ic) (Max) 110A Current - Collector ...

Place of Origin:US

Brand Name:Original

Model Number:FGH40N60SFDTU

Product Detail Packaging Tube Part Status Active IGBT Type Field Stop Voltage - Collector Emitter Breakdown (Max) 600V Current - Collector (Ic) (Max) 80A Current - Collector Pulsed (Icm) 120A Vce(on) (Max) @ Vge, Ic 2.9V @ 15V, 40A Power - Max 290W ...

Brand Name:STMicroelectronics

Model Number:STGWA60H65DFB

Place of Origin:Shenzhen, China

... Transistors IGBT Chip N-CH 650V 80A 375000mW 3-Pin(3+Tab) TO-247 Tube General Description : These devices are IGBTs developed using an advanced proprietary trench gate field-stop structure. These devices are part of the new HB series of IGBTs, which...

Brand Name:Lite-On Inc.

Model Number:LTV-356T-D

Place of Origin:original

LTV-356T-D Power Isolator IC Industry-Leading Insulated Gate Bipolar Transistor (IGBT) Driver Product: LTV-356T-D Power Isolator IC Features: • Maximum working voltage: 50V • Maximum output current: 1....

Model Number:FGH40N60SFD

Place of Origin:original

Brand Name:original

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Brand Name:DELI

Model Number:KD421K15

Place of Origin:JAPAN

Deli electronics tehcnology co ltd www.icmemorychip.com Email:sales3@deli-ic.com Skype:hkdeli881

Brand Name:ZFeng

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Brand Name:..

Model Number:1200V 1200A FZ1200R12KF6

Place of Origin:..

Brand Name:ON/Fairchild

Model Number:G40N60UFD

Place of Origin:Original Factory

G40N60UFD Ultra fast IGBT Transistor N-Channel with Built in Diode 600V 40A 160W, TO-3P Descriptions: Fairchild's UFD series of Insulated Gate Bipolar Transistors (IGBTs) provides low conduction and switching losses. The UFD series is designed for ...

Brand Name:REASUNOS

Place of Origin:Guangdong, CN

... excellent combination of low conduction losses, high switching frequency, high reliability, and high current density. High Power IGBT has a current density of 400A/cm2 and an application frequency of 60KHz. It also has a number of advantages, such as its

Brand Name:KRUNTER

Model Number:KMP25H12X4-7M

Place of Origin:CHINA

...IGBT Module for Harsh Environments and High Temperatures Product Description: The IGBT Module is a cutting-edge electronic component that belongs to the family of Insulated Gate Bipolar Transistor (IGBT) units. It is also known as an Insulated Gate Bipolar Transistor Module or Insulated Gate Transistor...

Brand Name:Bourns

Model Number:BIDW30N60T

...technology from a MOSFET gate and a bipolar transistor and are designed for high voltage/high current applications. The Model BID IGBTs use advanced Trench-Gate Field-Stop technology to provide greater control of the dynamic characteristics, resulting in a

Brand Name:STMicroelectronics

Model Number:STGWA19NC60HD GWA19NC60HD

Place of Origin:CHINA

STGWA19NC60HD GWA19NC60HD ultrafast IGBT 31 A 600 V very fast IGBT with Ultrafast diode Transistors - IGBTs - Single 31 A, 600 V, very fast IGBT with Ultrafast diode Product details Description : This device is an ultrafast IGBT. It utilizes the advanced ...

Brand Name:Infineon Technologies

Model Number:IKW75N60T

Place of Origin:China

...IGBT Transistors IGBT Transistors LOW LOSS DuoPack 600V 75A,600 V IGBT with anti-parallel diode in TO-247 The 600 V, 75 A hard-switching TRENCHSTOP™ IGBT3 copacked with full-rated free-wheeling diode in a TO-247 package, leads to significant improvement of static as well as dynamic performance of the device, due to combination of trench-cell and fieldstop concept. The combination of IGBT...

Place of Origin:USA

Brand Name:IR

Model Number:IRGP4063DPBF

...Transistor IRGP4063DPBF NEW AND ORIGINAL STOCK [Who we are?] Founded in 1998, Shenzhen CM GROUP Electronic Technology Co., Ltd.is a professional electronic marketing corporation entirely engaged in the fields of semi-conductors and electronic components sale and service for clients over 20 years, specialize in selling the new and unused, original factory sealed packing electronic components. specialize in IC,diode,transistor,IGBT...

Brand Name:SIEMENS

Model Number:6SY7000-0AC37

...-0AE73 S SIMOVERT MASTER DRIVES IGBT TRANSISTOR MODULE 300A 1200V Descripition Part Number 6SY7000-0AE73 Manufacturer / Brand SIEMENS Category Discrete Semiconductor Products > Transistors - IGBTs - Modules Description IGBT Modules Description IC FLASH ...

Brand Name:ONSEMI

Model Number:MGP20N40CL

Place of Origin:Original

MGP20N40CL SMARTDISCRETES Internally Clamped, N-Channel IGBT switching power mosfet low power mosfet This Logic Level Insulated Gate Bipolar Transistor (IGBT) features Gate–Emitter ESD protection, Gate–Collector overvoltage protection from ...