uhf rf amplifier transistor

Model Number:BLF7G20L-90P

Place of Origin:Malaysia

Brand Name:KAIGENG

BLF7G20L-90P N/A Electronic Components IC MCU Microcontroller Integrated Circuits BLF7G20L-90P #detail_decorate_root .magic-0{border-bottom-style:solid;border-bottom-color:#53647a;font-family:Roboto;font-size:24px;color:#53647a;font-style:normal;border...

Brand Name:TeXin

Model Number:TX-1.5RFPA

Place of Origin:China

Customization Wifi 2.4GHz 5.8GHz 5.2GHz 1.5GHz 50 Watt 100 Watt Wideband VHF UHF RF Amplifier Ham Radio Frequency 1-6000MHz for RF power amplifier can be customized ,output power such as 2W 5W 10W 20W 30W 40W 50W 60W 70W 80W 90W 100W ...

Place of Origin:MALAYSIA

Brand Name:MOTOROLA

Model Number:MHW812A3

...RF LINE UHF POWER AMPLIFIER. Part NO: MHW812A3 Brand: MOTOROLA Date Code: 00+ Quality Warranty: 3 Months Mounting Type: Screws Overview Mega Source Electronic Co., LTD specializes in High frequency microwave devices: These products are widely used in micro-cellular amplifier, CATV radio and television transmitters, GSM / CDMA / PHS repeaters, trunk amplifiers, tower mounted amplifiers...

Brand Name:SWT

Model Number:SW_PA_08001000_47C

Place of Origin:China

... radio frequency (RF) signals within the ultra-high frequency (UHF) band, specifically in the frequency range of 800 megahertz (MHz) to 1000 MHz. Frequency Range: This power amplifier operates within the UHF band, covering frequencies from 800 MHz to

Brand Name:Analog Devices Inc.

Model Number:HMC789ST89ETR

Place of Origin:Multi-origin

...RF Power Transistors Product Description: The HMC789ST89ETR RF Power Transistors are high-performance, high-frequency, high-power transistors suitable for use in amplifier applications. The HMC789ST89ETR offers excellent gain and power performance, as well as low noise, which makes it ideal for use in both linear and power amplifier applications. Features: - High-performance, high-frequency, high-power transistor...

Brand Name:VBE

Model Number:VBE10R5

Place of Origin:CHINA

Excellent Theramal Stability Rf Power Amplifier Transistor LDMOS FET 28V HF to 2.7GHz

Brand Name:WDS

Model Number:BiAMP RF

Place of Origin:China

...UHF/L band/S band/C band Bi-Directional RF Amplifier BiAMP RF Power Amplifier Provides 40/20/10/5W,150M/230M/400M/600M/800M/900M/1.4G/2.3G/5GHz Linear/Unlinear RF Amplifier, Designed For Broadband/Narrowband Digital Data Link Applications. This Series of Amplifiers Adopts Silicon Based Potassium Nitride Power Amplifier, High Speed Automatic Tx/Rx Switching,High Efficiency RF...

Brand Name:Mitsubishi

Model Number:RD06HVF1

Place of Origin:CN

... gain: Pout>6W, Gp>13dB @Vdd=12.5V,f=175MHz APPLICATION of RD06HVF1 For output stage of high power amplifiers in VHF band mobile radio sets. List Of Other Electronic Components In Stock PART NUMBER MFG/BRAND 　

Place of Origin:Jiangsu, China

Brand Name:SZHUASHI

Model Number:YP40601625T

SZHUASHI 100% New YP40601625T 30W 50V 5700- 5900MHz PA Power Amplifier RF Power Transistor with Standard Features Product Description The YP40601625T is a 30-watt, internally matched GaN HEMT, designed for multiple applications with frequencies ...

Brand Name:Original

Model Number:SZA5044Z

Place of Origin:Original

...Amplifiers RF Amplifier IRFHM9331TRPBF MSP430FR2100IPW16R Wireless RF Integrated Circuits Product Description RFMD’s SZA-5044 is a high efficiency class AB Heterojunction Bipolar Transistor (HBT) amplifier housed in a low-cost surface-mountable plastic package. This HBT amplifier...

Brand Name:ON

Model Number:MMBF5484

Place of Origin:ON

...: RF JFET Transistors RoHS: Details Transistor Type: JFET Technology: Si Transistor Polarity: N-Channel Vgs - Gate-Source Breakdown Voltage: - 25 V Id - Continuous Drain Current: 5 mA Maximum Drain ...

Brand Name:NXP

Model Number:BFS505

Place of Origin:CHINA

...Transistors RF Transistor NPN 15V 18mA 9GHz 150mW Surface Mount NPN 9 GHz wideband transistor FEATURES • Low current consumption • High power gain • Low noise figure • High transition frequency • Gold metallization ensures excellent reliability • SOT323 envelope. DESCRIPTION NPN transistor in a plastic SOT323 envelope. It is intended for low power amplifiers, oscillators and mixers particularly in RF...

Categories:RF Interconnects

Country/Region:china

...: 60 mA Gain: 24 dB NF - Noise Figure: 2.9 dB Type: Low Noise Amplifiers Mounting Style: SMD/SMT Package / Case: Y460 P1dB - Compression Point: 5 dBm OIP3 - Third Order Intercept: 14 ...

Place of Origin:China

Brand Name:OEM

...GaN RF Amplifier Module for Anti Drone System Fpv Defense System Product Parameters Place of Origin Guangdong, China Brand Name PADI FLY Place of Origin Guangdong, China Product Name RF power amplifier module(GaN) Frequency 400MHZ(420-450/430-460/428-...

Place of Origin:Original and New

Brand Name:CJ/Changdian

Model Number:TIP41C TO-220

... distributor of electronic components, including analog, digital, and RF integrated circuits, widely used in aerospace, military, medical, automotive, and consumer electronics. We offer product sourcing, design support, and have a ...

Brand Name:LDSK

Place of Origin:Guangdong, China

...monitoring technical indicators of the power amplifier module stipulate the definition of each port of the module and the shape and structure of the module. RF Power Amplifier Rf Amplifier Board Rf Amplifier Module Anti-FPV Drone Security System Rf Power

Model Number:BFS505

Place of Origin:CHINA

...Transistors RF Transistor NPN 15V 18mA 9GHz 150mW Surface Mount NPN 9 GHz wideband transistor FEATURES • Low current consumption • High power gain • Low noise figure • High transition frequency • Gold metallization ensures excellent reliability • SOT323 envelope. DESCRIPTION NPN transistor in a plastic SOT323 envelope. It is intended for low power amplifiers, oscillators and mixers particularly in RF...

Brand Name:Amplifier Research

Model Number:75A250A

Place of Origin:USA

Amplifier Research 75A250A RF Amplifier Used Tested in Good Conditions Description of Amplifier Research 75A250A RF Amplifier The Amplifier Research 75A250A amplifier is a portable, self-contained, air-cooled, broadband, solid state amplifier unit designed for laboratory applications where instantaneous bandwidth, high gain and moderate power output are required. When used with an RF...

Brand Name:GREETWIN

Model Number:GW-VIP JAM6

Place of Origin:China

... to defeat remote controlled improvised explosive devices or an RCIED. The RF Jammer theory of operation is the same as an IED jammer in that they both involve sending out RF Jamming signals to cause radio interference and attack the radio receiver of an

Brand Name:MXT

Model Number:TDD4200T4400M 10W-28V

Place of Origin:China

High Frequency 4G Band 4200MHz 4400MHz Output Power 40dBm 10W RF Amplifier TD-LTE COFDM Product Description: The LTE Power Amplifier is designed to provide high efficiency amplification in COFDM signal applications. It is small in size (170*110*20mm) and...