Relays

Model Number:SPW35N60CFD

Place of Origin:original factory

CoolMOSTM Power Transistor Features PG-TO247 • New revolutionary high voltage technology • Intrinsic fast-recovery body diode • Extremely low reverse recovery charge • Ultra low gate charge • Extreme dv /dt rated • High peak current capability • Periodic ...

Model Number:AON7403

Place of Origin:original factory

AON7403 P-Channel Enhancement Mode Field Effect Transistor General Description The AON7403/L uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge with a 25V gate rating. This device is suitable for use as a load ...

Model Number:BCP54

Place of Origin:original factory

BCP54 NPN General Purpose Amplifier This device is designed for general purpose medium power amplifiers and switching circuits requiring collector currents to 1.2 A. Sourced from Process 38. Absolute Maximum Ratings* TA = 25°C unless otherwise noted Symbol...

Model Number:IRFB4229PBF

Place of Origin:original factory

PDP SWITCH IRFB4229PbF Features • Advanced Process Technology • Key Parameters Optimized for PDP Sustain, Energy Recovery and Pass Switch Applications • Low EPULSE Rating to Reduce Power Dissipation in PDP Sustain, Energy Recovery and Pass Switch ...

Model Number:TIP102

Place of Origin:original factory

TIP102 TIP107 COMPLEMENTARY SILICON POWER DARLICM GROUPON TRANSISTORS ■ STMicroelectronics PREFERRED SALESTYPES ■ COMPLEMENTARY PNP - NPN DEVICES ■ INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE APPLICATIONS ■ LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT ■ ...

Model Number:EMD3T2R

Place of Origin:original factory

General purpose (dual digital transistors) EMD3 / UMD3N / IMD3A Features 1) Both the DTA114E chip and DTC114E chip in a EMT or UMT or SMT package. 2) Mounting possible with EMT3 or UMT3 or SMT3 automatic mounting machines. 3) Transistor elements are ...

Model Number:ISL9V3040S3ST

Place of Origin:original factory

ISL9V3040D3S / ISL9V3040S3S / ISL9V3040P3 / ISL9V3040S3 EcoSPARKTM 300mJ, 400V, N-Channel Ignition IGBT General Description The ISL9V3040D3S, ISL9V3040S3S, ISL9V3040P3, and ISL9V3040S3 are the next generation ignition IGBTs that offer outstanding SCIS ...

Brand Name:TOS

Model Number:2SA1761

Place of Origin:Japan

2SA1761 Power Mosfet Transistor Electronics Components Chip IC Electronics • Low collector-emitter saturation voltage: VCE (sat) = −0.5 V (max) (IC = −0.5 A) • High-speed switching: tstg = 0.2 μs (typ.) • Complementary to 2SC4604. A part of stock list C.I ...

Brand Name:ONSEMI

Model Number:NTD5802NT4G

Place of Origin:Original

NTD5802NT4G Power MOSFET 40 V switching power mosfet Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to Minimize Switching Losses • MSL 1/260°C • AEC Q101 Qualified • 100% Avalanche ...

Model Number:NDS9952A

Place of Origin:original factory

NDS9952A Dual N & P-Channel Enhancement Mode Field Effect Transistor General Description These dual N- and P-channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very ...

Model Number:IRF7601PBF

Place of Origin:original factory

IRF7601 HEXFET® Power MOSFET • Generation V Technology • Ultra Low On-Resistance • N-Channel MOSFET • Very Small SOIC Package • Low Profile (<1.1mm) • Available in Tape & Reel • Fast Switching Description Fifth Generation HEXFETs from International ...

Brand Name:IRF

Model Number:PVT312L

Place of Origin:Original

ingle Pole, Normally Open, 0-250V, 190mA AC/DC Features " HEXFET Power MOSFET output " Bounce-free operation " 4,000 VRMS I/O isolation " Load current limiting " Linear AC/DC operation " Solid-State Reliability " UL recognized and BABT certified " ESD ...

Model Number:BC817-25

Place of Origin:original factory

SOT-23 BIPOLAR TRANSISTORS TRANSISTOR (NPN) FEATURES For general AF applications High collector current High current gain Low collector-emitter saturation voltage MECHANICAL DATA Case: Molded plastic Epoxy: UL 94V-O rate flame retardant Lead: MIL-STD-202E ...

Brand Name:IR

Model Number:IRLR2905TRPBF

Place of Origin:TAIWAN

IRLR2905TRPBF TO-252 Power Mosfet Transistor Integrated circuit Chip IC Electronics IRLR2905TRPBF ±15kV ESD Protected, +3V to +5.5V, 1Microamp, 250kbps, RS-232 Transmitters/Receivers Logic-Level Gate Drive Ultra Low On-Resistance Surface Mount (IRLR2905) ...

Model Number:Q6012LH5

Place of Origin:original factory

Alternistor Triacs (6 A to 40 A) General Description Teccor offers bidirectional alternistors with current ratings from 6 A to 40 A and voltages from 200 V to 1000 V as part of Teccor's broad line of thyristors. Teccor's alternistor is specifically ...

Brand Name:DIODES

Model Number:DDTC123ECA-7-F

Place of Origin:Original

NPN PRE-BIASED SMALL SIGNAL SOT-23 SURFACE MOUNT TRANSISTOR Features ►Epitaxial Planar Die Construction ►Complementary PNP Types Available (DDTA) ►Built-In Biasing Resistors, R1 = R2 ►Lead Free/RoHS Compliant (Note 2) Ch Mechanical Data Case: SOT-23 Case ...

Model Number:KA431AZTA

Place of Origin:original factory

Features • Programmable Output Voltage to 36 Volts • Low Dynamic Output Impedance 0.2Ω Typical • Sink Current Capability of 1.0 to 100mA • Equivalent Full-Range Temperature Coefficient of 50ppm/°C Typical • Temperature Compensated for Operation Over Full ...

Model Number:BC847C

Place of Origin:original factory

NPN general purpose Transistor BC847AT/BT/CT FEATURES Ideally suited for automatic insertion. For switching and AF amplifier application. APPLICATIONS General purpose switching and amplification. ORDERING INFORMATION Type No. Marking Package Code BC846AT/...

Brand Name:IRF

Model Number:IRF7329

Place of Origin:Thailand

HEXFET Power Mosfet Transistor , power mosfet module IRF7329 Trench Technology Ultra Low On-Resistance Dual P-Channel MOSFET Low Profile (<1.8mm) Available in Tape & Reel Lead-Free Description New P-Channel HEXFET® power MOSFETs from International ...

Brand Name:FAIRCHILD

Model Number:FDV305N

Place of Origin:Original

FDV305N 20V N-Channel PowerTrench MOSFET General Description This 20V N-Channel MOSFET uses Fairchild’s high voltage PowerTrench process. It has been optimized for power management applications. Applications • Load switch • Battery protection • Power ...