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| Categories | Semiconductor Substrate |
|---|---|
| Brand Name: | ZMKJ |
| Model Number: | 2inch AlN-sapphire |
| Place of Origin: | China |
| MOQ: | 5pcs |
| Price: | by case |
| Payment Terms: | T/T, Western Union, paypal |
| Supply Ability: | 50pcs/month |
| Delivery Time: | in 30days |
| Packaging Details: | single wafer container in cleaning room |
| substrate: | sapphire wafer |
| layer: | AlN template |
| layer thickness: | 1-5um |
| conductivity type: | N/P |
| Orientation: | 0001 |
| application: | high power/high frequency electronic devices |
| application 2: | 5G saw/BAW Devices |
| silicon thickness: | 525um/625um/725um |
| Company Info. |
| SHANGHAI FAMOUS TRADE CO.,LTD |
| Verified Supplier |
| View Contact Details |
| Product List |
2inch 4iinch 6Inch Sapphire based AlN templates AlN film on sapphire substrate sapphire window sapphire wafer
aracteristic SpecificationOther relaterd 4INCH GaN Template Specification
| GaN/ Al₂O₃ Substrates (4") 4inch | |||
| Item | Un-doped | N-type | High-doped N-type |
| Size (mm) | Φ100.0±0.5 (4") | ||
| Substrate Structure | GaN on Sapphire(0001) | ||
| SurfaceFinished | (Standard: SSP Option: DSP) | ||
| Thickness (μm) | 4.5±0.5; 20±2;Customized | ||
| Conduction Type | Un-doped | N-type | High-doped N-type |
| Resistivity (Ω·cm)(300K) | ≤0.5 | ≤0.05 | ≤0.01 |
| GaN Thickness Uniformity | ≤±10% (4") | ||
| Dislocation Density (cm-2) | ≤5×108 | ||
| Useable Surface Area | >90% | ||
| Package | Packaged in a class 100 clean room environment. | ||



| Crystal structure | Wurtzite |
| Lattice constant (Å) | a=3.112, c=4.982 |
| Conduction band type | Direct bandgap |
| Density (g/cm3) | 3.23 |
| Surface microhardness (Knoop test) | 800 |
| Melting point (℃) | 2750 (10-100 bar in N2) |
| Thermal conductivity (W/m·K) | 320 |
| Band gap energy (eV) | 6.28 |
| Electron mobility (V·s/cm2) | 1100 |
| Electric breakdown field (MV/cm) | 11.7 |

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