| Sign In | Join Free | My benadorassociates.com |
|
| Sign In | Join Free | My benadorassociates.com |
|
| Categories | Semiconductor Substrate |
|---|---|
| Brand Name: | zmkj |
| Model Number: | InP |
| Place of Origin: | CHINA |
| MOQ: | 3pcs |
| Price: | by case |
| Payment Terms: | T/T, Western Union |
| Supply Ability: | 500pcs |
| Delivery Time: | 2-4weeks |
| Packaging Details: | single wafer package in 1000-grade cleaning room |
| Material: | InP |
| growth method: | vFG |
| SIZE: | 2~ 4 INCH |
| Thickness: | 350-650um |
| application: | III-V direct bandgap semiconductor material |
| surface: | ssp/dsp |
| package: | single wafer box |
| Company Info. |
| SHANGHAI FAMOUS TRADE CO.,LTD |
| Verified Supplier |
| View Contact Details |
| Product List |
2inch InP wafers 3inch 4inch N/P TYPE InP Semiconductor Substrate Wafers Doped S+/ Zn+ /Fe + Indium Phosphide Based Epitaxial Wafer Single Crystal Indium Phosphide Wafers InP wafer 2 inch/3 inch/4 inch 350-650 um InP Crystal Wafer Dummy Prime Semiconductor Substrate
size (mm) | Dia50.8x0.5mm,10×10×0.5mm,10×5×0.5mm can be customized |
Ra | Surface roughness(Ra):<=5A |
Polish | Single or doubles side polished |
Package | 100 single or doubles side polished |
It has the advantages of high electronic limit drift speed, good
radiation resistance, and good heat conduction. Suitable for
manufacturing high-frequency, high-speed, high-power microwave
devices and integrated circuits.
Wafer Diameter(mm) | 50.8±0.3 | 76.2±0.3 | 100±0.3 |
Thickness(um) | 350±25 | 625±25 | 625±25 |
TTV-P/P(um) | ≤10 | ≤10 | ≤10 |
TTv-P/E(um) | ≤10 | ≤15 | ≤15 |
WARP(um) | ≤15 | ≤15 | ≤15 |
OF(mm) | 17±1 | 22±1 | 32.5±1 |
OF/IF(mm) | 7±1 | 12±1 | 18±11 |
| Description | Application | Wavelength Range |
| InP Based Epi-wafer | FP laser | ~1310nm; ~1550nm;~1900nm |
| DFB laser | 1270nm~1630nm | |
| Avalanche photo-detector | 1250nm~1600nm | |
| Photo-detector | 1250nm~1600nm/>2.0um (InGaAs absorptive layer);<1.4μm (InGaAsP absorptive layer) |
| Product Name |
| High Purity Indium Phosphide Polycrystalline Substrate Sheet |
| Iron Doped Indium Phosphide Crystal |
| N-type and P-type Indium Phosphide Crystal |
| 4 Inch Indium Phosphide Single Crystal Ingot |
| Indium Phosphide Based Epitaxial Wafer |
| Indium Phosphide Semiconductor Crystal Substrate |
| Indium Phosphide Single Crystal Substrate |
| Indium Antimonide Single Crystal Substrate |
| Indium Arsenic Single Crystal Substrate |
---FAQ –
A: Generally it is 5-10 days if the goods are in stock. or it is 15-20 days if the goods are not
in stock, it is according to quantity.
|
InAs Substrate 2inch 3inch 4inch 5inch 6inch Un/S/Zn Type N/P Polished DSP/SSP
MgO Wafer 111 100 Polished Magnesium Oxide Monocrystal Semiconductor Customized
2inch 4inch 6inch 8inch 12inch Si Wafer Silicon Wafer Polishing Undoped P Type N Type Semiconductor
InP wafer 2inch 3inch 4inch VGF P type N type Depant Zn S Fe Undoped Prime Grade Testing Grade
GaP Wafer 2inch N Type Undoped S Doped 100 DSP SSP CZ High Purity 5N 99.999%
2 Inch 1000nm AlN Film Silicon Based Aluminum Nitride Semiconductor Substrate
6 Inch Sapphire Based AlN Templates Wafer For 5G BAW Devices Sapphire wafer sapphire window
4" Sapphire Based GaN Templates Semiconductor Substrate
6" Silicon Based AlN Templates 500nm AlN Film On Silicon Substrate
30mm Dia AlN Single Crystal Semiconductor Substrate
