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High Purity Alumina Ceramic with Volume Resistivity of 10 4 Ohm*cm for Semiconductor Applications

Categories Alumina Ceramic
Place of Origin: Made In China,Zhejiang,Jinhua
Brand Name: Dayoo
MOQ: Negotiate
Price: Negotiate
Delivery Time: Negotiable
Payment Terms: Negotiable
Purity: 96%,99%
Materials: 92% alumina powder
Size: customized
Surface Finish: Polished
Shape: Customizable
Properties: electric insulation
Type: ceramic ball
Application: Industrial Ceramic
Thermal Expansion Coefficient: 8 x 10^-6 /K
Tensile Strength: 250 MPa
Max Operating Temperature: 1800°C
Alumina Content: 92% & 95%
Flexural Strength: 350 MPa
Maximum Use Temperature: 1,400°C
Packaging Details: Carton
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High Purity Alumina Ceramic with Volume Resistivity of 10 4 Ohm*cm for Semiconductor Applications

High Purity Alumina Ceramic with Volume Resistivity of 10 4 Ohm*cm for Semiconductor Applications


This series of semiconductor-specific alumina ceramic components are manufactured using 99.6% ultra-high purity Al₂O₃ material through precision tape casting and high-temperature sintering processes. The products exhibit excellent insulation, corrosion resistance, and dimensional stability, meeting SEMI Standard F47 cleanliness requirements.

Primary Semiconductor Applications

  • Wafer fabrication: Etching machine ceramic parts, diffusion boats

  • Packaging & testing: Probe card substrates, test sockets

  • Equipment components: Robot end effectors

  • Vacuum systems: Electrostatic chuck bases

  • Optical inspection: Lithography machine ceramic guides

Product Advantages

✓ Ultra-clean: Metal ion content <0.1ppm
✓ Precision dimensions: Tolerance ±0.05mm/100mm
✓ Plasma resistance: Etching rate <0.1μm/h
✓ Low outgassing: TML<0.1% CVCM<0.01%
✓ High reliability: Passes 1000 thermal cycles

Technical Specifications

ParameterSpecificationTest Standard
Material PurityAl₂O₃≥99.6%GDMS
Volume Resistivity>10¹⁴Ω·cmASTM D257
Dielectric Constant9.8@1MHzIEC 60250
Flexural Strength≥400MPaISO 14704
CTE7.2×10⁻⁶/°CDIN 51045
Surface RoughnessRa≤0.1μmISO 4287
OutgassingTML<0.1%ASTM E595

Semiconductor Manufacturing Process

  1. Material preparation:

    • Nano-grade Al₂O₃ powder (D50≤0.5μm)

    • High-purity ball milling (Y₂O₃-MgO sintering aids)

  2. Forming process:

    • Tape casting (thickness 0.1-5mm)

    • Isostatic pressing (200MPa)

  3. Sintering control:

    • Multi-stage atmosphere sintering (1600°C/H₂)

    • HIP post-treatment (1500°C/150MPa)

  4. Precision machining:

    • Laser processing (±5μm)

    • Ultrasonic drilling (aspect ratio 10:1)

  5. Cleaning & inspection:

    • Megasonic cleaning (Class 1 cleanroom)

    • SEMI F47 particle testing

Usage Guidelines

⚠️ Storage: Class 100 clean packaging
⚠️ Installation environment: 23±1°C RH45±5%
⚠️ Cleaning: Semiconductor-grade solvents only
⚠️ Handling: Avoid direct contact with functional surfaces

Semiconductor Services

  • Cleanliness verification: VDA19 test reports

  • Failure analysis: SEM/EDS microanalysis

  • Custom development: DFM co-design

FAQ

Q: How to ensure wafer contact surface cleanliness?
A: Triple protection:
① Plasma surface activation
② Vacuum packaging + N₂ storage
③ Pre-installation ionized air cleaning

Q: Performance in fluorine-based plasma?
A: Special treated version:
• Etching rate <0.05μm/h
• AlF₃ passivation layer
• 3x longer lifespan

Q: Maximum processable size?
A: Standard 200×200mm, special process up to 400×400mm.



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