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| Categories | Alumina Ceramic |
|---|---|
| Place of Origin: | Made In China,Zhejiang,Jinhua |
| Brand Name: | Dayoo |
| MOQ: | Negotiate |
| Price: | Negotiate |
| Delivery Time: | Negotiable |
| Payment Terms: | Negotiable |
| Purity: | 96%,99% |
| Materials: | 92% alumina powder |
| Size: | customized |
| Surface Finish: | Polished |
| Shape: | Customizable |
| Properties: | electric insulation |
| Type: | ceramic ball |
| Application: | Industrial Ceramic |
| Thermal Expansion Coefficient: | 8 x 10^-6 /K |
| Tensile Strength: | 250 MPa |
| Max Operating Temperature: | 1800°C |
| Alumina Content: | 92% & 95% |
| Flexural Strength: | 350 MPa |
| Maximum Use Temperature: | 1,400°C |
| Packaging Details: | Carton |
| Company Info. |
| Dayoo Advanced Ceramic Co.,Ltd |
| Verified Supplier |
| View Contact Details |
| Product List |
High Purity Alumina Ceramic with Volume Resistivity of 10 4 Ohm*cm for Semiconductor Applications
This series of semiconductor-specific alumina ceramic components are manufactured using 99.6% ultra-high purity Al₂O₃ material through precision tape casting and high-temperature sintering processes. The products exhibit excellent insulation, corrosion resistance, and dimensional stability, meeting SEMI Standard F47 cleanliness requirements.
Wafer fabrication: Etching machine ceramic parts, diffusion boats
Packaging & testing: Probe card substrates, test sockets
Equipment components: Robot end effectors
Vacuum systems: Electrostatic chuck bases
Optical inspection: Lithography machine ceramic guides
✓ Ultra-clean: Metal ion content <0.1ppm
✓ Precision dimensions: Tolerance ±0.05mm/100mm
✓ Plasma resistance: Etching rate <0.1μm/h
✓ Low outgassing: TML<0.1% CVCM<0.01%
✓ High reliability: Passes 1000 thermal cycles
| Parameter | Specification | Test Standard |
|---|---|---|
| Material Purity | Al₂O₃≥99.6% | GDMS |
| Volume Resistivity | >10¹⁴Ω·cm | ASTM D257 |
| Dielectric Constant | 9.8@1MHz | IEC 60250 |
| Flexural Strength | ≥400MPa | ISO 14704 |
| CTE | 7.2×10⁻⁶/°C | DIN 51045 |
| Surface Roughness | Ra≤0.1μm | ISO 4287 |
| Outgassing | TML<0.1% | ASTM E595 |
Material preparation:
Nano-grade Al₂O₃ powder (D50≤0.5μm)
High-purity ball milling (Y₂O₃-MgO sintering aids)
Forming process:
Tape casting (thickness 0.1-5mm)
Isostatic pressing (200MPa)
Sintering control:
Multi-stage atmosphere sintering (1600°C/H₂)
HIP post-treatment (1500°C/150MPa)
Precision machining:
Laser processing (±5μm)
Ultrasonic drilling (aspect ratio 10:1)
Cleaning & inspection:
Megasonic cleaning (Class 1 cleanroom)
SEMI F47 particle testing
⚠️ Storage: Class 100 clean packaging
⚠️ Installation environment: 23±1°C RH45±5%
⚠️ Cleaning: Semiconductor-grade solvents only
⚠️ Handling: Avoid direct contact with functional surfaces
Cleanliness verification: VDA19 test reports
Failure analysis: SEM/EDS microanalysis
Custom development: DFM co-design
Q: How to ensure wafer contact surface cleanliness?
A: Triple protection:
① Plasma surface activation
② Vacuum packaging + N₂ storage
③ Pre-installation ionized air cleaning
Q: Performance in fluorine-based plasma?
A: Special treated version:
• Etching rate <0.05μm/h
• AlF₃ passivation layer
• 3x longer lifespan
Q: Maximum processable size?
A: Standard 200×200mm, special process up to 400×400mm.




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