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| Categories | Alumina Ceramic |
|---|---|
| Place of Origin: | Made In China,Zhejiang,Jinhua |
| Brand Name: | Dayoo |
| MOQ: | Negotiate |
| Price: | Negotiate |
| Delivery Time: | Negotiable |
| Payment Terms: | Negotiable |
| Max Operating Temperature: | 1700°C |
| Flexural Strength: | 350 MPa |
| Dielectric Loss: | 0.0002 |
| Method: | lsostatic presure |
| Dimensional Tolerance: | ±0.001 mm |
| Machinability: | Difficult |
| Mechanical Strength: | High |
| Alumina Content: | 95% |
| Tensile Strength: | 200 MPa |
| Type: | Alumina Ceramic Parts |
| Size: | Customized |
| Dielectric Constant: | 9.8 |
| Materials: | 92% alumina powder |
| Surface Finish: | Polished |
| Thermal Expansion Coefficient: | 8.5 x 10^-6 /K |
| Packaging Details: | Carton |
| Company Info. |
| Dayoo Advanced Ceramic Co.,Ltd |
| Verified Supplier |
| View Contact Details |
| Product List |
Insulation Performance Alumina Ceramic Bases For Precision Measurement Equipment And Industrial Inspection
These alumina ceramic support bases are manufactured using 99.6% high-purity Al₂O₃ material, specifically designed for semiconductor, optical, and precision measurement equipment. Featuring ultra-high flatness of 0.01mm/m and a thermal expansion coefficient of 7.2×10⁻⁶/℃, the products maintain exceptional dimensional stability in extreme temperatures (-60℃~1500℃) and vacuum environments (≤10⁻⁸Pa).
Semiconductor Equipment: Lithography wafer stages, etching reactor chamber bases
Precision Optics: Laser interferometer reference platforms, space telescope mirror mounts
Analytical Instruments: Electron microscope sample stages, mass spectrometer ion source supports
Industrial Inspection: CMM machine bases, roundness tester turntables
New Energy: Fuel cell stack supports, photovoltaic coating equipment carriers
| Characteristic | Technical Specification | Application Value |
|---|---|---|
| Thermal Stability | ΔL/L<0.001%/℃ | Eliminates thermal drift errors |
| Vacuum Compatibility | Outgassing rate<10⁻¹¹Pa·m³/s | Maintains ultra-high vacuum |
| Mechanical Strength | Flexural strength>400MPa | Supports precision components without deformation |
| Insulation Performance | Volume resistance>10¹⁶Ω·cm | Eliminates electrical leakage interference |
| Parameter | Standard Type | High-Precision Type |
|---|---|---|
| Material Purity | 99.6% Al₂O₃ | 99.9% Al₂O₃ |
| Flatness | ≤0.02mm/m | ≤0.005mm/m |
| Surface Roughness | Ra0.1μm | Ra0.025μm |
| Thermal Expansion Coefficient | 7.5×10⁻⁶/℃ | 7.2×10⁻⁶/℃ |
| Vacuum Leak Rate | <10⁻¹⁰mbar·L/s | <10⁻¹¹mbar·L/s |
Powder Processing: 0.1μm high-purity powder with spray granulation
Forming Process: Isostatic pressing (300MPa) combined with CNC green machining
Sintering Technology: Gradient sintering at 1700℃ in hydrogen atmosphere
Precision Machining:
5-axis grinding (±0.002mm)
Magnetorheological polishing (surface accuracy λ/20@632.8nm)
Cleanroom Processing: Assembly completed in Class 100 cleanroom
Full Inspection: Laser interferometer + CMM complete dimensional inspection
Installation Requirements:
✓ Use torque wrench (recommended value 1.5±0.2N·m)
✓ Use dedicated cleanroom tools
✓ Recommended thermal matching pre-adjustment (temperature gradient
<2℃/min)
Environmental Limitations:
✗ Avoid contact with hydrofluoric acid
✗ Avoid thermal shocks >200℃/min
✗ Not suitable for continuous >1600℃ oxidizing environments
Technical Support: Free FEA stress analysis
Rapid Response: 72-hour expedited service
Traceability Management: 10-year complete production records
Certification Support: SEMI/FDA/ISO certification documents provided
Q: How to ensure thermal matching with silicon carbide components?
A: CTE gradient transition design available (adjustable
7.2-4.5×10⁻⁶/℃)
Q: Maximum processable dimensions?
A: Current technical limit 500×500×100mm (special tooling required)
Q: Is conductive modification supported?
A: Customizable antistatic versions with surface resistance
10⁴-10¹⁰Ω
Q: How is wafer-level cleanliness guaranteed?
A: Final sterilization with VHP (vaporized hydrogen peroxide)

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