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Ultra-High Thermal Conductivity Silicon Nitride Ceramics For Power Electronics And New Energy Vehicles

Categories Silicon Nitride Ceramics
Place of Origin: Made In China,Zhejiang,Jinhua
Brand Name: Dayoo
MOQ: Negotiate
Price: Negotiate
Delivery Time: Negotiable
Payment Terms: Negotiable
Electrical Insulation: Yes
Max Operating Temperature: 1200°C
Highest Melting Point: 1900℃
Surface Finish: Smooth
Features: High temperature and high strength
Color: Grey
Density: 3.2 g/cm3
Chemical Inertness: High
Drawing Format: 2D/(PDF/CAD)3D(IGES/STEP)
Application: Grinding Industrial
Low Thermal Expansion: Yes
Heating Wire: NiCr80/20
Coefficient Of Friction: 0.15
Hardness: 9 Mohs
Corrosion Resistance: High
Packaging Details: Carton
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Ultra-High Thermal Conductivity Silicon Nitride Ceramics For Power Electronics And New Energy Vehicles

Ultra-High Thermal Conductivity Silicon Nitride Ceramics for Power Electronics and New Energy Vehicles


Silicon nitride (Si₃N₄) ceramic substrates are manufactured using 99.5% high-purity raw materials through tape casting and gas pressure sintering processes. The products exhibit excellent thermal conductivity, high strength and reliability, making them an ideal thermal management solution for next-generation high-power electronic devices.

Primary Applications

  • Power electronics: IGBT, SiC power modules

  • New energy vehicles: Motor controllers, OBC

  • Rail transportation: Traction converters

  • PV inverters: High-power photovoltaic modules

  • 5G communications: Base station RF devices

Key Advantages

✓ Ultra-high thermal conductivity: ≥90W/(m·K)
✓ High strength & toughness: Flexural strength ≥600MPa
✓ Low thermal expansion: CTE 3.2×10⁻⁶/°C
✓ Excellent insulation: Volume resistivity >10¹⁴Ω·cm
✓ Superior reliability: Passes 1000 cycles of -40~150°C thermal shock test

Technical Specifications

ParameterSpecificationTest Standard
Material PuritySi₃N₄≥99.5%GB/T 16535
Dimensional Accuracy±0.1%IPC-4101
Thermal Conductivity≥90W/(m·K)ASTM E1461
Flexural Strength≥600MPaISO 14704
CTE3.2×10⁻⁶/°CDIN 51045
Dielectric Strength≥25kV/mmIEC 60672
Surface RoughnessRa≤0.2μmISO 4287

Manufacturing Process

  1. Material preparation: Nano-grade Si₃N₊ powder modification

  2. Tape casting: Producing 0.1-1.2mm green tapes

  3. Isostatic pressing: 200MPa densification

  4. Gas pressure sintering: 1850°C/10MPa N₂ atmosphere

  5. Precision machining: Laser cutting, drilling

  6. Surface treatment: Double-side polishing to Ra≤0.2μm

Usage Guidelines

⚠️ Storage: Vacuum packed, moisture and dust proof
⚠️ Soldering: Recommended active metal brazing
⚠️ Mounting stress: Control <50MPa assembly stress
⚠️ Thermal design: Recommended with thermal grease

After-Sales Service

  • Warranty: 36-month quality guarantee

  • Technical support: Free thermal design consultation

  • Testing service: Third-party test reports available

  • Customization: Special sizes and structures

FAQ

Q: Advantages vs AlN substrates?
A: Main advantages:
① 3-5x higher strength
② Better thermal shock resistance
③ Higher reliability

Q: Maximum processable size?
A: Standard 200×200mm, special process up to 300×300mm.

Q: Recommended metallization?
A: Options include:
• DBC direct bonding copper
• AMB active metal brazing
• Thick film printing


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