Wafer Bonding Equipment Room Temperature Bondin Hydrophilic Bonding Si-SiC Si-Si Bonding 2 -12 Inch

Wafer Bonding Equipment Room Temperature Bondin Hydrophilic Bonding Si-SiC Si-Si Bonding 2 -12 inch

Wafer Bonding System Overview

Wafer Bonding Equipment is a high-end bonding equipment specifically designed for silicon carbide (SiC) power device manufacturing, supporting 2 to 12-inch wafer specifications. Wafer Bonding Equipment incorporates advanced room-temperature direct bonding and surface-activated bonding technologies, with special optimization for SiC-SiC and SiC-Si heterogeneous bonding processes. Featuring an integrated high-precision optical alignment system (≤±2 μm) and closed-loop temperature/pressure control, it ensures the high bonding strength (≥2 J/m²) and superior interface uniformity required for power semiconductor device fabrication.

Wafer Bonding System Technical Specifications

Core Functional Parameters:

Intelligent Control System:

· Industrial-grade touch HMI

· ≥50 stored process recipes

· Real-time pressure-temperature closed-loop feedback

Safety Protection System:

· Triple interlock protection (pressure/temperature/vacuum)

· Emergency braking system

· Class 100 cleanroom compatibility

Extended Functions:

· Optional robotic wafer handling

· SECS/GEM communication protocol support

· Integrated inline inspection module

Wafer Bonding Equipment is specifically designed for R&D and mass production of third-generation semiconductors. Wafer Bonding Equipment modular architecture enables high-reliability bonding for SiC-based power devices. The innovative plasma pretreatment technology significantly enhances interfacial bonding strength (≥5 J/m²), while the ultra-high vacuum environment ensures contaminant-free bonding interfaces. The intelligent temperature-pressure control system, combined with submicron alignment accuracy, provides wafer-level bonding solutions for HEMT, SBD and other devices.

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Compatible Materials

Applications

· MEMS Device Packaging: Wafer Bonding Equipment is suitable for hermetic sealing of microelectromechanical systems (MEMS) such as accelerometers and gyroscopes.

· CIS Image Sensors: Wafer Bonding Equipment enables low-temperature bonding between CMOS wafers and optical glass substrates.

· 3D IC Integration: Wafer Bonding Equipment supports room-temperature stacking bonding for through-silicon via (TSV) wafers.

· Compound Semiconductor Devices: Wafer Bonding Equipment facilitates epitaxial layer transfer for GaN/SiC power devices.

· Biochip Fabrication: Wafer Bonding Equipment provides low-temperature packaging solutions for microfluidic chips.

Machining effect——Bonding of LiNbO 3 wafer and SiC wafer

( (a) Photograph of LiNbO3/SiC wafers bonded at room temperature. (b) Photograph of diced 1 × 1 mm chips. )

( (a) Cross-sectional TEM image of the LiNbO₃/SiC bonding interface (b) Magnified view of (a) )