Slkor SL25T120FL

Categories	Single IGBTs
Pd - Power Dissipation:	350W
Td(off):	216ns
Td(on):	93ns
Collector-Emitter Breakdown Voltage (Vces):	1.2kV
Reverse Transfer Capacitance (Cres):	80pF
Input Capacitance(Cies):	1.6nF
IGBT Type:	FS (Field Stop)
Gate-Emitter Threshold Voltage (Vge(th)@Ic):	4.5V@600uA
Gate Charge(Qg):	120nC@15V
Output Capacitance(Coes):	120pF
Reverse Recovery Time(trr):	236ns
Switching Energy(Eoff):	1mJ
Turn-On Energy (Eon):	2.8mJ
Description:	IGBT 1.2kV 25A Through Hole TO-247
Mfr. Part #:	SL25T120FL
Model Number:	SL25T120FL
Package:	TO-247

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Hefei Purple Horn E-Commerce Co., Ltd.

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Features:

Applications:

SLKOR

TO-247

RoHS

Parameter	Symbol	Unit	Tc=25	Tc=100	Note
Collector-Emitter Voltage	Vces	V	1200	-	-
Collector Current-continuous	Ic	A	50	25	-
Collector Current-pulse	ICM	A	60	-	1
Diode forward current	IF	A	-	25	-
Gate-Emitter Voltage	VGES	V	20	-	-
Turn-off safe area	-	A	-	60	-
Power Dissipation	PD	W	350	-	-
Diode Forward Current	-	A	-	25	-
Operating and Storage Temperature Range	TJ,TSTG		-55~+150	-	-
Maximum Lead Temperature for Soldering Purposes	TL		300	-	-

Parameter	Symbol	Unit	Min	Typ	Max	Test Conditions
Collector-Emitter Voltage	BVCES	V	1200	-	-	IC=500uA,VGE=0V
Breakdown Voltage Temperature Coefficient	BVCES/TJ	V/	-	0.6	-	IC=1mA,referenced to 25
Zero Gate Voltage Collector Current	ICES	mA	-	-	0.2	VCE=1200V,VGE=0 V,TC=25
Zero Gate Voltage Collector Current	ICES	mA	-	-	2	TC=100
Zero Gate Voltage Collector Current	ICES	mA	-	-	2.5	TC=150
Gate-body leakage current, forward	IGESF	nA	-	-	-100	VCE=0V,VGE=-20V
Gate-Emitter Threshold Voltage	VGE(th)	V	4.5	-	6.5	VCE=VGE,lc=600u A
Collector-Emitter saturation Voltage	VCESAT	V	-	1.75	2.5	VGE=15V,IC=25A,Tc=25
Collector-Emitter saturation Voltage	VCESAT	V	-	2	-	Tc=150
Short Collector current	Ic(sc)	A	-	160	-	VGE=15V,VCE=600V,tsc<10us,Tc=25, Note 2
Input capacitance	Cies	pF	-	1600	2400	VCE=25V, VGE=0V, f=1.0MHZ
Output capacitance	Coes	pF	-	120	190	VCE=25V, VGE=0V, f=1.0MHZ
Reverse transfer capacitance	Cres	pF	-	80	130	VCE=25V, VGE=0V, f=1.0MHZ
Turn-On delay time	td(on)	ns	-	93	-	VCE=600V,Ic=25A, RG=10,Tc=25Inductive Load, Note 3
Turn-On rise time	tr	ns	-	77	-	VCE=600V,Ic=25A, RG=10,Tc=25Inductive Load, Note 3
Turn-off delay time	td(off)	ns	-	216	-	VCE=600V,Ic=25A, RG=10,Tc=25Inductive Load, Note 3
Turn-off Fall time	tf	ns	-	108	-	VCE=600V,Ic=25A, RG=10,Tc=25Inductive Load, Note 3
Turn-on energy	Eon	mJ	-	2.8	-	VCE=600V,Ic=25A, RG=10,Tc=25Inductive Load, Note 3
Turn-off energy	Eoff	mJ	-	1.0	-	VCE=600V,Ic=25A, RG=10,Tc=25Inductive Load, Note 3
Total switching Energy	Etotal	mJ	-	3.8	-	VCE=600V,Ic=25A, RG=10,Tc=25Inductive Load, Note 3
Total Gate Charge	Qg	nC	-	120	-	VCE=600V,Ic=25A ,VGE=15V, Note 3,4

Parameter	Symbol	Unit	Min	Typ	Max	Test Conditions
Diode Forward Voltage	VF	V	-	1.77	2.8	VGE=0V,IF=25A
Diode Reverse recovery time	trr	ns	-	236	-	VGE=0V,VR=800V,IF=25A,dl=/dt=200/us, Note 4
Reverse recovery charge	Qrr	uC	-	1.3	-	VGE=0V,VR=800V,IF=25A,dl=/dt=200/us, Note 4

Parameter	Symbol	Tests conditions	Min	Typ	Max	Units
Thermal Resistance,Junction to Case	Rth(j-c)	-	-	-	0.4	/W
Thermal Resistance,Junction to Ambitent	Rth(j-A)	-	-	-	40	/W

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