Slkor SL75T120FZ

Categories	Single IGBTs
Pd - Power Dissipation:	625W
Td(off):	130ns
Td(on):	205ns
Operating Temperature:	-55℃~+150℃@(Tj)
Collector-Emitter Breakdown Voltage (Vces):	1.2kV
Input Capacitance(Cies):	7.348nF@30V
Gate-Emitter Threshold Voltage (Vge(th)@Ic):	4.5V@250uA
Gate Charge(Qg):	270nC@75A,15V
Reverse Recovery Time(trr):	530ns
Switching Energy(Eoff):	6mJ
Turn-On Energy (Eon):	19.1mJ
Description:	IGBT 1.2kV 115A 625W Through Hole TO-264
Mfr. Part #:	SL75T120FZ
Model Number:	SL75T120FZ
Package:	TO-264

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Hefei Purple Horn E-Commerce Co., Ltd.

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Product Details
Company Profile

Slkor SL75T120FZ

Product Overview

Features:

VCE(sat)(typ.)= 1.85V@VGE= 15V,IC= 75A
High speed switching
Higher system efficiency
Soft current turn-off waveforms

Applications:

UPS
AC & DC motor controls
General purpose inverter

BrandSLKOR

ModelSL75T120FZ

Package TypeTO-264, TO-247plus

Parameter	Symbol	Tests conditions	Min	Typ	Max	Unit
Collector-Emmiter Voltage	Vce				1200	V
Collector Current-continuous (T=25)	IC				115	A
Collector Current-continuous (T=100)	IC				75	A
Diode forward current (Tc=100)	IF				75	A
Collector Current-pulse (note 1)	ICM				230	A
Gate-EMMiter Voltage	VGES			30		V
Power Dissipation (TO-264, Tc=25)	PD				625	W
Power Dissipation (TO-264, Tc=100)	PD				250	W
Power Dissipation (TO-247plus, Tc=25)	PD				882	W
Power Dissipation (TO-247plus, Tc=100)	PD				441	W
Operating and Storage Temperature Range	TJ,TSTG		-55		+150
Diode Maximum Forward Current (Note 1)	IFM				250	A
Short Circuit Withstand Time	tsc				10	us
Maximum Lead Temperature for Soldering Purposes	TL				300
Collector-Emmiter Voltage	BVCES	Ic=250uA,VGE=0V	1200	-	-	V
Zero Gate Voltage Collector Current	ICES	VCE=1200V,VGE=0V, Tc=25	-	-	100	A
Gate-body leakage current, forward	IGESF	VCE=0V,VGE=30V	-	-	100	nA
Gate-body leakage current, reverse	IGESR	VCE=0V,VGE=-30V	-	-	-100	nA
Gate Threshold Voltage	VGE(th)	VCE=VGE,Ic=250uA	4.5	-	6.5	V
Collector-Emmiter saturation Voltage	VCESAT	VGE=15V lc=75A	-	1.85	2.5	V
Collector-Emmiter saturation Voltage	VCESAT	VGE=15V lc=75A TC=125	-		2.25	V
Collector-Emmiter saturation Voltage	VCESAT	VGE=15V lc=115A	-		2.15	V
Input capacitance	Cies	VCE=30V, VGE=0V, f=1.0MHZ	-	7348	-	pF
Output capacitance	Coes		-	312	-	pF
Reverse transfer capacitance	Cres		-	38	-	pF
Turn-on delay time (Tc=25)	td(on)	VCC=600V,Ic=75A, RG=10VGE=15V, Inductive Load	-	205	-	ns
Turn-On rise time (Tc=25)	tr	VCC=600V,Ic=75A, RG=10VGE=15V, Inductive Load	-	470	-	ns
Turn-Off delay time (Tc=25)	td(off)	VCC=600V,Ic=75A, RG=10VGE=15V, Inductive Load	-	130	-	ns
Turn-Off Fall time (Tc=25)	tf	VCC=600V,Ic=75A, RG=10VGE=15V, Inductive Load	-	295	-	ns
Turn-on switching Loss (Tc=25)	Eon	VCC=600V,Ic=75A, RG=10VGE=15V, Inductive Load	-	19.1	-	mJ
Turn-off switching Loss (Tc=25)	Eoff	VCC=600V,Ic=75A, RG=10VGE=15V, Inductive Load	-	6	-	mJ
Total switching Loss (Tc=25)	Ets	VCC=600V,Ic=75A, RG=10VGE=15V, Inductive Load	-	25.1	-	mJ
Turn-on delay time (Tc=125)	td(on)	VCC=600V,Ic=75A, RG=10VGE=15V, Inductive Load	-	190	-	ns
Turn-On rise time (Tc=125)	tr	VCC=600V,Ic=75A, RG=10VGE=15V, Inductive Load	-	365	-	ns
Turn-Off delay time (Tc=125)	td(off)	VCC=600V,Ic=75A, RG=10VGE=15V, Inductive Load	-	170	-	ns
Turn-Off Fall time (Tc=125)	tf	VCC=600V,Ic=75A, RG=10VGE=15V, Inductive Load	-	345	-	ns
Turn-on switching Loss (Tc=125)	Eon	VCC=600V,Ic=75A, RG=10VGE=15V, Inductive Load	-	15.7	-	mJ
Turn-off switching Loss (Tc=125)	Eoff	VCC=600V,Ic=75A, RG=10VGE=15V, Inductive Load	-	7.4	-	mJ
Total switching Loss (Tc=125)	Ets	VCC=600V,Ic=75A, RG=10VGE=15V, Inductive Load	-	23.1	-	mJ
Total Gate Charge	Qg	VCC=600V, lc=75A VGE=15V	-	270	-	nC
Gate to emitter charge	Qge	VCC=600V, lc=75A VGE=15V	-	105	-	nC
Gate to collector charge	Qgc	VCC=600V, lc=75A VGE=15V	-	140	-	nC
Drain-Source Diode Forward Voltage	VF	IF=75A	-	2.1	3.2	V
Diode Reverse recovery time	trr	VCE=400V IF=75A dl=/dt=200A/us	-	530	-	ns
Reverse recovery charge	Qrr	VCE=400V IF=75A dl=/dt=200A/us	-	1890	-	nC
Diode Reverse recovery Current	IRRM	VCE=400V IF=75A dl=/dt=200A/us	-	8.5	-	A
Thermal Resistance,Junction to Case (IGBT, TO-264)	Rth(j-c)		-	0.2	-	/W
Thermal Resistance,Junction to Case (IGBT, TO-247 plus)	Rth(j-c)		-	0.17	-	/W
Thermal Resistance,Junction to Case (Diode, TO-264)	Rth(j-c)		-	0.4	-	/W
Thermal Resistance,Junction to Case (Diode, TO-247 plus)	Rth(j-c)		-	0.32	-	/W
Thermal Resistance,Junction to Ambient (TO-264)	Rth(j-A)		-	25	-	/W
Thermal Resistance,Junction to Ambient (TO-247 plus)	Rth(j-A)		-	40	-	/W

2409302302_Slkor-SL75T120FZ_C5375318.pdf

Slkor SL75T120FZ

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