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| Categories | Field Effect Transistor |
|---|---|
| Brand Name: | JC |
| Model Number: | OSPF2N60 |
| Certification: | RoHS |
| Place of Origin: | Jiangxi, China |
| MOQ: | Negotiable |
| Price: | Negotiated |
| Payment Terms: | Telegraphic Transfer in Advance (Advance TT, T/T) |
| Supply Ability: | 15,000,000PCS Per Day |
| Delivery Time: | 1 - 2 Weeks |
| Packaging Details: | Boxed |
| Name: | N Channel Transistor |
| Drain-Source Voltage: | 600V |
| Gate-Source Voltage-Continuous: | ±30V |
| Drain Current-Continuous（Note 2）: | 2A |
| Drain Current-Single Plused（Note 1）: | 8A |
| Power Dissipation （Note 2): | 23W |
High Input Impedance N Channel Transistor , Field Emission Transistor 600V
N Channel Transistor Features
N Channel Transistor Applications
Absolute Maximum Ratings (Tc=25°C)
| Symbol | Parameters | Ratings | Unit |
| VDSS | Drain-Source Voltage | 600 | V |
| VGS | Gate-Source Voltage-Continuous | ±30 | V |
| ID | Drain Current-Continuous(Note 2) | 2 | A |
| IDM | Drain Current-Single Plused(Note 1) | 8 | A |
| PD | Power Dissipation (Note 2) | 23 | W |
| Tj | Max.Operating junction temperature | 150 | ℃ |
Electrical characteristics (Tc=25°C unless otherwise noted)
| Symbol | Parameters | Min | Typ | Max | Units | Conditions | ||
| Static Characteristics | ||||||||
| BVDSS | Drain-Source Breakdown VoltageCurrent (Note 1) | 600 | -- | -- | V | ID=250µA,VGS=0V,TJ=25°C | ||
| VGS(th) | Gate Threshold Voltage | 2.0 | -- | 4.0 | V | VDS=VGS,ID=250μA | ||
| RDS(on) | Drain-Source On-Resistance | -- | 3.6 | 4.0 | Ω | VGS=10V,ID=1A | ||
| IGSS | Gate-Body Leakage Current | -- | -- | ±100 | nA | VGS=±30V,VDS=0 | ||
| IDSS | Zero Gate Voltage Drain Current | -- | -- | 1 | μA | VDS=600V,VGS=0 | ||
| gfs | Forward Transconductance | 1.0 | -- | -- | S | VDS=15V,ID=1A | ||
| Switching Characteristics | ||||||||
| Td(on) | Turn-On Delay Time | -- | 40 | 60 | ns | VDS=300V,ID=2A, RG=25Ω(Note 2) | ||
| Tr | Rise Time | -- | 35 | 55 | ns | |||
| Td(off) | Turn-Off Delay Time | -- | 70 | 95 | ns | |||
| Tf | Fall Time | -- | 45 | 65 | ns | |||
| Qg | Total Gate Charge | -- | 9 | 15 | nC | VDS=480V,VGS=10V, ID=2A(Note 2) | ||
| Qgs | Gate-Source Charge | -- | 1.5 | -- | nC | |||
| Qgd | Gate-Drain Charge | -- | 4.5 | -- | nC | |||
| Dynamic Characteristics | ||||||||
| Ciss | Input Capacitance | -- | 260 | 350 | pF | VDS=25V,VGS=0, f=1MHz | ||
| Coss | Output Capacitance | -- | 38 | 50 | pF | |||
| Crss | Reverse Transfer Capacitance | -- | 8 | 20 | pF | |||
| IS | Continuous Drain-Source Diode Forward Current(Note 2) | -- | -- | 2 | A | |||
| VSD | Diode Forward On-Voltage | -- | -- | 1.4 | V | IS=2A,VGS=0 | ||
| Rth(j-c) | Thermal Resistance, Junction to Case | -- | -- | 5.5 | ℃/W | |||
Our Service
1. Efficient Servicer: Professional and Efficient services, Feedback in 24 hours. Full range products for choice.
2. Factory Choice: We are professional supplier. OEM / ODM are Available. We also supply search service for you if you need . We have professional purchasing department to supply the latest goods and best seller products.
3. QC Service: Great Quality Check, We know how to do good check quality. We have 19 years experience professional QC team.
4. Logistic Service: We would like to assist our customer to make QC + collect goods from other supplier.
5. Long-Term Service: We are looking for long-term business PARTNER! So we supply excellent service and can design as your request.
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