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| Categories | Field Effect Transistor |
|---|---|
| Brand Name: | JC |
| Model Number: | OSPF12N65C |
| Certification: | RoHS |
| Place of Origin: | Jiangxi, China |
| MOQ: | Negotiable |
| Price: | Negotiated |
| Payment Terms: | Telegraphic Transfer in Advance (Advance TT, T/T) |
| Supply Ability: | 15,000,000PCS Per Day |
| Delivery Time: | 1 - 2 Weeks |
| Packaging Details: | Boxed |
| Name: | Power Jfet Transistor |
| Drain-Source Voltage: | 650V |
| Gate-Source Voltage-Continuous: | ±30V |
| Drain Current-Continuous（Note 2）: | 12A |
| Drain Current-Single Plused（Note 1）: | 48A |
| Power Dissipation （Note 2): | 50W |
OEM High Power Jfet Transistor , Npn Transistor Amplifier 650V
Power Jfet Transistor Features
Power Jfet Transistor Applications
Absolute Maximum Ratings (Tc=25°C)
| Symbol | Parameters | Ratings | Unit |
| VDSS | Drain-Source Voltage | 650 | V |
| VGS | Gate-Source Voltage-Continuous | ±30 | V |
| ID | Drain Current-Continuous(Note 2) | 12 | A |
| IDM | Drain Current-Single Plused(Note 1) | 48 | A |
| PD | Power Dissipation (Note 2) | 51 | W |
| Tj | Max.Operating junction temperature | 150 | ℃ |
Electrical characteristics (Tc=25°C unless otherwise noted)
| Symbol | Parameters | Min | Typ | Max | Units | Conditions | ||
| Static Characteristics | ||||||||
| BVDSS | Drain-Source Breakdown VoltageCurrent (Note 1) | 650 | -- | -- | V | ID=250µA,VGS=0V,TJ=25°C | ||
| VGS(th) | Gate Threshold Voltage | 2.0 | -- | 4.0 | V | VDS=VGS,ID=250μA | ||
| RDS(on) | Drain-Source On-Resistance | -- | 0.65 | 0.68 | Ω | VGS=10V,ID=6A | ||
| IGSS | Gate-Body Leakage Current | -- | -- | ±100 | nA | VGS=±30V,VDS=0 | ||
| IDSS | Zero Gate Voltage Drain Current | -- | -- | 1 | μA | VDS=650V,VGS=0 | ||
| gfs | Forward Transconductance | 3.6 | -- | -- | S | VDS=15V,ID=5A | ||
| Switching Characteristics | ||||||||
| Td(on) | Turn-On Delay Time | -- | 30 | 75 | ns | VDS=325V,ID=12A, RG=25Ω(Note 2) | ||
| Tr | Rise Time | -- | 115 | 240 | ns | |||
| Td(off) | Turn-Off Delay Time | -- | 95 | 205 | ns | |||
| Tf | Fall Time | -- | 85 | 180 | ns | |||
| Qg | Total Gate Charge | -- | 42 | 55 | nC | VDS=520,VGS=10V, ID=12A(Note 2) | ||
| Qgs | Gate-Source Charge | -- | 8.5 | -- | nC | |||
| Qgd | Gate-Drain Charge | -- | 21.5 | -- | nC | |||
| Dynamic Characteristics | ||||||||
| Ciss | Input Capacitance | -- | 1460 | -- | pF | VDS=25V,VGS=0, f=1MHz | ||
| Coss | Output Capacitance | -- | 205 | -- | pF | |||
| Crss | Reverse Transfer Capacitance | -- | 24.8 | -- | pF | |||
| IS | Continuous Drain-Source Diode Forward Current(Note 2) | -- | -- | 12 | A | |||
| VSD | Diode Forward On-Voltage | -- | -- | 1.4 | V | IS=12A,VGS=0 | ||
| Rth(j-c) | Thermal Resistance, Junction to Case | -- | -- | 3.65 | ℃/W | |||
Our Company
Shenzhen Canyi Electronics Technology Co., Ltd. was established in 2000. After more than ten years of development,
it has become a professional agent of well-known electronic
component brands at home and abroad.
Our Advantage:
1. Electronic component specialist and professional.
2. Strong R & D team, experienced research staffs
3. Strong and consistent quality control, same standard as of RoHS.
4. Elite sales team with more than 5 years international trading
experience individually.
5. Strong technical support to help customers choose the most
appropriate products.
6. Be proud of the product and the competitive price.
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