110a through hole power mosfet

Brand Name:Infineon Technologies

Model Number:IRF3205PBF

Place of Origin:Original

...Power Transistors 55V 110A 8.0mΩ Power MOSFET Npn Power Transistor Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs...

Brand Name:Infineon Technologies

Model Number:SPA04N80C3

Place of Origin:China

Infineon MOSFET N-Ch 800V 4A TO220FP-3 CoolMOS C3, Replacement for CoolMOS™ C3 is CoolMOS™ P7 800V CoolMOS™ C3 is Infineon's third series of CoolMOS™ with market entry in 2001. C3 is the "working horse" of the portfolio. Summary of Features: Low specific...

Place of Origin:China

Brand Name:ONSEMI

Model Number:NVMFS5C450NL

High Power MOSFET NVMFS5C450NL Single N-Channel Power MOSFET 40V, 110A, 2.8mΩ [Who we are?] Sunbeam Electronics (Hong Kong) Co. Ltd is focus on semi-conductors sourcing and electronic components sale and service for clients over 10 years, specialize in ...

Brand Name:IOR

Model Number:IRFP064NPBF

Place of Origin:CHINA

IRFP064NPBF IRFP064N N-Channel MOSFET 55V 110A (Tc) 200W (Tc) Through Hole TO-247AC FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 55V Current - Continuous Drain (Id) @ 25°C 110A (Tc) Drive Voltage (Max Rds On, Min Rds...

Brand Name:Vishay Siliconix

Model Number:SUM110P08-11L-E3

Place of Origin:original

... • Halogen-free available Applications: • DC-DC converters • Automotive • General purpose switching • Motor control • High-side switching • Power management • Battery protection Why

Model Number:NP110N055PUG

Place of Origin:US

Brand Name:Original

MOSFET N-CH 55V 110A TO-263 NP110N055PUG Product Description Packaging Tape & Reel (TR) Part Status Obsolete FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 55V Current - Continuous Drain (Id) @ 25°C 110A (Tc) Drive ...

Brand Name:Original Factory

Model Number:IDWD40G120C5XKSA1

Place of Origin:CN

...110A Through Hole Product Description Of IDWD40G120C5XKSA1 IDWD40G120C5XKSA1 Combined with a Si HighSpeed 3 IGBT, they deliver 40% lower Si IGBT turn-on losses and reduced EMI. Specification Of IDWD40G120C5XKSA1 Part Number: IDWD40G120C5XKSA1 Product: Schottky Silicon Carbide Diodes Mounting Style: Through Hole Technology: SiC Pd - Power...

Brand Name:Anterwell

Model Number:IRFP9240PBF

Place of Origin:original factory

... = - 10 V 0.50 Qg (Max.) (nC) 44 Qgs (nC) 7.1 Qgd (nC) 27 Configuration Single DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with

Brand Name:JUYI

Model Number:JY11M

Place of Origin:China

JY11M N Channel Enhancement Mode Power MOSFET By incorporating advanced trench processing techniques, the JY11M accomplishes a remarkable cell density, concurrently minimizing on-resistance and boasting a high repetitive avalanche rating. The convergence...

Brand Name:original

Model Number:CLA50E1200HB

Place of Origin:Original Factory

... HIGH POWER MOSFET TRANSISTORS / THYRISTOR FOR LINE FREQUENCY 1200V 50A Goods Condition: Brand New Part Status: Active Lead Free / Rohs: Complaint Function: Circuit Control Mounting Type: Through Hole Package: TO247 High Light: n channel mosfet transistor...

Categories:Discrete Semiconductors

Country/Region:china

POWER MOSFET TRANSISTOR APT94N65B2C3G APT94N65B2C3G Microsemi Corporation (now Microchip) MOSFET N-CH 650V 94A T-MAX Product Technical Specifications Category Integrated Circuits (ICs) 　 APT94N65B2C3G POWER MOSFET TRANSISTOR Mfr MICROSEMI/MICROCHIP Series - Package Tube Product Status Obsolete Mounting Type Through Hole Operating Temperature - Supplier Device Package APT94N65B2C3G POWER MOSFET TRANSISTOR Package / Case MOSFET...

Model Number:IRFP9240PBF

Place of Origin:original factory

... = - 10 V 0.50 Qg (Max.) (nC) 44 Qgs (nC) 7.1 Qgd (nC) 27 Configuration Single DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with

Brand Name:IXYS Corporation

Model Number:IXTH460P2

Place of Origin:Shenzhen, China

IXTH460P2 PolarP2 Power MOSFET N-CH 500V 24A TO-247 Distinctive Characteristics : Part No: IXTH460P2 Description: PolarP2 Power MOSFET N-CH 500V 24A TO-247 Product Category: MOSFET Technology: Si Mounting Style: Through Hole Package / Case: TO-247-3 ...

Brand Name:JEUNKEI

Model Number:JY11M

Place of Origin:China

General Description: The JY11M utilizes the latest trench processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and ...

Brand Name:IR

Model Number:IRFP260MPBF

Place of Origin:USA

IRFP260MPBF N - Channel Power Mosfet 200V 50A Through Hole Metal Oxide TO247-3 FEATURES Type : MOSFETS-Single Packaging :Tube Part state: ACTIVE FET type : N - Channel Technology : MOSFET (Metal Oxide) Drain-source voltage (VDSS) : 200V Current - ...

Brand Name:Infineon Technologies/International Rectifier IOR

Model Number:IRFB7440PBF IRFB4310PBF IRFB4115PBF

... ---IRFB7440PBF 40V 120A IRFB4310PBF 100V 130A IRFB4115PBF 150v 104A​ Description: This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this product are a

Brand Name:Upperbond

Model Number:Maker

Place of Origin:China

Baby Mark King Size Through-Hole Version Mosfet Irfz44ns For Kretek Machines A transistor is a semiconductor device used to amplify or switch electronic signals and electrical power. Transistors are one of the basic building blocks of modern electronics...

Brand Name:INFINEON

Model Number:IRF3205PBF

INFINEON Chip IRF3205PBF MOSFET N-CH 55V 110A TO220AB Manufacturer: Infineon Product Category: MOSFET RoHS: Details Technology: Si Mounting Style: Through Hole Package / Case: TO-220-3 Transistor Polarity: N-Channel Number of Channels: 1 Channel Vds - ...

Brand Name:JUYI

Model Number:JY11M

Place of Origin:China

...Power MOSFET GENERAL DESCRIPTION The JY11M utilizes the latest trench processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications. FEATURES ● 100V/110A...

Brand Name:Infineon Technologies

Model Number:SPW35N60C3

Product Range IGBT CoolMOS Discrete Semiconductors SPW35N60C3 MOSFET N-Ch 650V 34.6A TO247-3 App Characteristics New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated Extreme dv /dt rated Ultra low effective capacitances ...