200w rf power transistors

Model Number:YPM060742100C

Brand Name:SZHUAHI

Place of Origin:Jiangsu，China

...Power 100W RF Power Amplifier Module Wireless Wifi Booster for 600-700MHz Product Overview YPM060742100C is an RF power amplifier module dedicated to 600-700MHz signal. This module features high average output power, excellent in-band flatness, and VSWR protection. Technical Specifications Signal bandwidth 600-700MHz Output power 50dBm (100W) Operating Voltage 28V Power...

Brand Name:Analog Devices Inc.

Model Number:AD9364BBCZ

Place of Origin:Multi-origin

AD9364BBCZ RF Power Transistor High Performing Reliable Power Solutions Product Name: AD9364BBCZ RF Power Transistors Description: The AD9364BBCZ RF power transistor is a high-power class AB transistor designed for use in commercial, industrial and ...

Place of Origin:MALAYSIA

Brand Name:MOTOROLA

Model Number:MRW53601

MRW53601 is a NPN SILICON RF POWER TRANSISTOR. Part NO: MRW53601 Brand: MOTOROLA Date Code: 03+ Quality Warranty: 3 Months Mounting Type: Screws Overview Mega Source Electronic Co., LTD specializes in High frequency microwave devices: These products are ...

Brand Name:SWT

Model Number:SW-PAR-20004000-53C

Place of Origin:China

... 19-inch racks with a height of 5U. It operates within a frequency range of 2000 to 4000 MHz and provides up to 200 Watts of output power, making it ideal for applications such as microwave communication, satellite transmission, and

Brand Name:NENGXUN

200W RF Power Amplifier GAN Digital Module for UAV 20-1000MHz Crossing Anti-Interference LORA Wireless & RF Modules Type Product Overview The 200W RF Power Amplifier GAN Digital Module is designed for UAV applications, offering high-power amplification across a wide frequency range of 20-1000MHz. This module features advanced anti-interference capabilities, making it ideal for LORA wireless and RF module applications. Key Features 200W high-power

Brand Name:TeXin

Model Number:TX-1.2RFPA

Place of Origin:Shenzhen ,China

...Power 5-200W RF Power Amplifier UHF 433 MHz For Signal Jammer MOdule Very powerful 433MHz signal jammer module , 5-200w power can be customized . This RF amplifier has rugged exterior aluminum alloy shell , and with temperature and standing wave protection , have good performance , which have RF sweep frequency technology , so this RF module can be widely used for anti drone jammer field . Other frequency bands of RF...

Brand Name:Mitsubishi

Model Number:RD06HVF1

Place of Origin:CN

... applications FEATURES of RD06HVF1 High power gain: Pout>6W, Gp>13dB @Vdd=12.5V,f=175MHz APPLICATION of RD06HVF1 For output stage of high power amplifiers in VHF band mobile radio sets. List Of Other Electronic Components In Stock PART NUMBER MFG/BRAND 　

Brand Name:VBE

Model Number:VBE36015E2

Place of Origin:CHINA

Brand Name:Semelab / TT Electronics

Model Number:D2085UK

Place of Origin:UK

...RF POWER TRANSISTOR MOSFET Manufacturer: TT Electronics Product Category: TT Electronics Brand: Semelab / TT Electronics The D2085UK is a push-pull RF power transistor MOSFET that operates at a voltage of 28V and can handle a power output of 120W. It is designed for use in the frequency range of 1MHz to 1000MHz. Silicon MOSFET: MRF140: RF MOSFET Line, 30W, up to 400MHz, 28V [1] MRF134: Broadband RF Power

Brand Name:Original brand

Model Number:STWA65N60DM6

Place of Origin:Original

Mosfet Power Transistor STWA65N60DM6 Mosfet N-channel 600 V, 0.084 Ohm typ., 30 A MDmesh DM6 Power TO-247 Feature • Extremely low RDS(on)*area and Qg and optimized capacitance profi le for light load conditions • Extremely ...

Brand Name:Texas Instruments

Model Number:PD85035S-E

Place of Origin:Malaysia

PD85035S-E PD85035STR-E PD85035-E RF power transistor MOSFETS The PD85035-E is a common source N-channel,enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates...

Brand Name:NXP

Model Number:BFS505

Place of Origin:CHINA

...Transistors RF Transistor NPN 15V 18mA 9GHz 150mW Surface Mount NPN 9 GHz wideband transistor FEATURES • Low current consumption • High power gain • Low noise figure • High transition frequency • Gold metallization ensures excellent reliability • SOT323 envelope. DESCRIPTION NPN transistor in a plastic SOT323 envelope. It is intended for low power amplifiers, oscillators and mixers particularly in RF...

Brand Name:in

Model Number:STAV58010P2

Place of Origin:CN

Gallium Nitride 50V, 16W, DC-6GHz RF Power Transistor Description The STAV58016P2 is a 16 watt, unmatched GaN HEMT, ideal for general applications up to 6GHz. It features high gain, wide band and low cost, in 4*4.5mm DFN plastic package. It can support CW...

Place of Origin:CN

Brand Name:Original Factory

Model Number:QPD1035

QPD1035 Wireless Communication Module 40W 50V 6 GHz GaN RF Power Transistor [MJD Advantage] + 15 years experience for electronic components + Secure Ordering + Excellent Feedback + Delivery Date Guaranteed + 100% Low Price Guaranteed + Export to 108 ...

Model Number:BFS505

Place of Origin:CHINA

...Transistors RF Transistor NPN 15V 18mA 9GHz 150mW Surface Mount NPN 9 GHz wideband transistor FEATURES • Low current consumption • High power gain • Low noise figure • High transition frequency • Gold metallization ensures excellent reliability • SOT323 envelope. DESCRIPTION NPN transistor in a plastic SOT323 envelope. It is intended for low power amplifiers, oscillators and mixers particularly in RF...

Brand Name:Hua Xuan Yang

Model Number:AOD442

Place of Origin:ShenZhen China

AOD442/AOI442 60V N-Channel MOSFET General Description The AOD442/AOI442 used advanced trench technology to provide excellent R DS(ON) and low gate charge. Those devices are suitable for use as a load switch or in PWM applications. Parameters Part Number ...

Model Number:SD1480

Place of Origin:Malaysia

Brand Name:KAIGENG

SD1480 N/A Electronic Components IC MCU Microcontroller Integrated Circuits SD1480 #detail_decorate_root .magic-0{border-bottom-style:solid;border-bottom-color:#53647a;font-family:Roboto;font-size:24px;color:#53647a;font-style:normal;border-bottom-width:...

Model Number:H5062NL

Product Overview The H5062NL is a high-quality electronic component designed for various applications. Its robust construction and reliable performance make it suitable for industrial and commercial use. The product is engineered to meet specific technical...

Brand Name:Bing Wire & Cable

Model Number:RG119

Place of Origin:Shanghai, China

... conductors, a rugged glass fiber braided jacket, and the ability to handle up to 6000 watts and 6000 volts, this cable is the definitive high-power transmission line for VHF, HF, and industrial RF applications.This is

Brand Name:Infineon

Model Number:IRF5210PBF

Place of Origin:Original Factory

...200W TO-220 DIP Mosfet Power Transistor Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power...