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All 4h sic substrate n type wholesalers & 4h sic substrate n type manufacturers come from members. We doesn't provide 4h sic substrate n type products or service, please contact them directly and verify their companies info carefully.
| Total 5 products from 4h sic substrate n type Manufactures & Suppliers |
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Brand Name:PAM-XIAMEN Place of Origin:China ...6H SiC and 4H SiC in different quality grades for researcher and industry manufacturers. We has developed SiC crystal growth technology and SiC crystal wafer processing technology,established a production line to manufacturer SiC substrate,Which is applied... |
XIAMEN POWERWAY ADVANCED MATERIAL CO., LTD.
Fujian |
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Brand Name:ZMSH Model Number:3C-N SiC Place of Origin:CHINA Overview of 3C-SiC Substrates 2inch 4inch 6inch 8inch 5×5 mm 10×10 mm 4H-SiC Substrates 3C-N Type MOS Grade 3C-N type silicon carbide (3C-SiC) substrate is a wide-bandgap semiconductor material based on the cubic crystal structure (3C), fabricated via ... |
SHANGHAI FAMOUS TRADE CO.,LTD
Shanghai |
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Brand Name:ZMKJ Model Number:6inch 150mm SiC Substrate Place of Origin:CHINA ...SiC) Substrates 4H and 6H Epi-Ready SiC Substrate/Wafers (150mm, 200mm) Silicon Carbide(SiC) wafer N Type 6inch SIC Wafer 4H-N Type production grade sic epitaxial wafers GaN layer on sic About Silicon Carbide (SiC)Crystal Shanghai Famous Trade Co., Ltd 150 mm SiC wafers offer device manufacturers a consistent, high-quality substrate for developing high-performance power devices. Our SiC substrates... |
SHANGHAI FAMOUS TRADE CO.,LTD
Shanghai |
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Brand Name:HMT Place of Origin:CHINA ...4H-SI SiC wafer manufacturer SiC substrate supplier Homray Material Technology offers semiconductor silicon carbide wafers,4H-SiC in different quality grades for researcher and industry manufacturers. We has developed SiC crystal growth technology and SiC crystal wafer processing technology,established a production line to manufacturer SiC substrate... |
Homray Material Technology
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Brand Name:Original Factory Model Number:A2U12M12W2-F2 Place of Origin:CN ... that integrates the advanced silicon carbide Power MOSFET technology. This A2U12M12W2-F2 module leverages the innovative properties of the wide-bandgap SiC material and a high-thermal-performance substrate. The result is exceptionally low on |
ShenZhen Mingjiada Electronics Co.,Ltd.
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