ad8361armz reel7 rf power amplifier transistor

Brand Name:Analog Devices Inc.

Model Number:AD8361ARMZ-REEL7

Place of Origin:Multi-origin

...: Reel Number of Transistors: 7 Configuration: Single-Ended Power Output: +28dBm Gain: 16dB Operating Frequency: 0.05-6GHz Input/Output Impedance: 50Ω Operating Voltage: 5V ...

Brand Name:VBE

Model Number:VBE10R5

Place of Origin:CHINA

Excellent Theramal Stability Rf Power Amplifier Transistor LDMOS FET 28V HF to 2.7GHz

Brand Name:INNOTION

Model Number:YP801241T

Place of Origin:Jiangsu, China

...RF Amplifier Transistor Innotion’s YP801241T is a 12-watt, pre-matched gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities with frequency up to 8500MHz. The transistor is supplied in a plastic DFN-6L 4mm*4.5mm package. Product Specifications Signal Bandwidth DC-8.5GHz Output Power...

Brand Name:TeXin

Model Number:TX-50W

Place of Origin:Shenzhen China

.... With support for multiple frequency bands over 1000MHz bandwidth. Equipped with high power transistors circuits, this amplifier is capable of delivering a maximum output power of 50W, ensuring strong and reliable signal amplification for your projects.

Place of Origin:Freescale Semiconductor

Brand Name:Motorola

Model Number:MHW903

Quick Detail: MHW903 - Motorola, Inc - 3.5 W 890 to 915 MHz RF POWER AMPLIFIERS Description: . . . designed specifically for the Pan European digital 2.0 watt, GSM hand–held radio. The MHW903, MHW953 and MHW954 are capable of wide power range control, ...

Brand Name:Anterwell

Model Number:2SC1972

Place of Origin:original factory

NPN SILICON rf power mosfet transistors for RF power amplifiers on VHF band Mobile radio , 2SC1972 DESCRIPTION: The ASI 2SC1972 is Designed for RF power amplifiers on VHF band mobile radio applications. FEATURES INCLUDE: • Replaces Original 2SC1972 in ...

Brand Name:MYT

Model Number:1.2Ghz 30W anti drone module

Place of Origin:China

... and customizable frequency/power options. Key Features Customizable frequency range: 300MHz - 6GHz Power output customization: 5W - 200W Advanced GaN transistor technology for enhanced efficiency Compact design for easy integration into anti-drone systems

Brand Name:Mitsubishi Electric Semiconductor

Model Number:2SC1971

Place of Origin:CHINA

2SC1971 C1971 TO220 NPN epitaxial planar type transistor designed for RF power amplifiers Description: silicon NPN epitaxial planar type transistor designed for RF power amplifiers on VHF band mobile radio applications. List Of Other Electronic Components...

Brand Name:OEM

Place of Origin:China

... RF Power Amplifier Detect Module for Anti Drone System Autel Mavic 3 Counter Fpv C-Uas Djis Countermeasure Product Parameters GaN transistors are more efficient. The efficiency minus the driver (heating power consumption) is about 55-65%. In fact, the...

Place of Origin:Netherlands

Brand Name:ORIGINAL

Model Number:MRF6VP11KH

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Model Number:2SC2782

Place of Origin:Malaysia

Brand Name:KAIGENG

2SC2782 N/A Electronic Components IC MCU Microcontroller Integrated Circuits 2SC2782 #detail_decorate_root .magic-0{border-bottom-style:solid;border-bottom-color:#53647a;font-family:Roboto;font-size:24px;color:#53647a;font-style:normal;border-bottom-width:...

Model Number:BFP196E6327HTSA1

...BFP196 is a low-noise silicon bipolar RF transistor designed for low-noise, low-distortion broadband amplifiers in antenna and telecommunications systems up to 1.5 GHz. It is also suitable as a power amplifier for DECT and PCN systems. Key features include...

Brand Name:NXP

Model Number:BFS505

Place of Origin:CHINA

...Transistors RF Transistor NPN 15V 18mA 9GHz 150mW Surface Mount NPN 9 GHz wideband transistor FEATURES • Low current consumption • High power gain • Low noise figure • High transition frequency • Gold metallization ensures excellent reliability • SOT323 envelope. DESCRIPTION NPN transistor in a plastic SOT323 envelope. It is intended for low power amplifiers, oscillators and mixers particularly in RF...

Model Number:BFS505

Place of Origin:CHINA

...Transistors RF Transistor NPN 15V 18mA 9GHz 150mW Surface Mount NPN 9 GHz wideband transistor FEATURES • Low current consumption • High power gain • Low noise figure • High transition frequency • Gold metallization ensures excellent reliability • SOT323 envelope. DESCRIPTION NPN transistor in a plastic SOT323 envelope. It is intended for low power amplifiers, oscillators and mixers particularly in RF...

Place of Origin:US

Brand Name:Original

Model Number:2sc2078

Product Detail 1. Stock,Order goods or Manufacturing welcome. 2. Sample order. 3. We will reply you for your inquiry in 24 hours. 4. After sending, we will track the products for you once every two days, until you get the products. 5. When you got the ...

Brand Name:MITSUBISHI

Model Number:RA20H8087M

Place of Origin:JAPAN

Brand Name:Diodes Incorporated

Model Number:BS816A-1

Place of Origin:USA

...TRANSISTOR RF Transistors Manufacturer: DIODES Product Category: P-CHANNEL ENHANCEMENT RoHS: Details Mounting Style: - Package / Case: 16NSOP Packaging: Standard Unit Weight: - oz This transistor is suitable for RF power amplifiers in various applications such as wireless communication, broadcasting, and industrial RF equipment. ● P-channel enhancement mode ● DMOS transistor technology ● High power

Categories:Amplifier

Country/Region:china

Good quality Electronic Component provider from China——GS Electronics, Product Details: AD8605ARTZ-REEL7 Introduction: Welcome to the detailed product page for the AD8605ARTZ-REEL7. This low-power, precision rail-to-rail input and output operational ...

Brand Name:original

Model Number:MRF9045LR1

Place of Origin:original

...RF Bipolar Transistors Si original in stock The ASI MRF9045LR1 is a high voltage, gold-metalized, laterally diffused metal oxide semiconductor. Ideal for today's RF power amplifier Applications. Product Category: RF MOSFET Transistors RoHS: Details Transistor...

Brand Name:Vishay / Siliconix

Model Number:IRFP260

Power Up with IRFP260 MOSFET Transistors Unlock the Pros and Cons of IRFP260 for Your Electronics Projects If you're looking for high-powered MOSFET transistors to use in your electronics projects, you might want to consider the IRFP260 model. This powerful semiconductor device is designed to handle high voltages and currents, making it ideal for a wide range of applications, from power supplies and motor control to audio amplifiers and RF