blf6g38 50 135 mosfet transistor

Model Number:BLF6G38-50,135

..., please refer to the data sheet, such as PDF files Docx documents, etc. We have BLF6G38-50,135 high-definition pictures and data sheets for reference. We will continue to produce various video files and 3D models for users to understand our ...

Categories:RF JFET Transistors

Country/Region:china

... JFET Transistors.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online ...

Model Number:BLF6G38-50,135

RF Mosfet 28 V 450 mA 3.4GHz ~ 3.6GHz 14dB 9W SOT502A

Categories:FETs MOSFETs

Country/Region:china

RF Mosfet 28 V 450 mA 3.4GHz ~ 3.6GHz 14dB 9W SOT502A

Model Number:BLF6G38-50,135

RF Mosfet 28 V 450 mA 3.4GHz ~ 3.6GHz 14dB 9W SOT502A

Brand Name:Anterwell

Model Number:FDS9435A

Place of Origin:original factory

... drive voltage ratings (4.5V – 25V). Applications · Power management · Load switch · Battery protection Features · –5.3 A, –30 V RDS(ON) = 50 mW @ VGS = –10 V

Brand Name:JC

Model Number:OSFZ44N

Place of Origin:Jiangxi, China

...Mosfet Transistor / High Frequency Transistor Amplifier Audio Mosfet Transistor Application DC motor control Automotive applications Uninterruptible power supply Absolute Maximum Ratings (Tc=25°C) Symbol Parameters Ratings Unit VDSS Drain-Source Voltage 60 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous(Note 2) 50...

Model Number:IRF1404PBF

Place of Origin:China

Brand Name:original

Transistor MOSFET N channel 162A 40V 4MOHM MOS tube IRF1404PBF Products Description: 1. INFINEON IRF1404PBF transistor, MOSFET, N channel, 162 A, 40 V, 4 MoHM, 10 V, 4 V 2. The to-220 package is universally preferred for allcommercial-industrial applications at power There is a cost of approximately 50...

Model Number:FDS9435A

Place of Origin:original factory

... drive voltage ratings (4.5V – 25V). Applications · Power management · Load switch · Battery protection Features · –5.3 A, –30 V RDS(ON) = 50 mW @ VGS = –10 V

Brand Name:Original Factory

Model Number:SCT011H75G3AG

Place of Origin:CN

.... Specification Of SCT011H75G3AG Part Number: SCT011H75G3AG Package: H²PAK-7 Gate-Source Voltage: -10V To 22V Thermal Resistance, Junction-To-Ambient: 50 °C/W

Brand Name:Infi neon

Model Number:IRF3205PBF

Place of Origin:Shenzhen, China

IRF3205PBF Trans MOSFET N-CH Si 55V 110A 3-Pin(3+Tab) TO-220AB Tube Basic Parameters : Advanced Process Technology. Ultra Low On-Resistance. Dynamic dv/dt Rating. 175°C Operating Temperature. Fast Switching. Fully Avalanche Rated. Lead-Free. Absolute ...

Model Number:AFT21S232S

Place of Origin:Malaysia

Brand Name:KAIGENG

AFT21S232S N/A Electronic Components IC MCU Microcontroller Integrated Circuits AFT21S232S #detail_decorate_root .magic-0{border-bottom-style:solid;border-bottom-color:#53647a;font-family:Roboto;font-size:24px;color:#53647a;font-style:normal;border-bottom-...

Brand Name:Mitsubishi

Model Number:RA30H1317M

Place of Origin:JP

...135- to 175-MHz range. The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. Without the gate voltage (VGG=0V), only a small leakage current flows into the drain and the RF input signal attenuates up to 60 dB. The

Place of Origin:Original

BLF6G27-45,135 Specifications Part Status Obsolete Transistor Type LDMOS Frequency 2.7GHz Gain 18dB Voltage - Test 28V Current Rating 20A Noise Figure - Current - Test 350mA Power - Output 7W Voltage - Rated 65V Package / Case SOT-608A Supplier Device ...

Place of Origin:China

Brand Name:ONSEMI

Model Number:NVMFS6H818NL

... in selling the new and unused, original factory sealed packing electronic components. specialize in IC,MCU,Memory,Module,diode,transistor,IGBT,PCBA, prototype,BOM Kitting. Sunbeam Electronics has a

Brand Name:Hua Xuan Yang

Model Number:AP50N10P

Place of Origin:ShenZhen China

...Mosfet Power Transistor 50A 100V Mosfet Power Transistor Description: The AP50N10P uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. Mosfet Power Transistor Features VDS = 100V ID =50...

Brand Name:onsemi

Model Number:NVMFS5C673NLWFAFT1G

Place of Origin:original

NVMFS5C673NLWFAFT1G MOSFET Power Electronics Single N-Channel DFN5 DFNW5 60 V 9.2 m 50 A N-Channel PowerTrench P-Channel QFET® MOSFET -60 V, -12 A, 135 roduct Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) ...

Brand Name:Original

Model Number:IRLML6401TRPBF

Place of Origin:Original

... Technology: Si Mounting Style: SMD/SMT Package / Case: SOT-23-3 Transistor Polarity: P-Channel Number of Channels: 1 Channel Vds - Drain-Source Breakdown Voltage: 12 V Id - Continuous Drain Current: 4.3 A Rds On - Drain-Source Resistance: 50 mOhms Vgs -

Brand Name:Huixin

Model Number:BSS138

Place of Origin:China

...MOSFETS BSS138 N-Channel 50-V(D-S) MOSFET V(BR)DSS RDS(on)MAX ID 50 V 3.5Ω@10V 220mA 6Ω@4.5V BSS138 SOT-23 Datasheet.pdf FEATURES 1.High density cell design for extremely low RDS(on) 2.Rugged and Relaible APPLICATIONS 1.Direct Logic-Level Interface: TTL/CMOS 2.Drivers: Relays, Solenoids, Lamps, Hammers,Display, Memories, Transistors...

Brand Name:TOSHIBA

Model Number:IRF740PBF

Place of Origin:Original Factory

...Transistor 400V 10A Power MOSFET 125W 550 MOhms Description Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50...