n type enhancement mosfet

Brand Name:onsemi

Model Number:FDMA908PZ

Place of Origin:Multi-origin

...MOSFET Power Electronics Parameters: • Voltages: 8V - 28V • Package: TO-220 • Maximum Continuous Drain Current: 8A • Maximum Power Dissipation: 16W • RDS(on): 0.19 ohm • Operating Temperature Range: -55°C to +150°C • Gate Threshold Voltage: 1.9V • Input Capacitance: 680pF • Output Capacitance: 200pF • Fall Time: 61ns • Rise Time: 52ns • Drain-Source Breakdown Voltage: 28V Product Status Active FET Type...

Place of Origin:CN

Brand Name:Original Factory

Model Number:MSCSM170HRM451AG

Automotive IGBT Modules MSCSM170HRM451AG Mosfet Array T-Type SiC MOSFET Power Module [MJD Advantage] + 15 years experience for electronic components + Secure Ordering + Excellent Feedback + Delivery Date ...

Brand Name:onsemi

Model Number:NTE4153NT1G

Manufacturer: onsemi Product Category: MOSFETs RoHS: Details Technology: Si Mounting Style: SMD/SMT Package / Case: SC-89-3 Transistor Polarity: N-Channel Number of Channels: 1 Channel Vds - Drain-Source Breakdown Voltage: 20 V Id - Continuous Drain ...

Model Number:HY3912W

Place of Origin:original

Brand Name:Original

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Place of Origin:Original

Brand Name:Littelfuse Inc.

Model Number:NGD8205ANT4G

NGD8205ANT4G IGBT Power Module Transistors IGBTs Single NGD8205ANT4G Specifications Part Status Active IGBT Type - Voltage - Collector Emitter Breakdown (Max) 390V Current - Collector (Ic) (Max) 20A Current - Collector Pulsed (Icm) 50A Vce(on) (Max) @ Vge...

Brand Name:LEADSIGN

Model Number:FAKRA Connector Cable

Place of Origin:China

Product Description: FAKRA cables, essential in modern automotive technology, facilitate reliable signal transmission with a host of advantages. They ensure robust and interference-resistant connectivity, making them pivotal in the automotive industry's ...

Brand Name:Mitsubishi

Model Number:RA45H4045MR-101

Place of Origin:JP

... The RA45H4045MR is a 45-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 400- to 450-MHz range. The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. Without the gate voltage (VGG=0V...

Brand Name:Hua Xuan Yang

Model Number:12N60

Place of Origin:ShenZhen China

...Mosfet Transistor , Small Mosfet Power Switch Enhancement Mode N Channel Mosfet Transistor DESCRIPTION The UTC 12N60-C is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used in high speed switching applications of switching power supplies and adaptors. N Channel Mosfet

Brand Name:REASUNOS

Place of Origin:Guangdong, CN

Product Description: The High Power MOSFET is an advanced semiconductor device designed to meet the demanding requirements of modern electronic applications. As a vital component in various high-performance systems, this HV MOSFET stands out due to its ...

Brand Name:TOSHIBA

Model Number:TPC8111

Place of Origin:Taiwan

....) • High forward transfer admittance: |Yfs| = 23 S (typ.) • Low leakage current: IDSS = −10 µA (max) (VDS = −30 V) • Enhancement-mode: Vth = −0.8 to −2.0 V (VDS = −10 V, ID =

Brand Name:Infineon

Model Number:IPB200N25N3

Place of Origin:CHINA

... Threshold Yes Automotive No PPAP No Product Category Power MOSFET Configuration Single Process Technology OptiMOS 3 Channel Mode Enhancement Channel Type N Number of Elements per Chip 1 Maximum Drain Source Voltage (V) 250 Maximum Gate Source Voltage (V)

Brand Name:JUYI

Model Number:JY4N8M

Place of Origin:China

JY4N8M N Channel Enhancement Mode Power surface mount MOSFET for BLDC motor driver GENERAL DESCRIPTION: The JY4N8M utilizes the latest trench processing techniques to achieve the high cell density and ...

Brand Name:To shi ba

Model Number:TK8A60DA(STA4,Q,M)

Place of Origin:Shenzhen, China

TK8A60DA Trans MOSFET N-CH 600V 7.5A 3-Pin(3+Tab) TO-220SIS - Rail/Tube Technical Attributes : Description Value Channel Mode Enhancement Channel Type N Maximum Continuous Drain Current 7.5 A Maximum Drain Source Voltage 600 V Maximum Gate Source Voltage...

Brand Name:Hua Xuan Yang

Model Number:G080NH03LA1C1

Place of Origin:ShenZhen China

...similar to the general MOSFET. The power MOSFETS are very special to handle the high level of powers. It shows the high switching speed and by comparing with the normal MOSFET, the power MOSFET will work better. The power MOSFETs is widely used in the n

Brand Name:Diodes

Model Number:DMN26D0UFB4-7

Place of Origin:UAS

DMN26D0UFB4-7 Diodes MOSFET ENHANCE MODE MOSFET 20V N-Chan X2-DFN1006 DMN26D0UFB4-7B Manufacturer: Diodes Incorporated Product Category: MOSFET Technology: Si Installation style: SMD/SMT Package/Box: X2-DFN1006-3 Transistor polarity: N-Channel Number of ...

Brand Name:INFINEON

Model Number:IRF7342TRPBF

... Introduction of Infineon IRF7342TRPBF N-Channel MOSFET 1. Product Overview Infineon IRF7103342TRPBF is a high-performance N-channel enhancement-mode metal-oxide-semiconductor field-effect transistor (MOSFET) developed by Infineon Technologies AG—a...

Brand Name:DIODES

Model Number:ZXMP10A17E6TA

Place of Origin:Original

...ENHANCEMENT MODE MOSFET linear power mosfet trench power mosfet FEATURES • Low on-resistance • Fast switching speed • Low threshold • Low gate drive • SOT23-6 package APPLICATIONS • DC–DC Converters • Power Management functions • Disconnect switches • Motor control DESCRIPTION This new generation of Trench MOSFETs...

Brand Name:APEC

Model Number:AP4953GM

Place of Origin:Original Factory

INTEGRATED CIRCUIT CHIP AP4953GM --P-CHANNEL ENHANCEMENT MODE POWER MOSFET Quick Detail: P-CHANNEL ENHANCEMENT MODE POWER MOSFET Specifications: part no. 　AP4953GM Manufacturer 　APEC supply ability 　3000 datecode 　2007+ package SOP　 remark new...

Place of Origin:MALAYSIA

Brand Name:Freescale

Model Number:MRF6S19140HSR3

MRF6S19140HSR3 is a N-Channel Enhancement-Mode Lateral MOSFETs . Part NO: MRF6S19140HSR3 Brand: Freescale Date Code: 06+ Quality Warranty: 3 Months Mounting Type: Screws Overview Mega Source Electronic Co., LTD specializes in High frequency microwave ...

Brand Name:FORTUNE

Model Number:FS8205A

Place of Origin:TAIWAN

FS8205A Dual N-Channel Enhancement-Mode MOSFET (20V, 6A) 1.Description This N-Channel 2.5V specified MOSFET is a rugged gate version of advanced trench process. It has been optimized for power management applications with a wide range of gate drive voltage...