p level 4h sic substrate

Brand Name:ZMSH

Model Number:3C-N SiC

Place of Origin:CHINA

Overview of 3C-SiC Substrates 2inch 4inch 6inch 8inch 5×5 mm 10×10 mm 4H-SiC Substrates 3C-N Type MOS Grade 3C-N type silicon carbide (3C-SiC) substrate is a wide-bandgap semiconductor material based on the cubic crystal structure (3C), fabricated via ...

Brand Name:PAM-XIAMEN

Place of Origin:China

...6H SiC and 4H SiC in different quality grades for researcher and industry manufacturers. We has developed SiC crystal growth technology and SiC crystal wafer processing technology,established a production line to manufacturer SiC substrate,Which is applied...

Brand Name:ZMSH

Model Number:SiC wafer

Place of Origin:China

SiC Substrate 4H/6H-P 3C-N 45.5mm~150.0mm Z Grade P Grade D Grade 4H/6H-P 3C-N SiC substrate's Abstract This study explores the structural and electronic properties of 4H/6H polytype silicon carbide (SiC) substrates integrated with epitaxially grown 3C-N SiC films. The polytypic transition between 4H/6H-SiC and 3C-N-SiC offers unique opportunities to enhance the performance of SiC...

Brand Name:HMT

Place of Origin:CHINA

...4H-SI SiC wafer manufacturer SiC substrate supplier Homray Material Technology offers semiconductor silicon carbide wafers,4H-SiC in different quality grades for researcher and industry manufacturers. We has developed SiC crystal growth technology and SiC crystal wafer processing technology,established a production line to manufacturer SiC substrate...

Brand Name:Original Factory

Model Number:A2U12M12W2-F2

Place of Origin:CN

... that integrates the advanced silicon carbide Power MOSFET technology. This A2U12M12W2-F2 module leverages the innovative properties of the wide-bandgap SiC material and a high-thermal-performance substrate. The result is exceptionally low on