pbss5350z low vce sat pnp transisto

Brand Name:NXP

Model Number:PBSS5350T,215

Place of Origin:China

...PNP Transistor 40V Voltage 3A Current Low Vce(sat) High Efficiency SOT-223 Package Halogen-Free Pb-Free Robust Performance for Power Switching andamp; Amplification andnbsp; Features andbull; Low collector-emitter saturation voltage VCEsat and corresponding low...

Place of Origin:China

Brand Name:ONSEMI

Model Number:NUS5530MN

High Power MOSFET NUS5530MN Integrated with PNP Low VCE(sat) Switching Transistor [Who we are?] Sunbeam Electronics (Hong Kong) Co. Ltd is focus on semi-conductors sourcing and electronic components sale and service for clients over 10 years, specialize...

Brand Name:ROHM Semiconductor

Model Number:2SB1424

Place of Origin:JAPAN

...Transistors - BJT ROHS 2SB1424 PNP Low VCE(sat) Transistor Product Paramenters Manufacturer: ROHM Semiconductor Product Category: Bipolar Transistors - BJT RoHS: Details Mounting Style: SMD/SMT Transistor Polarity: PNP Configuration: Single Collector- ...

Place of Origin:PHILIPPINE

Brand Name:TOSHIBA

Model Number:IXSN35N120U1

Quick Detail: High Voltage IGBT with Diode Description: VCES = 1200 V IC25 = 70 A VCE(sat) = 4 V Applications: ● International standard package mini BLOC (ISOTOP) compatible ● Aluminium-nitride isolation - high power dissipation ● Isolation voltage 3000...

Brand Name:Diodes Incorporated

Model Number:ZX5T1951GTA

Place of Origin:USA

... Bipolar (BJT) Transistor PNP 60 V 6 A 120MHz 1.6 W SOT-223-3 Features • BVCEO > -60V • IC = -6A Continuous Collector Current • Low Saturation Voltage VCE(sat) < -95mV max @ -1A • RCE(sat) = 40mΩ for a low Equivalent On-Resistance • hFE ...

Brand Name:TOSHIBA

Model Number:2SA1298

Place of Origin:brand new

... (sat) = −0.4 V (max) (IC = −500 mA, IB = −20 mA) • Suitable for driver stage of small motor • Complementary to 2SC3265 • Small ...

Brand Name:TOSHIBA

Model Number:GT20J101

Place of Origin:CHINA

GT20J101 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications • The 3rd Generation • Enhancement-Mode • High Speed: tf = 0.30 µs (max) • Low Saturation Voltage: VCE (sat) = 2.7 V (max) Characteristic Symbol ...