rf power transistor fet 30 w

Model Number:MRF148A

Place of Origin:Malaysia

Brand Name:KAIGENG

MRF148A N/A Electronic Components IC MCU Microcontroller Integrated Circuits MRF148A #detail_decorate_root .magic-0{border-bottom-style:solid;border-bottom-color:#53647a;font-family:Roboto;font-size:24px;color:#53647a;font-style:normal;border-bottom-width:...

Place of Origin:Taiwan

Brand Name:Motorola, Inc

Model Number:MRF136

... or push–pull configuration. Applications: • Small–Signal and Large–Signal Characterization • 100% Tested For Load Mismatch At All Phase Angles With 30:1 VSWR • Space Saving Package For Push–Pull Circuit Applications — MRF136Y •

Brand Name:Analog Devices Inc.

Model Number:HMC442LC3BTR

Place of Origin:Multi-origin

... military, aerospace, and commercial. Features: - High gain, medium power GaN on SiC Heterojunction FET - 50 W CW output power - 10.2 dB gain - 28 V operation - High efficiency - High frequency operation - Low distortion - High linearity - Low ...

Brand Name:Mitsubishi

Model Number:RD06HVF1

Place of Origin:CN

... applications FEATURES of RD06HVF1 High power gain: Pout>6W, Gp>13dB @Vdd=12.5V,f=175MHz APPLICATION of RD06HVF1 For output stage of high power amplifiers in VHF band mobile radio sets. List Of Other Electronic Components In Stock PART NUMBER MFG/BRAND 　

Brand Name:VBE

Model Number:VBE36015E2

Place of Origin:CHINA

Place of Origin:Jiangsu, China

Brand Name:SZHUASHI

Model Number:YP40601625T

SZHUASHI 100% New YP40601625T 30W 50V 5700- 5900MHz PA Power Amplifier RF Power Transistor with Standard Features Product Description The YP40601625T is a 30-watt, internally matched GaN HEMT, designed for multiple applications with frequencies 4000 to ...

Brand Name:Original brand

Model Number:STWA65N60DM6

Place of Origin:Original

Mosfet Power Transistor STWA65N60DM6 Mosfet N-channel 600 V, 0.084 Ohm typ., 30 A MDmesh DM6 Power TO-247 Feature • Extremely low RDS(on)*area and Qg and optimized capacitance profi le for light load conditions • Extremely high dv/dt • Optimized body diode...

Place of Origin:Original

BLS6G2735L-30,112 Specifications Part Status Active Transistor Type LDMOS Frequency 3.1GHz ~ 3.5GHz Gain 13dB Voltage - Test 32V Current Rating - Noise Figure - Current - Test 50mA Power - Output 30W Voltage - Rated 60V Package / Case SOT-1135A Supplier ...

Brand Name:NXP Semiconductors

Model Number:AFT05MS003NT1

...Transistors N Channel 500mV 30V RF Power AFT05MS003NT1 ,NXP , RF MOSFET Transistors,N-Channel,- 500 mV, 30 V,RF Power MOSFET,1.8 MHz to 941 MHz, 20.8 dB,SOT-89-3 Product Attribute Attribute Value Manufacturer: NXP Product Category: RF MOSFET Transistors Transistor Polarity: N-Channel Technology: Si Id - Continuous Drain Current: 2.6 A Vds - Drain-Source Breakdown Voltage: - 500 mV, 30...

Brand Name:Semelab

Model Number:D1028UK

Place of Origin:UK

...: 30 A Vds - Drain-Source Breakdown Voltage: 70 V Operating Frequency: 175 MHz Gain: 13 dB Output Power: 300 W Maximum Operating Temperature: + 150 C Mounting Style: SMD/SMT Package / Case: DR Brand: Semelab / TT ...

Model Number:MRF9030

Place of Origin:original factory

The RF Sub–Micron MOSFET Line RF POWER FIELD EFFECT TRANSISTORS N–Channel Enhancement–Mode Lateral MOSFETs 945 MHz, 30 W, 26 V LATERAL N–CHANNEL BROADBAND RF POWER MOSFETs Designed for broadband commercial and industrial applications with ...

Categories:Transistors - FETs, MOSFETs - RF

Country/Region:china

..., please refer to the data sheet, such as PDF files Docx documents, etc. We have BLF3G22-30,135 high-definition pictures and data sheets for reference. We will continue to produce various video files and 3D models for users to ...

Brand Name:MITSUBISHI

Model Number:RD06HVF1

Place of Origin:Original

... High power gain: Pout>6W, Gp>13dB @Vdd=12.5V,f=175MHz APPLICATION For output stage of high power amplifiers in VHF band mobile radio sets. RoHS COMPLIANT RD06HVF1-101 is a RoHS compliant products. RoHS compliance is ...

Brand Name:Original Factory

Model Number:NVBG080N120SC1

Place of Origin:CN

...FETs Transistors Product Description Of NVBG080N120SC1 NVBG080N120SC1 include high efficiency, fast operation frequency, increased power density, reduced EMI, and reduced system size. Specification Of NVBG080N120SC1 Part Number NVBG080N120SC1 Id - Continuous Drain Current: 30...

Brand Name:TX TELSIG

Model Number:YP3035W

Place of Origin:China

...band. The device is manufactured on an advanced InGaP Heterojunction Bipolar Transistor (HBT) process, The amplifier provides a typical gain of 30 dB and P1dB power of 34.5dBm, typical bias condition is 5V at 450 mA. The YP3035W is assembled in a 16-pin, 4