si face cmp sic epitaxial wafer

Brand Name:PAM-XIAMEN

Place of Origin:China

...industry. SiC wafer is a next generation semiconductor materialwith unique electrical properties and excellent thermal properties for high temperature and high power device application. SiC wafer can be supplied in diameter 2~6 inch, both 4H and 6H SiC , N

Brand Name:ZMSH

Model Number:4inch SiC Epitaxial Wafer

Place of Origin:CHINA

...SiC epitaxial wafer 4H overview 4inch SiC Epitaxial Wafer 4H-N Diameter 100mm Thickness 350μm Prime Grade As a core material for silicon carbide (SiC) power device manufacturing, the 4-inch SiC epitaxial wafer is based on a 4H-N-type SiC wafer, grown using chemical vapor deposition (CVD) to produce a high-uniformity, low-defect-density single-crystal thin film. Its technical advantages include: ​​ · Crystal Structure​​: (0001) silicon-face

Brand Name:ZMSH

Model Number:GaN-on-Si Wafer

Place of Origin:China

...) are 3D integrated at the wafer scale. The two wafers are bonded face-to-face using a low-temperature oxide-oxide bonding technique. The Si substrate of the silicon-on-insulator wafer is completely removed by grinding and selective wet etch to stop at the

Brand Name:HMT

Place of Origin:CHINA

...SI SiC wafer manufacturer SiC substrate supplier Homray Material Technology offers semiconductor silicon carbide wafers,4H-SiC in different quality grades for researcher and industry manufacturers. We has developed SiC crystal growth technology and SiC crystal wafer processing technology,established a production line to manufacturer SiC substrate,Which is applied in GaN epitaxy...

Brand Name:CAEC

Place of Origin:Henan, China

...epitaxial wafers. They can be used steadily on the Japanese, Korean and Taiwanese grinders with high performance. Workpiece: sapphire epitaxial wafer, SiC substrate epitaxial wafer, Si substrate epitaxial wafer. Material of workpiece: Synthetic sapphire, SiC...