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BAW Devices Dia 50.8mm 1 Inch AlN Aluminum Nitride Wafer

BAW Devices Dia 50.8mm 1 Inch AlN Aluminum Nitride Wafer

BAW Devices Dia 50.8mm 1 Inch AlN Aluminum Nitride Wafer
BAW Devices Dia 50.8mm 1 Inch AlN Aluminum Nitride Wafer
Categories Semiconductor Substrate
Brand Name: ZMKJ
Model Number: UTI-AlN-1inch single crystal
Place of Origin: China
MOQ: 1pcs
Price: by case
Payment Terms: T/T, Western Union, paypal
Supply Ability: 10pcs/month
Delivery Time: in 30days
Packaging Details: single wafer container in cleaning room
material: AlN crystal
thickness: 400um
Orientation: 0001
application: high power/high frequency electronic devices
application 2: 5G saw/BAW Devices
Ra: 0.5nm
surface polished: Al face cmp, N-face mp
crystal type: 2H
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SHANGHAI FAMOUS TRADE CO.,LTD
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BAW Devices Dia 50.8mm 1 Inch AlN Aluminum Nitride Wafer

dia50.8mm 2inch 1inch AlN substrate/AlN single crystal wafers

10x10mm or diameter 10mm dia25.4mm dia30mm, dia45mm, dia50.8mm AlN substrate AlN single crystal wafers


Applications of AlN template
we have developed a serials of proprietary processes and technologies to fabricate
high-quality AlN templates. At present, Our OEM is the only company worldwide who can produce 2-6 inch AlN
templates in large-scale industrial production capability with capacity of 300,000 pieces in 2020 to meet explosive
market demand from UVC-LED, 5G wireless communication, UV detectors and sensors etc
We currently provide customers with standardized 10x10mm/Φ10mm/Φ15mm/Φ20mm/Φ25.4mm/Φ30mm/Φ50.8mm high quality nitrogen
Aluminum single crystal substrate products, and can also provide customers with 10-20mm non-polar
M-plane aluminum nitride single crystal substrate, or customize non-standard 5mm-50.8mm to customers
Polished aluminum nitride single crystal substrate. This product is widely used as a high-end substrate material
Used in UVC-LED chips, UV detectors, UV lasers, and various high power
/High temperature/high frequency electronic device field.
Characteristic Specification
  • Model UTI-AlN-10x10B-single crystal
  • Diameter 10x10±0.5mm ； or dia10mm, dia25.4mm, or dia30mm, or dia45mm;
  • Substrate thickness (µm) 400 ± 50
  • Orientation C-axis [0001] +/- 0.5°

Quality Grade S-grade(super) P-grade(production) R-grade(Research)

  • Cracks None None <3mm
  • FWHM-2θXRD@(0002) <150 <300 <500
  • FWHM-HRXRD@(10-12) <100 <200 <400
  • Surface Roughness [5×5µm] (nm) Al-face CMP <0.5nm; N-face(back surface) MP <1.2um;
  • Usable area 90%
  • Absorbance <50 ； <70 ； <100；
  • 1st OF length orientation {10-10} ±5°；
  • TTV (µm) ≤30
  • Bow (µm) ≤30
  • Warp (µm) -30~30
  • Note: These characterization results may vary slightly depending on the equipments and/or software employed


impurity element C O Si B Na W P S Ti Fe
PPMW 27 90 5.4 0.92 0.23 <0.1 <0.1 <0.5 0.46 <0.5
Crystal structure

Wurtzite

Lattice constant (Å)a=3.112, c=4.982
Conduction band typeDirect bandgap
Density (g/cm3)3.23
Surface microhardness (Knoop test)800
Melting point (℃)2750 (10-100 bar in N2)
Thermal conductivity (W/m·K)320
Band gap energy (eV)6.28
Electron mobility (V·s/cm2)1100
Electric breakdown field (MV/cm)11.7

Product Tags:

AlN aluminum nitride wafer

  

50.8mm aluminum nitride wafer

  

BAW Devices AlN wafer

  
Buy BAW Devices Dia 50.8mm 1 Inch AlN Aluminum Nitride Wafer at wholesale prices

BAW Devices Dia 50.8mm 1 Inch AlN Aluminum Nitride Wafer

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