| Sign In | Join Free | My benadorassociates.com |
|
| Sign In | Join Free | My benadorassociates.com |
|
| Categories | Semiconductor Substrate |
|---|---|
| Brand Name: | ZMKJ |
| Model Number: | 2inch AlN-sapphire |
| Place of Origin: | China |
| MOQ: | 5pcs |
| Price: | by case |
| Payment Terms: | T/T, Western Union, paypal |
| Supply Ability: | 50pcs/month |
| Delivery Time: | in 30days |
| Packaging Details: | single wafer container in cleaning room |
| substrate: | sapphire wafer |
| layer: | AlN template |
| layer thickness: | 1-5um |
| conductivity type: | N/P |
| Orientation: | 0001 |
| application: | high power/high frequency electronic devices |
| application 2: | 5G saw/BAW Devices |
| silicon thickness: | 525um/625um/725um |
| Company Info. |
| SHANGHAI FAMOUS TRADE CO.,LTD |
| Verified Supplier |
| View Contact Details |
| Product List |
2inch 4iinch 6Inch Sapphire based AlN templates AlN film on sapphire substrate
2inch on sapphire substrate AlN Template layer Wafer For 5G BAW Devices
aracteristic SpecificationOther relaterd 4INCH GaN Template Specification
| GaN/ Al₂O₃ Substrates (4") 4inch | |||
| Item | Un-doped | N-type | High-doped N-type |
| Size (mm) | Φ100.0±0.5 (4") | ||
| Substrate Structure | GaN on Sapphire(0001) | ||
| SurfaceFinished | (Standard: SSP Option: DSP) | ||
| Thickness (μm) | 4.5±0.5; 20±2;Customized | ||
| Conduction Type | Un-doped | N-type | High-doped N-type |
| Resistivity (Ω·cm)(300K) | ≤0.5 | ≤0.05 | ≤0.01 |
| GaN Thickness Uniformity | ≤±10% (4") | ||
| Dislocation Density (cm-2) | ≤5×108 | ||
| Useable Surface Area | ＞90% | ||
| Package | Packaged in a class 100 clean room environment. | ||
| Crystal structure | Wurtzite |
| Lattice constant (Å) | a=3.112, c=4.982 |
| Conduction band type | Direct bandgap |
| Density (g/cm3) | 3.23 |
| Surface microhardness (Knoop test) | 800 |
| Melting point (℃) | 2750 (10-100 bar in N2) |
| Thermal conductivity (W/m·K) | 320 |
| Band gap energy (eV) | 6.28 |
| Electron mobility (V·s/cm2) | 1100 |
| Electric breakdown field (MV/cm) | 11.7 |
|
InAs Substrate 2inch 3inch 4inch 5inch 6inch Un/S/Zn Type N/P Polished DSP/SSP
MgO Wafer 111 100 Polished Magnesium Oxide Monocrystal Semiconductor Customized
2inch 4inch 6inch 8inch 12inch Si Wafer Silicon Wafer Polishing Undoped P Type N Type Semiconductor
InP wafer 2inch 3inch 4inch VGF P type N type Depant Zn S Fe Undoped Prime Grade Testing Grade
GaP Wafer 2inch N Type Undoped S Doped 100 DSP SSP CZ High Purity 5N 99.999%
Single Crystal InP Indium Phosphide Wafers 350 - 650um Thickness
2 Inch 1000nm AlN Film Silicon Based Aluminum Nitride Semiconductor Substrate
6 Inch Sapphire Based AlN Templates Wafer For 5G BAW Devices Sapphire wafer sapphire window
4" Sapphire Based GaN Templates Semiconductor Substrate
6" Silicon Based AlN Templates 500nm AlN Film On Silicon Substrate
