| Sign In | Join Free | My benadorassociates.com | 
 | 
| Categories | Semiconductor Substrate | 
|---|---|
| Brand Name: | ZMSH | 
| Model Number: | LN/LT | 
| Certification: | ROHS | 
| Place of Origin: | China | 
| MOQ: | 1pcs | 
| Price: | by case | 
| Payment Terms: | Western Union, T/T | 
| Supply Ability: | 5000kg | 
| Delivery Time: | 3-10days | 
| Packaging Details: | 25pcs cassettle wafer case in 100 grade cleaning bag | 
| Material 1: | LT Lithium tantalate (LiTaO3) crystal | 
| Material 2: | LN Lithium Niobate (LiNbO3) crystal | 
| orientaiton: | Y-42°/36°/108°/0° | 
| thickness: | 1-10mm | 
| color: | colorless or black | 
| grade: | saw /optical | 
| size: | 2-6inch | 
| Doped: | Fe,Mg | 
| Company Info. | 
| SHANGHAI FAMOUS TRADE CO.,LTD | 
| Verified Supplier | 
| View Contact Details | 
| Product List | 
Y-42° LT 4inch Lithium Tantalate LiTaO3 LiNbO3 Lithium Niobate Crystal Raw Unprocessed Ingots
1, lithium tantalate is a chemical substance, chemical formula LiTaO3. Colorless or yellowish crystal. Tripartite system, distorted perovskite type structure, point group C63vR3C. Density 7.49g/cm3. Mohs hardness 5.5 ~ 6.0. Refractive index nD=2.176. Dielectric constant 41 ~ 53. Primary electro-optic coefficient r12=7.0×10-12m/V, electromechanical coupling coefficient R15≥0.3. Is ferroelectric crystal, Curie point (665±5)℃, spontaneous polarization intensity 50×10-6C/cm2. With excellent electro-optic, voltage, electric, pyroelectric properties, pyroelectric coefficient of 2.3×10-7 C/cm2/K. Grow by lifting method. It is used as Q-switch in laser technology, pyroelectric detector in infrared technology, and filter and resonator in electronics industry.
2. Surface acoustic wave level LT crystals are used to make wafers, and IDT lines are designed above wafers to form functional devices for acoustic transmission, which are widely used in the communication industry.
Applications: Mainly used in ferroelectric, piezoelectric, electro-optical and nonlinear optics, wide band, modulator, high stability resonator and bandpass filter.
Name:
| Lithium oxido(dioxo)tantalum | 
| Tantalum, olatodioxo-, lithium salt (1:1) | 
| EINECS 234-757-5 | 
| LITHIUM TANTALUM OXIDE | 
| MFCD00016174 | 
| tantalate,lithium | 
| Lithium tantalum trioxide | 
| LITHIUM METATANTALATE | 
| tantalumlithiunoxide | 
| Crystal structure | Hexagonal | 
| Lattice constant | a = 5.154 Å c = 13.783 Å | 
| Mp | 1650 o C | 
| Density | 7.45 g / cm3 | 
| Curie temperature | 610 o C | 
| Hardness | 5.5 - 6 Mohs | 
| Thermal expansion coefficient | aa = 1.61 x 10 -6 / k ac = 4.1 x 10 -6 / k | 
| Resistivity | 1015 Wm | 
| Permittivity | es11 / e0: 39 ~ 43 es33 / e0: 42 ~ 43 et11 / e0: 51 ~ 54 et11 / e0:
43 ~ 46 | 
| Color | Colorless | 
| Through a range of | 0.4 ~ 5.0 um | 
| Index of refraction | n o = 2.176 n e = 2.180 @ 633 nm | 
| Name | Optical-grade LiTaO3 | Sound table level LiTaO3 | 
| Axial | Z cut + / - 0.2 ° | 36 ° Y cut / 42 ° Y cut / X cut | 
| Diameter | 76.2mm + / - 0.3mm/ | 76.2mm + /-0.3mm | 
| Datum plane | 22mm + / - 2mm | 22mm + /-2mm | 
| Thickness | 500um + /-5mm | 500um + /-20mm | 
| TTV | ≤ 10um | ≤ 10um | 
| Curie temperature | 605 °C + / - 0.7 °C (DTAmethod) | 605 °C + / -3 °C (DTAmethod | 
| Surface quality | Double-sided polishing | Double-sided polishing | 
| Chamfered edges | edge rounding | edge rounding | 
Standard Packaging:1000 clean rooms, 100 clean bags or single box
packaging
Diameter 50.8mm 76.2mm 100mm 150mm
Thickness 60mm 40mm
Tolerance ±0.3mm
Orientation: Y-36°,Y-42°,Y-112°
Dope: common Fe, Zn, Gd



Y-42 LT Lithium Tantalate LiTaO3 Crystal , Fe+ Doped 300um Substrate Wafer For Saw Optical Electro-Optical and Acousto-Optical material Lithium Tantalate (LiTaO3) crystal Lithium Tantalate For Scientific Research LiTaO3 Crysta Optical Lithium tantalate(LiTaO3) lens Lithium Tantalate LiTaO3 LN Single Crystal substrate and LiTaO3 wafer
| Packaging | products → single cassette or 25 pcs boxes in cleaning room | 
| Inner packing → Foam plastics anti-vibration cushion liner for package | |
| Outer packing → five layers corrugated carton paper box or as required | |
| Shipping | by air → UPS , DHL , Fedex , TNT, EMS ,SF ,et | 
|   | 
 InAs Substrate 2inch 3inch 4inch 5inch 6inch Un/S/Zn Type N/P Polished DSP/SSP
                                                                                    
                        
                        
                        
                                                            InAs Substrate 2inch 3inch 4inch 5inch 6inch Un/S/Zn Type N/P Polished DSP/SSP
                                                    
                        
                     MgO Wafer 111 100 Polished Magnesium Oxide Monocrystal Semiconductor Customized
                                                                                    
                        
                        
                        
                                                            MgO Wafer 111 100 Polished Magnesium Oxide Monocrystal Semiconductor Customized
                                                    
                        
                     2inch 4inch 6inch 8inch 12inch Si Wafer Silicon Wafer  Polishing Undoped  P Type N Type Semiconductor
                                                                                    
                        
                        
                        
                                                            2inch 4inch 6inch 8inch 12inch Si Wafer Silicon Wafer  Polishing Undoped  P Type N Type Semiconductor
                                                    
                        
                     InP wafer 2inch 3inch 4inch VGF P type N type Depant Zn S Fe Undoped Prime Grade Testing Grade
                                                                                    
                        
                        
                        
                                                            InP wafer 2inch 3inch 4inch VGF P type N type Depant Zn S Fe Undoped Prime Grade Testing Grade
                                                    
                        
                     GaP Wafer 2inch N Type  Undoped  S Doped  100 DSP SSP CZ  High Purity 5N 99.999%
                                                                                    
                        
                        
                        
                                                            GaP Wafer 2inch N Type  Undoped  S Doped  100 DSP SSP CZ  High Purity 5N 99.999%
                                                    
                        
                     Single Crystal InP Indium Phosphide Wafers 350 - 650um Thickness
                                                                                        
                                                        
                        
                        
                        
                                                            Single Crystal InP Indium Phosphide Wafers 350 - 650um Thickness
                                                    
                        
                     2 Inch 1000nm AlN Film Silicon Based Aluminum Nitride Semiconductor Substrate
                                                                                    
                        
                        
                        
                                                            2 Inch 1000nm AlN Film Silicon Based Aluminum Nitride Semiconductor Substrate
                                                    
                        
                     6 Inch Sapphire Based AlN Templates Wafer For 5G BAW Devices Sapphire wafer sapphire window
                                                                                    
                        
                        
                        
                                                            6 Inch Sapphire Based AlN Templates Wafer For 5G BAW Devices Sapphire wafer sapphire window
                                                    
                        
                     4" Sapphire Based GaN Templates Semiconductor Substrate
                                                                                    
                        
                        
                        
                                                            4" Sapphire Based GaN Templates Semiconductor Substrate
                                                    
                        
                     6" Silicon Based AlN Templates 500nm AlN Film On Silicon Substrate
                                                                                    
                        
                        
                        
                                                            6" Silicon Based AlN Templates 500nm AlN Film On Silicon Substrate