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| Categories | SiC Substrate |
|---|---|
| Brand Name: | ZMSH |
| Model Number: | SiC Epitaxial Wafer |
| Certification: | rohs |
| Place of Origin: | CHINA |
| MOQ: | 25 |
| Price: | by case |
| Payment Terms: | T/T |
| Supply Ability: | 1000pcs per month |
| Delivery Time: | 5-8weeks |
| Packaging Details: | Package in 100-grade cleaning room |
| Crystal Structure: | 4H-SiC single crystal |
| Size: | 2inch 3inch 4inch 6inch |
| Diameter/Thickness: | Customized |
| Resistivity: | 0.01–100 Ω·cm |
| Surface Roughness: | <0.2 nm (Ra) |
| TTV: | <5 µm |
| Company Info. |
| SHANGHAI FAMOUS TRADE CO.,LTD |
| Verified Supplier |
| View Contact Details |
| Product List |
2inch 3inch 4inch 6inch SiC Epitaxial Wafers 4H-N Production Grade
Company Profile:
As a leading SiC (Silicon Carbide) epitaxial wafer supplier, ZMSH specialize in the production, processing, and global distribution of high-quality 4H-N-type conductive and MOS-grade epitaxial wafers in 2-inch (50.8mm), 3-inch (76.2mm), 4-inch (100mm), and 6-inch (150mm) diameters, with capabilities extending up to 12-inch (300mm) for future industry demands.
Our product portfolio includes:
· 4H-N-type & 6H-N-type conductive SiC substrates (for power devices)
· High-Purity Semi-Insulating (HPSI) & SEMI-standard wafers (for RF applications)
· 4H/6H-P-type & 3C-N-type SiC wafers (for specialized semiconductor needs)
· Custom doping, thickness, and surface finishes (CMP, epi-ready, etc.)
With advanced CVD epitaxial growth technology, strict quality control (ISO 9001), and full in-house processing capabilities, we serve automotive, power electronics, 5G, and aerospace industries worldwide.
| Parameter | Specifications |
| Crystal Structure | 4H-SiC (N-type) |
| Diameter | 2" / 3" / 4" / 6" |
| Epi Thickness | 5-50 µm (custom) |
| Doping Concentration | 1e15~1e19 cm⁻³ |
| Resistivity | 0.01–100 Ω·cm |
| Surface Roughness | <0.2 nm (Ra) |
| Dislocation Density | <1×10³ cm⁻² |
| TTV (Total Thickness Variation) | <5 µm |
| Warpage | <30 µm |
(All specs customizable – contact us for project-specific requirements.)
1. Superior Electrical Performance
2. Excellent Thermal Properties
3. High-Quality Epitaxial Layer
4. Multiple Wafer Grades Available
1. Electric Vehicles (EVs) & Fast Charging
2. Renewable Energy & Industrial Power
3. 5G & RF Communications
4. Aerospace & Defense
5. Consumer & Industrial Electronics
1. Full-Cycle Manufacturing & Customization
· SiC substrate production (2" to 12")
· Epitaxial growth (CVD) with controlled doping (N/P-type)
· Wafer processing (lapping, polishing, laser marking, dicing)
2. Testing & Certification
· XRD (crystallinity), AFM (surface roughness), Hall effect (carrier mobility)
· Defect inspection (etch pit density, micropipes <1/cm²)
3. Global Supply Chain Support
· Fast prototyping & bulk order fulfillment
· Technical consulting for SiC device design
Why Choose Us?
✔ Vertical integration (substrate → epitaxy → finished wafer)
✔ High yield & competitive pricing
✔ R&D support for next-gen SiC devices
✔ Fast lead times & global logistics
(For datasheets, samples, or quotes – reach out today!)
1. Q: What are the key differences between 2-inch, 4-inch and 6-inch SiC epitaxial wafers?
A: The main differences are in production scalability (6" enables higher volume) and cost-per-chip (larger wafers reduce device costs by ~30%).
2. Q: Why choose 4H-SiC over silicon for power devices?
A: 4H-SiC offers 10x higher breakdown voltage and 3x better thermal conductivity than silicon, enabling smaller, more efficient power systems.
Tags: #2inch 3inch 4inch 6inch, #SiC Epitaxial Wafers, #Silicon Carbide#4H-N, #Conductive, #Production Grade, #MOS Grade
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