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| Categories | Field Effect Transistor |
|---|---|
| Brand Name: | JC |
| Model Number: | OSPF18N50C |
| Certification: | RoHS |
| Place of Origin: | Jiangxi, China |
| MOQ: | Negotiable |
| Price: | Negotiated |
| Payment Terms: | Telegraphic Transfer in Advance (Advance TT, T/T) |
| Supply Ability: | 15,000,000PCS Per Day |
| Delivery Time: | 1 - 2 Weeks |
| Packaging Details: | Boxed |
| Name: | Mosfet Power Transistor |
| Drain-Source Voltage: | 500V |
| Gate-Source Voltage-Continuous: | ±30V |
| Drain Current-Continuous（Note 2）: | 18A |
| Drain Current-Single Plused（Note 1）: | 56A |
| Power Dissipation （Note 2): | 52W |
Original Mosfet Power Transistor / Plastic P Channel Transistor
Mosfet Power Transistor Features
Low gate charge
Low Rdson(typical 5.5mΩ)
Fast switching
100% avalanche tested
Improved dv/dt capability
RoHS product
Mosfet Power Transistor Applications
Absolute Maximum Ratings (Tc=25°C)
| Symbol | Parameters | Ratings | Unit |
| VDSS | Drain-Source Voltage | 500 | V |
| VGS | Gate-Source Voltage-Continuous | ±30 | V |
| ID | Drain Current-Continuous(Note 2) | 18 | A |
| IDM | Drain Current-Single Plused(Note 1) | 56 | A |
| PD | Power Dissipation (Note 2) | 52 | W |
| Tj | Max.Operating junction temperature | 150 | ℃ |
Electrical characteristics (Tc=25°C unless otherwise noted)
| Symbol | Parameters | Min | Typ | Max | Units | Conditions | |
| Static Characteristics | |||||||
| BVDSS | Drain-Source Breakdown | 500 | -- | -- | V | ID=250µA,VGS=0V,TJ=25°C | |
| VGS(th) | Gate Threshold Voltage | 3.0 | -- | 5.0 | V | VDS=VGS,ID=250μA | |
| RDS(on) | Drain-Source On-Resistance | -- | 0.4 | 0.7 | Ω | VGS=10V,ID=6.5A | |
| IGSS | Gate-Body Leakage Current | -- | -- | ±100 | nA | VGS=±30V,VDS=0 | |
| IDSS | Zero Gate Voltage Drain Current | -- | -- | 1 | μA | VDS=500V,VGS=0 | |
| Switching Characteristics | |||||||
| Td(on) | Turn-On Delay Time | -- | 25 | 60 | ns | VDS=250V,ID=13A, | |
| Tr | Rise Time | -- | 100 | 210 | ns | ||
| Td(off) | Turn-Off Delay Time | -- | 130 | 270 | ns | ||
| Tf | Fall Time | -- | 100 | 210 | ns | ||
| Qg | Total Gate Charge | -- | 43 | 56 | nC | VDS=400,VGS=10V, | |
| Qgs | Gate-Source Charge | -- | 7.5 | -- | nC | ||
| Qgd | Gate-Drain Charge | -- | 18.5 | -- | nC | ||
| Dynamic Characteristics | |||||||
| Ciss | Input Capacitance | -- | 1580 | 2055 | pF | VDS=25V,VGS=0, | |
| Coss | Output Capacitance | -- | 180 | 235 | pF | ||
| Crss | Reverse Transfer Capacitance | -- | 20 | 25 | pF | ||
| IS | Continuous Drain-Source Diode | -- | -- | 13 | A | ||
| VSD | Diode Forward On-Voltage | -- | -- | 1.4 | V | IS=13A,VGS=0 | |
| Rth(j-c) | Thermal Resistance, Junction to | -- | -- | 2.58 | ℃/W | ||
Our Advantage:
1. Electronic component specialist and professional.
2. Strong R & D team, experienced research staffs
3. Strong and consistent quality control, same standard as of RoHS.
4. Elite sales team with more than 5 years international trading
experience individually.
5. Strong technical support to help customers choose the most
appropriate products.
6. Be proud of the product and the competitive price.
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