4 inch sic epitaxial wafer

Brand Name:ZMSH

Model Number:4 inch

Place of Origin:China

... capability, 8” SiC epitaxial wafers offer unparalleled opportunities for scaling up power device production while driving down the cost per device. As demand for electric vehicles, renewable energy, and ...

Brand Name:ZMSH

Model Number:SiC Epitaxial Wafer

Place of Origin:CHINA

...SiC epitaxial wafers - overview 2inch 3inch 4inch 6inch SiC Epitaxial Wafers 4H-N Production Grade Company Profile: As a leading SiC (Silicon Carbide) epitaxial wafer supplier, ZMSH specialize in the production, processing, and global distribution of high-quality 4H-N-type conductive and MOS-grade epitaxial wafers in 2-inch (50.8mm), 3-inch (76.2mm), 4-inch (100mm), and 6-inch...

Country/Region:china

SiC Substrate Wafer Manufacturer 4 inch P Grade SiC Wafer Factory Homray Material Technology offers silicon carbide SiC n-type and p-tpye epitaxial wafer. SiC epi wafer is mainly used for Schottky diodes, metal-oxiHomray Material Technology offersthe best price on the market for high quality SiC wafers and silicon carbide epitaxial wafers. The major products are 2 inch, 3 inch, 4 inch 6 inch...

Brand Name:Ruideer

Model Number:Customizable

Place of Origin:China

... of the semiconductor epitaxial susceptor and etching ring. Epitaxial base, a high-purity graphite disk, with a circular groove on it to fix the wafer substrate.After placing them in the furnace, a layer of crystal film will grow on the surface of the

Brand Name:PAM-XIAMEN

Place of Origin:China

...SiC Crystal Wafer With Low Micropipe Density,2”Size PAM-XIAMEN provides high quality single crystal SiC (Silicon Carbide) wafer for electronic and optoelectronic industry. SiC wafer is a next generation semiconductor materialwith unique electrical properties and excellent thermal properties for high temperature and high power device application. SiC wafer can be supplied in diameter 2~6 inch, both 4H and 6H SiC...

Brand Name:ZG

Model Number:MS

Place of Origin:CHINA

...wafer ( Gallium Antimonide ) We provides GaSb wafer ( Gallium Antimonide ) to optoelectronics industry in diameter up to 2 inch . GaSb crystal is a compound formed by 6N pure Ga and Sb element and is grown by Liquid Encapsulated Czochralski ( LEC ) method with EPD < 1000 cm -3 . GaSb crystal has high uniformity of electrical parameters and low defect density , suitable for MBE or MOCVD epitaxial...

Brand Name:Crystro

Model Number:CR251027-01

Place of Origin:China

... as substituting ions, which are used as the substrates for the growth of bismuth-substituted iron garnet epitaxial films, which is good material for YIG,and BIG flim Our Company: Crystro has perfect automatic production machine, the current products are

Brand Name:Silian

Model Number:Customized

Place of Origin:Chongqing，China

6-inch sapphire substrate with good light transmittance Product Description The chemical composition of sapphire crystal is alumina, with the crystal structure hexagonal lattice. Sapphire is a commonly used substrate material for gallium nitride (GaN) ...

Brand Name:CAEC

Place of Origin:Henan, China

...epitaxial wafers. They can be used steadily on the Japanese, Korean and Taiwanese grinders with high performance. Workpiece: sapphire epitaxial wafer, SiC substrate epitaxial wafer, Si substrate epitaxial wafer. Material of workpiece: Synthetic sapphire, SiC...